JANTXV2N7227 Search Results

MIL-PRF-19500/592

Abstract: IRFN350 JANTX2N7227U JANTXV2N7227U 400V Single N-Channel HEXFET Power MOSFET
Contextual Info: PD - 91551C POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN350 JANTX2N7227U JANTXV2N7227U REF:MIL-PRF-19500/592 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN350 0.315 Ω 14A HEXFET® MOSFET technology is the key to International

Contextual Info: SCF2N7227T1 JANTX2N7227 JANTXV2N7227 POWER MOSFET FOR RUGGED ENVIRONMENTS REF: MIL-PRF-19500/592 • N-Channel  400 Volt  < 0.315 Ohms  14 Amp TO-254AA DESCRIPTION SEMICOA’s MOSFET technology is designed for rugged environments providing excellent long term reliability. SEMICOA’s long heritage providing military grade technology and packaging allows these devices to be

Contextual Info: Data Sheet No. PD-9.491C INTERNATIONAL RECTIFIER I R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM350 2N 7227 JANTX2N7227 JANTXV2N7227 N-CHANNEL REF: MIL-S-1SSOO/592] 400 Volt, 0.315 Ohm HEXFET Product Summary The HEXFET® technology is the key to International

JANTXV2N7224

Abstract: 2N7224 JANTXV 2N7228 JANTX mosfet data sheet JANTX2N7224 JANTX2N7225 2N7228 JANTX mosfet JANTX2N7228 2N7224 2N7225 2N7227
Contextual Info: 2N7224, JANTX2N7224, JANTXV2N7224 2N7225, JANTX2N7225, JANTXV2N7225 2N7227, JANTX2N7227, JANTXV2N7227 2N7228, JANTX2N7228, JANTXV2N7228 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/592 100V Thru 500V, Up to 34A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated

Contextual Info: PD-90712E POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM350 JANTX2N7227 JANTXV2N7227 REF:MIL-PRF-19500/592 400V, N-CHANNEL Part Number RDS(on) ID IRFM350 0.315Ω 14A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRFM350

Abstract: JANTX2N7227 JANTXV2N7227
Contextual Info: PD - 90491D POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM350 JANTX2N7227 JANTXV2N7227 REF:MIL-PRF-19500/592 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFM350 0.315 Ω 14A HEXFET® MOSFET technology is the key to International

2N7227U

Abstract: IRFN350 JANTX2N7227U JANTXV2N7227U
Contextual Info: PD-91551B IRFN350 JANTX2N7227U HEXFET POWER MOSFET JANTXV2N7227U [REF:MIL-PRF-19500/592] N - CHANNEL Ω MOSFET 400 Volt, 0.315Ω Product Summary Part Number IRFN350 ® HEXFET power MOSFET technology is the key to International Rectifier’s advanced line of power

Contextual Info: PD-91551D POWER MOSFET SURFACE MOUNT SMD-1 IRFN350 JANTX2N7227U JANTXV2N7227U REF:MIL-PRF-19500/592 400V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN350 0.315 Ω 14A HEXFET® MOSFET technology is the key to International

Diode T3D 56

Abstract: T3D DIODE T3D 65 diode DD 127 D TRANSISTOR 2N7227 T3D 53 diode tx 2n7227 334 3150 mosfet mps 0545 T3D 83 DIODE
Contextual Info: Data Sheet No. PD-9.491C INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR :n N-CHANNEL IRFM35Q 2N 7227 JANTX2N7227 JANTXV2N7227 [REF: MIL-S-19500/59S] Product Summary 400 Volt, 0.315 Ohm HEXFET T h e H E X F E T ® technology is th e key to International

MOSFET DRIVER circuits

Contextual Info: PD-90712E POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM350 JANTX2N7227 JANTXV2N7227 REF:MIL-PRF-19500/592 400V, N-CHANNEL Part Number RDS(on) ID IRFM350 0.315Ω 14A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

MIL-PRF-19500/592

Abstract: MOSFET 150 N IRF IRFN350 JANTX2N7227U JANTXV2N7227U 400V Single N-Channel HEXFET Power MOSFET
Contextual Info: PD-91551D POWER MOSFET SURFACE MOUNT SMD-1 IRFN350 JANTX2N7227U JANTXV2N7227U REF:MIL-PRF-19500/592 400V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN350 0.315 Ω 14A HEXFET® MOSFET technology is the key to International

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

IRFM9034

Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Contextual Info: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number

irfm9034

Contextual Info: 1 I n t e r n a t io n a l R e c t if ie r Government and Space Products Pvt Numb« 2 (3) bvdss (Vote) RDS(on) (Ohms) ID« Tc*2T (Amps) 10« TC=100“ (Amps) Pd O Tc«25° (Watts) Fax-onOamand Number Case Styl«, (Cas* (Min») (1) HEXFET Power MOSFETs Hermetic Package, N- and P-Channel

MO-D36AB

Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Contextual Info: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for

Contextual Info: k> Part Number b vdss RDS on (V) (Q T r=25°C (A) Tf=100°C MA) Pd @ Tr = 25°C m Fax on Demand Number Case Outline Key Hermetic Packages HEXFET Power MOSFETs SMD-1 JA N TXV2N 72 !8U 100 .07? 28 20 125 JANTXV2N7219U 904 Ki» 1121 200 .18 18 11 125 90555

Contextual Info: International Government and Space HEXFET Power MOSFETs XORlRe cB fie r Hermetic Package N & P Channel Case •d @ TP = 25°C lp @ Tq = 100°C R thJC Max. Pd @ TC = 25°C Outline A (K/W) (W) Number (1) 0.04 (*> 35 28 1.0 125 0.027 35 35 0.83 150 60 0.017

Contextual Info: _ I n t e r n a t i o n a l R e c t if ie r Government and Space Products Part Number P bvdss Vohj) RDS(on) (Ohmi) 10« To*25* ID« Tc*100° (Amp*) (Amps) Total Dos* Rating Radi (Si) PD« To2P (Watts) Fax-onDrniand Number

Contextual Info: " F f rN A T if M A I » F C International I Q R Rectifier Government and Space Products h *D ByoSS V Part Number Tf=25°C (A) ^DS(on) (Q ^ T ,= 100°C C (A) @ T f= 2 5 ° C (W) Fax on Demand Number Case Outline Key Hermetic Packages HEXFET Power MOSFETs

jantxv2n7224

Abstract: 2N7225
Contextual Info: Government and Space Designer's Manual Table of Contents Section & Page No. HEXFET IRF S E R IE S .1-3