017T Search Results
017T Price and Stock
Vishay Semiconductors SFH615A-4X017TOPTOISOLTR 5.3KV 1CH TRANS 4-SMD |
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SFH615A-4X017T | Digi-Reel | 1,113 | 1 |
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Vishay Semiconductors VO617A-7X017TOPTOISOLTR 5.3KV 1CH TRANS 4-SMD |
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VO617A-7X017T | Cut Tape | 1,098 | 1 |
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Vishay Semiconductors IL4218-X017TOPTOISOLTR 5.3KV TRIAC 1CH 6-SMD |
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IL4218-X017T | Cut Tape | 1,009 | 1 |
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Vishay Semiconductors VO610A-4X017TOPTOISOLATOR 5KV 1CH TRANS 4-SMD |
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VO610A-4X017T | Digi-Reel | 880 | 1 |
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Vishay Semiconductors VO2223B-X017TOPTOIS 4.47KV PWR TRIAC 1CH 8SMD |
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VO2223B-X017T | Digi-Reel | 793 | 1 |
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017T Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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017t
Abstract: 4536-14-1
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400ji" QQ-B-626 MIL-M-14F 017t 4536-14-1 | |
SLD-12-6034-05T
Abstract: SLO-12-000-TB SLD-15-3030-15T SLS-24-072T SLS-05-030-1T SLS-24-012T 12-61818-12T1 SLS-12-068T 12 V SLS-24-048T
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SLS-05-030-1T SLS-05-060-1T SLS-05-090-1T SLS-05-120-1T SLS-12-017T1 SLS-12-034T SLS-12-051T SLS-12-068T SLS-15-045T SLS-15-060T SLD-12-6034-05T SLO-12-000-TB SLD-15-3030-15T SLS-24-072T SLS-05-030-1T SLS-24-012T 12-61818-12T1 SLS-12-068T 12 V SLS-24-048T | |
TMS1070
Abstract: TMS 1070 TMS1000 IC TMS1000
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UU2942 017TPUT OOO00O0© TMS1070 TMS 1070 TMS1000 IC TMS1000 | |
Contextual Info: NUMBER:RD-SDRJLBG-017TC1 DATE :2006/09/25 -R REV:A1 Single 10/100/1000 BASE-TX Filtered Connector Module MODEL NO. : RJLBG-017TC1 Features: ◎ RoHS Compliant ◎ Fully shielded magnetics protect data from internally generated digital noise ◎ Reduces the overall length of the signal path for improved common mode performance |
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RD-SDRJLBG-017TC1 RJLBG-017TC1 IEEE802 1000BASE-TX 565nm 635nm 585nm RJ-45 | |
Contextual Info: 8x930HjrUNIVERSAL SERIAL BUS PERIPHERAL CONTROLLER 1.0 ABOUT THIS DOCUMENT 1.2 This data sheet contains advance information about Intel’s 8*930Hjr Universal Serial Bus hub peripheral controller, based on the MCS 251 peripheral controller, which includes a functional overview, |
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8x930HjrUNIVERSAL 930Hjr 8x930Ax, 8x930Hx 8S30H* 930HF/HG X930H 8a930Hjt 8x930Hxâ | |
Contextual Info: TS270—A893 March 1989 6 4 K - B I T 1 6 , 3 8 4 x 4 B i - C M O S H I G H S P E E D S T A T I C RANDOM ACCESS MEMORY WITH AUTOMATIC POWER DOWN The Fujitsu MB82B75 is a 16,384-words by 4-bits static random access memory fabricated with a CMOS silicon gate process. To make power dissipation lower and high |
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TS270â MB82B75 384-words 300mil 24P-M03 C24062S-1C MB82B74-15 MB82B74-20 | |
Contextual Info: I I I I I I I I I I I I I I I I I I ACT-PS512K8 High Speed 4 Megabit Plastic Monolithic SRAM Plastic Path Features • Low Power Monolithic CMOS 512K x 8 SRAM ■ Operating Temperature Range • Full Military -55°C to +125°C • Industrial (-40°C to +85°C) |
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ACT-PS512K8 SCD3764 | |
613 GB 123 CT
Abstract: MIPS Translation Lookaside Buffer TLB R3000 MIPS r3000 tag l9 225 400 tag d3 620 400 tag c3 625 800 burndy q5 tag R3000 Performance Semiconductor PR300
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R3000 32-Bit, PR3000 PR3000â MIL-STD-883C, TECHDOC15Q7 613 GB 123 CT MIPS Translation Lookaside Buffer TLB R3000 MIPS r3000 tag l9 225 400 tag d3 620 400 tag c3 625 800 burndy q5 tag R3000 Performance Semiconductor PR300 | |
Contextual Info: r a E L D M O iM r a Y PaceMips R3000 * 32-Bit, 25 MHz RISC GPU with Integrated Memory * Management Unit - Means Quality, Service and Speed 'SEMICONDUCTOR CORPORATION C1989 Performance Semiconductor Corporation jA TABLE OF CONTENTS Features and Description .6-5 |
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R3000 32-Bit, C1989 PR3000 CA95112 MIL-STD-883C, TECHDOC15Q7 | |
Contextual Info: MITSUBISHI <Dig./Ana. INTERFACE M 51995P.FP SWITCHING REGULATOR CONTROL DESCRIPTION M51995 is the primary switching regulator controller which is especially designed to get the regulated DC voltage from AC power supply. This 1C can directly drive the MOS-FET w ith fast rise and |
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51995P M51995 G17T1C | |
28F004S3
Abstract: 28F008S3 28F008SA 28F008SA-L 28F008SC 28F016S3 OFDM Block
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28F004S3, 28F008S3, 28F016S3 40-Lead 44-Lead 64-Kbyte 16-Mbit 28F004S3 28F008S3 28F008SA 28F008SA-L 28F008SC OFDM Block | |
apic - s03Contextual Info: PENTIUM PROCESSOR WITH MMX TECHNOLOGY Maximum Operating Frequency iCOMP® Index 2.0 Rating 166 MHz 200 MHz 233 MHz 160 182 203 NOTE: Contact Intel Corporation for more information about iCOMP® Index 2.Q ratings. • Support for MMX™ Technology ■ Enhanced CMOS Silicon Technology |
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32-Bit 64-Bit apic - s03 | |
Contextual Info: PRODUCT PREVIEW in te l BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 28F004S3, 28F008S3, 28F016S3 Includes Commercialand Extended Temperature Specifications SmartVoltage Technology — Smart 3 Flash: 2.7V Read-Only or 3.3V Vcc and 3.3V or 12V VPP |
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28F004S3, 28F008S3, 28F016S3 40-Lead 44-Lead 64-Kbyte M627Byte-Wide 16-Mbit | |
Z86E3012PSC
Abstract: EPROM 2764a wv passat Z86E30 4FV diode IRC30
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17S7S Z86E30 28-pin 8-b17L T-49-19-07 0017b21 T-49-Ã Z86E3012PSC EPROM 2764a wv passat Z86E30 4FV diode IRC30 | |
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Contextual Info: THIN FILM RESISTOR NETWORK SOM MEDIUM BODY GULL WING/ 14, 16, 18, AND 20 PIN • Increased lead density ■ Custom circuits available per factory « Model 4800T B Resistor Networks Electrical C haracteristics Resistance Range. 10 to 100K ohms Resistance Tolerance |
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4800T 100ppm/Â 50ppm/Â 25ppm/Â | |
FCE17
Abstract: TDA8751T A1GND tda8051 qpsk receiver
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TDA8051 TDA8051 12-bit FCE17 TDA8751T A1GND qpsk receiver | |
Contextual Info: TOSHIBA TC55V2325FF-7 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 32-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V2325FF is a 2,097,152-bit synchronous pipelined burst static random access memory SRAM organized as 65,536 words by 32 bits. It is designed for use as a secondary cache to support microprocessor |
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TC55V2325FF-7 536-WORD 32-BIT TC55V2325FF 152-bit LQFP100-P-1420-0 | |
Contextual Info: TO SH IBA TC55V4316FF-167,-150,-133 TOSHI BA MOS DI GI TAL I NTEGRATED CI RCUI T SI LI CON GATE CMOS 131,072-WORD BY 32-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V4316FF is a 4,194,304-bit synchronous pipelined burst static random access memory SRAM |
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TC55V4316FF-167 072-WORD 32-BIT TC55V4316FF 304-bit LQFP100-P-1420-0 | |
B33A10
Abstract: R6095 Q031 THOMSON-CSF PRODUCTS A24C11
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TSPC860 TSPC860 TS68EN360 32-bit TS68EN360 46-91401ORSA B33A10 R6095 Q031 THOMSON-CSF PRODUCTS A24C11 | |
Contextual Info: FLASH MEMORY CMOS 4M 5 1 2 K x 8 BIT MBM29F040A - 70/-90/-12 • DISTINCTIVE CHARACTERISTICS • Single 5.0 V read, write and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs |
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MBM29F040A 32-pin C32021S-2M FPT-32P-M24) F32035S-2C-1 D02D577 | |
Contextual Info: irrigl, PRELIMINARY 2-MBIT 128K X 16, 256K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F200CV-T/B, 28F002BV-T/B Intel SmartVoltage Technology — 5V or 12V Program/Erase — 3.3V or 5V Read Operation — Increased Programming Throughput |
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28F200BV-T/B, 28F200CV-T/B, 28F002BV-T/B 28F002/400BX- 28F002/400BL-T/B AP-604 AP-617 AB-57 | |
82489dx
Abstract: AP-388 82489DX Corollary
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X100-X3FF X500-X7FF X900-XBFF XD00-XFFF 2L175 82489dx AP-388 82489DX Corollary | |
Contextual Info: 27 K a trin a Road Chelm sford, M A 01824 Tel: 978 256-3321 Fax: (978)250-1046 W eb: www.stcsemi.com A PO W ERHOUSE hFE B vceo TO-3 Â à 41 i VcE(SAT) M ax @ I c/I b (volts) M in-M ax (a m p s/vo lts) (vo lts) (a m p s) 2N6058 80 12 750- 18000 6/3 2.0 6 / .024 |
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2N6058 2N6059 2N6350 2N6351 14-PtN | |
Contextual Info: SAMSUNG E L E C T R O N I C S I NC h7E T> m 7^4142 00171332 35Ô M S I I G K PRELIMINARY KM616V513 CMOS SRAM 32,768 W O R D x 16 B it High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time: 17, 20, 25ns (Max.) • Low Power Dissipation |
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KM616V513 KM616V513J-17 130mA KM616V513J-20 120mA KM616V513J-25: 110mA l/09-l/0 KM616V513J: 40-Pin |