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    014 IR MOSFET TRANSISTOR Search Results

    014 IR MOSFET TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    014 IR MOSFET TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFM054

    Abstract: No abstract text available
    Text: PD - 90709B POWER MOSFET THRU-HOLE TO-254AA IRFM054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM054 RDS(on) 0.027 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


    Original     		PDF 90709B O-254AA) IRFM054 O-254AA. MIL-PRF-19500 IRFM054

    IRFM460

    Abstract: No abstract text available
    Text: PD - 90727B POWER MOSFET THRU-HOLE TO-254AA IRFM460 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM460 0.27 Ω 19A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


    Original     		PDF 90727B O-254AA) IRFM460 O-254AA. MIL-PRF-19500 IRFM460

    IRFM044

    Abstract: No abstract text available
    Text: PD - 90708B POWER MOSFET THRU-HOLE TO-254AA IRFM044 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) IRFM044 0.04 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


    Original     		PDF 90708B O-254AA) IRFM044 O-254AA. MIL-PRF-19500 IRFM044

    Untitled

    Abstract: No abstract text available
    Text: PD - 90710B POWER MOSFET THRU-HOLE TO-254AA IRFMG40 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG40 R DS(on) ID 3.5Ω 3.9A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


    Original     		PDF 90710B O-254AA) IRFMG40 O-254AA. MIL-PRF-19500

    Untitled

    Abstract: No abstract text available
    Text: PD - 90708B POWER MOSFET THRU-HOLE TO-254AA IRFM044 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) IRFM044 0.04 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


    Original     		PDF 90708B O-254AA) IRFM044 O-254AA. MIL-PRF-19500

    Untitled

    Abstract: No abstract text available
    Text: PD - 90727B POWER MOSFET THRU-HOLE TO-254AA IRFM460 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM460 0.27 Ω 19A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


    Original     		PDF 90727B O-254AA) IRFM460 O-254AA. MIL-PRF-19500

    irf 540 mosfet

    Abstract: IRFM064
    Text: PD - 90875A POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM064 RDS(on) 0.017 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


    Original     		PDF 0875A O-254AA) IRFM064 O-254AA. MIL-PRF-19500 irf 540 mosfet IRFM064

    IRFMG40

    Abstract: No abstract text available
    Text: PD - 90710B POWER MOSFET THRU-HOLE TO-254AA IRFMG40 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG40 R DS(on) ID 3.5Ω 3.9A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


    Original     		PDF 90710B O-254AA) IRFMG40 O-254AA. MIL-PRF-19500 IRFMG40

    IRFM360

    Abstract: No abstract text available
    Text: PD - 90712B POWER MOSFET THRU-HOLE TO-254AA IRFM360 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM360 0.20 Ω 23A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


    Original     		PDF 90712B O-254AA) IRFM360 O-254AA. MIL-PRF-19500 IRFM360

    Untitled

    Abstract: No abstract text available
    Text: PD - 90709B POWER MOSFET THRU-HOLE TO-254AA IRFM054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) 0.027 Ω IRFM054 ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


    Original     		PDF 90709B O-254AA) IRFM054 O-254AA. MIL-PRF-19500

    IRF*260

    Abstract: IRFM260 4.5V TO 100V INPUT REGULATOR
    Text: PD - 91388B POWER MOSFET THRU-HOLE TO-254AA IRFM260 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM260 0.060 Ω 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


    Original     		PDF 91388B O-254AA) IRFM260 O-254AA. MIL-PRF-19500 IRF*260 IRFM260 4.5V TO 100V INPUT REGULATOR

    Untitled

    Abstract: No abstract text available
    Text: PD-90711C POWER MOSFET THRU-HOLE TO-254AA IRFMG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG50 RDS(on) ID 2.0Ω 5.6A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF PD-90711C O-254AA) IRFMG50 O-254AA. MIL-PRF-19500

    mosfet 10a 800v

    Abstract: MOSFET 800V 10A irf 44 n N CHANNEL MOSFET 10A 1000V IRFMG50
    Text: PD-90711C POWER MOSFET THRU-HOLE TO-254AA IRFMG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG50 RDS(on) ID 2.0Ω 5.6A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF PD-90711C O-254AA) IRFMG50 O-254AA. MIL-PRF-19500 mosfet 10a 800v MOSFET 800V 10A irf 44 n N CHANNEL MOSFET 10A 1000V IRFMG50

    irf 540 mosfet

    Abstract: ls 7400 PD908 014 IR MOSFET Transistor IRFM064
    Text: PD-90875C POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM064 RDS(on) 0.017 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF PD-90875C O-254AA) IRFM064 O-254AA. MIL-PRF-19500 irf 540 mosfet ls 7400 PD908 014 IR MOSFET Transistor IRFM064

    Untitled

    Abstract: No abstract text available
    Text: PD-90712E POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM350 JANTX2N7227 JANTXV2N7227 REF:MIL-PRF-19500/592 400V, N-CHANNEL Part Number RDS(on) ID IRFM350 0.315Ω 14A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF PD-90712E O-254AA) IRFM350 JANTX2N7227 JANTXV2N7227 MIL-PRF-19500/592 O-254AA. MIL-PRF-19500

    Untitled

    Abstract: No abstract text available
    Text: PD-90875C POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) 0.017 Ω IRFM064 ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF PD-90875C O-254AA) IRFM064 O-254AA. MIL-PRF-19500

    IRGMC40F

    Abstract: bipolar transistor td tr ts tf
    Text: PD -90716B IRGMC40F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz Switching-loss rating includes all "tail" losses


    Original     		PDF -90716B IRGMC40F O-254AA. MIL-PRF-19500 IRGMC40F bipolar transistor td tr ts tf

    bipolar transistor td tr ts tf

    Abstract: IRF 260 N IRGMC30F
    Text: PD -90714B IRGMC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses


    Original     		PDF -90714B IRGMC30F O-254AA. MIL-PRF-19500 bipolar transistor td tr ts tf IRF 260 N IRGMC30F

    IRF 260 N

    Abstract: MOSFET 1000v 30a IRGMC50F
    Text: PD -90718B IRGMC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz Switching-loss rating includes all "tail" losses


    Original     		PDF -90718B IRGMC50F O-254AA. MIL-PRF-19500 IRF 260 N MOSFET 1000v 30a IRGMC50F

    IRGMC50U

    Abstract: No abstract text available
    Text: PD -90719B IRGMC50U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation > 10 kHz Switching-loss rating includes all "tail" losses


    Original     		PDF -90719B IRGMC50U O-254AA. MIL-PRF-19500 IRGMC50U

    IRGMC30U

    Abstract: 90715
    Text: PD -90715B IRGMC30U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation > 10 kHz Switching-loss rating includes all "tail" losses


    Original     		PDF -90715B IRGMC30U O-254AA. MIL-PRF-19500 IRGMC30U 90715

    Untitled

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD-9.1551 IQR Rectifier HEXFET POWER MOSFET IRFN350 N - CHA N N E L Product Summary 400 Volt, 0.315fi HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi­ cient geometry achieves very low on-state resistancecom­


    OCR Scan     		PDF IRFN350 315fi

    Untitled

    Abstract: No abstract text available
    Text: In ÎG r n Q t i O n Q I Provisional Data Sheet No. PD-9.1550 I R Rectifier HEXFET POWER MOSFET IRFN340 N- CHA N N E L Product Summary 400 Volt, 0.55ÎÎ HEXFET H EXFET technology is the key to International Rectifier’s advanced line of power M O S F E T transistors.The effi­


    OCR Scan     		PDF IRFN340

    Untitled

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD-9.1551 International IOR Rectifier HEXFET POWER MOSFET IRFN350 N -C H A N N E L 400 Volt, 0.3150 HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power M O S F E T transistors. The effi­ cient geometry achieves very low on-state resistancecombined with high transconductance.


    OCR Scan     		PDF