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Micro Commercial Components MCU01N60A-TP N-CHANNEL MOSFET, DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MCU01N60A-TP	Digi-Reel	4,875		1	1 $1.02 10 $0.639 100 $1.02 1000 $0.29139 10000 $0.29139	Buy Now
	MCU01N60A-TP	Cut Tape	4,875		1	1 $1.02 10 $0.639 100 $1.02 1000 $0.29139 10000 $0.29139	Buy Now
	MCU01N60A-TP	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.25808	Buy Now
Mouser Electronics	MCU01N60A-TP		2,458			1 $0.63 10 $0.587 100 $0.396 1000 $0.279 10000 $0.207	Buy Now
Infineon Technologies AG IKN01N60RC2ATMA1 IGBT 600V 2.2A SOT223-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IKN01N60RC2ATMA1	Cut Tape	2,984		1	1 $0.92 10 $0.576 100 $0.92 1000 $0.25964 10000 $0.25964	Buy Now
	IKN01N60RC2ATMA1	Digi-Reel	2,984		1	1 $0.92 10 $0.576 100 $0.92 1000 $0.25964 10000 $0.25964	Buy Now
Avnet Americas	IKN01N60RC2ATMA1	Reel		19 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	IKN01N60RC2ATMA1		2,744			1 $0.82 10 $0.559 100 $0.375 1000 $0.253 10000 $0.179	Buy Now
Newark	IKN01N60RC2ATMA1	Cut Tape	232		1	1 $0.287 10 $0.287 100 $0.287 1000 $0.287 10000 $0.287	Buy Now
Rochester Electronics	IKN01N60RC2ATMA1		107,000		1	1 $0.1997 10 $0.1997 100 $0.1877 1000 $0.1697 10000 $0.1697	Buy Now

Chip1Stop	IKN01N60RC2ATMA1	Cut Tape	2,945			1 - 10 $0.18 100 $0.179 1000 $0.178 10000 $0.177	Buy Now
EBV Elektronik	IKN01N60RC2ATMA1			20 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC SPS01N60C3 MOSFET N-CH 650V 800MA TO251-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPS01N60C3	Tube			944	1 - 10 - 100 - 1000 $0.32 10000 $0.32	Buy Now
Infineon Technologies AG SPS01N60C3 MOSFET N-CH 650V 800MA TO251-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPS01N60C3	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	SPS01N60C3		43,500		1	1 $0.3056 10 $0.3056 100 $0.2873 1000 $0.2598 10000 $0.2598	Buy Now
onsemi NDD01N60T4G MOSFET N-CH 600V 1.5A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NDD01N60T4G	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	NDD01N60T4G		100		9	1 - 10 $0.5625 100 $0.3656 1000 $0.3656 10000 $0.3656	Buy Now

Find more 01N60 price and stock on Findchips.com

01N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
01N60S5 Abstract: 01N60 SPD01N60S5 SPU01N60S5 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193 Text: 01N60S5 01N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on	Original	PDF	SPU01N60S5 SPD01N60S5 P-TO252 P-TO251-3-1 SPUx7N60S5/SPDx7N60S5 Q67040-S4193 01N60S5 01N60S5 01N60 SPD01N60S5 SPU01N60S5 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193
01n60 Abstract: 01N60C3 SPS01N60C3 Text: 01N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.8 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO251-3-11 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPS01N60C3 PG-TO251-3-11 PG-TO251-3-11 01N60C3 01n60 01N60C3 SPS01N60C3
01N60C3 Abstract: SPN01N60C3 VPS05163 smd diode MARKING 03A Text: 01N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 6 Ω ID 0.3 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance	Original	PDF	SPN01N60C3 OT-223 Q67040-S4208 VPS05163 01N60C3 01N60C3 SPN01N60C3 VPS05163 smd diode MARKING 03A
SPD01N60S5 Abstract: 01N60S5 SPU01N60S5 01N60 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193 Text: 01N60S5 01N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 6 Ω ID 0.8 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPU01N60S5 SPD01N60S5 P-TO252 P-TO251-3-1 Q67040-S4193 01N60S5 SPD01N60S5 01N60S5 SPU01N60S5 01N60 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193
01N60 Abstract: BFR 965 01N6 dpak 369C NDD01N60 Text: 01N60, 01N60 N-Channel Power MOSFET 600 V, 8.5 W Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant ABSOLUTE MAXIMUM RATINGS TJ = 25°C unless otherwise noted Drain−to−Source Voltage	Original	PDF	NDD01N60, NDT01N60 NDD01N60/D 01N60 BFR 965 01N6 dpak 369C NDD01N60
01N60S5 Abstract: SPD01N60S5 SPU01N60S5 Text: 01N60S5 01N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:	Original	PDF	SPU01N60S5 SPD01N60S5 SPUx7N60S5/SPDx7N60S5 P-TO251-3-1 P-TO252 01N60S5 01N60S5 Q67040-S4193 SPD01N60S5
Untitled Abstract: No abstract text available Text: 01N60S5 Preliminary data Cool MOS Small-Signal-Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology D,2/4 • Ultra low gate charge 4 • Extreme dv/dt rated 3 •=Optimized capacitances G,1 2 S,3 •=Improved noise immunity	Original	PDF	SPN01N60S5 SPN01N60S5 OT-223 01N60S5 VPS05163 Q67040-S4208
Untitled Abstract: No abstract text available Text: NDDL1N60Z, NDTL1N60Z Product Preview N-Channel Power MOSFET 600 V, 15 W Features http://onsemi.com • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V BR DSS RDS(ON) MAX 600 V 15 W @ 10 V ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)	Original	PDF	NDDL1N60Z, NDTL1N60Z NDDL1N60Z/D
SPN01N60S5 Abstract: 01n60 01N60S5 GPS05560 VPS05163 Text: 01N60S5 Preliminary data D,2/4 Cool MOS Small-Signal-Transistor 4 • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated 3 G,1 • Optimized capacitances 2 S,3 1 • Improved noise immunity VPS05163 COOLMOS Power Semiconductors	Original	PDF	SPN01N60S5 VPS05163 SPN01N60S5 OT-223 01N60S5 Q67040-S4208 01n60 01N60S5 GPS05560 VPS05163
STK and STR integrated circuits Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram	Original	PDF	OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
TRANSISTOR SMD MARKING CODE 2A Abstract: 01N60C3 01n60 SPN01N60C3 VPS05163 smd diode MARKING 03A Text: 01N60C3 Rev. 2.1 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.3 A • New revolutionary high voltage technology • Ultra low gate charge SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance	Original	PDF	SPN01N60C3 OT-223 Q67040-S4208 VPS05163 01N60C3 TRANSISTOR SMD MARKING CODE 2A 01N60C3 01n60 SPN01N60C3 VPS05163 smd diode MARKING 03A
01N60C3 Abstract: 01N60 603 to252 Q67040-S4188 Q67040-S4193 SPD01N60C3 SPU01N60C3 Text: 01N60C3 01N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.8 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO252 • Periodic avalanche rated PG-TO251 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPU01N60C3 SPD01N60C3 PG-TO252 PG-TO251 Q67040-S4193 01N60C3 01N60C3 01N60 603 to252 Q67040-S4188 Q67040-S4193 SPD01N60C3 SPU01N60C3
01N60C3 Abstract: P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193 SPD01N60C3 SPU01N60C3 01N60 Text: 01N60C3 01N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 6 Ω ID 0.8 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPU01N60C3 SPD01N60C3 P-TO252 P-TO251-3-1 Q67040-S4193 01N60C3 01N60C3 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193 SPD01N60C3 SPU01N60C3 01N60
01N60S5 Abstract: 01n60 SPD01N60S5 SPU01N60S5 Text: 01N60S5 01N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on • Optimized capacitances ID P-TO252	Original	PDF	SPU01N60S5 SPD01N60S5 SPUx7N60S5/SPDx7N60S5 P-TO252 P-TO251-3-1 P-TO251-3-1 Q67040-S4193 01N60S5 01n60 SPD01N60S5

SPN01N60S5 Abstract: No abstract text available Text: 01N60S5 Final data Cool MOSä ä Power-Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Extreme dv/dt rated VDS @ Tjmax • Optimized capacitances RDS on • Improved noise immunity ID 650 V 6 Ω 0.3	Original	PDF	SPN01N60S5 OT-223 VPS05163 Q67040-S4208 01N60S5 SPN01N60S5
01n60c3 Abstract: PG-TO251-3-1 Text: 01N60C3 01N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.8 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO252 • Periodic avalanche rated PG-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPU01N60C3 SPD01N60C3 PG-TO252 PG-TO251-3-1 SPD01N60C3 Q67040-S4188 01N60C3 01N60C3 PG-TO251-3-1
Untitled Abstract: No abstract text available Text: 01N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 6 Ω ID 0.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO251-3-11 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPS01N60C3 PG-TO251-3-11 PG-TO251-3-11 01N60C3 PG-TO-251-3-11
01N60C Abstract: 01n60c3 SPS01N60C3 01N60 Text: 01N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.8 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO251-3-11 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPS01N60C3 PG-TO251-3-11 PG-TO251-3-11 01N60C3 PG-TO-251-3-11 01N60C 01n60c3 SPS01N60C3 01N60
01N60 Abstract: 01n60c3 P-TO251-3-1 603 marking to252 P-TO252 Q67040-S4188 Q67040-S4193 SPD01N60C3 SPU01N60C3 01N6 Text: 01N60C3 01N60C3 Rev. 2.0 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.8 A • New revolutionary high voltage technology • Ultra low gate charge P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPU01N60C3 SPD01N60C3 P-TO252 P-TO251-3-1 Q67040-S4193 01N60C3 01N60 01n60c3 P-TO251-3-1 603 marking to252 P-TO252 Q67040-S4188 Q67040-S4193 SPD01N60C3 SPU01N60C3 01N6
V4680 Abstract: 01N60S5 SPN01N60S5 smd diode code 03a GPS05560 VPS05163 smd diode MARKING 03A Text: 01N60S5 Preliminary data Cool MOS Power-Transistor COOLMOS •=New revolutionary high voltage technology Power Semiconductors • Ultra low gate charge Product Summary • Extreme dv/dt rated VDS @ Tjmax •=Optimized capacitances RDS on •=Improved noise immunity	Original	PDF	SPN01N60S5 OT-223 Q67040-S4208 VPS05163 01N60S5 V4680 01N60S5 SPN01N60S5 smd diode code 03a GPS05560 VPS05163 smd diode MARKING 03A
01N60 Abstract: SID01N FET marking code RD-187 FET marking codes FET MARKING QG 100C RD187 Text: 01N60 1.6A, 600V,RDS ON 8Ω N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente RoHS Compliant Product TO-251 Description 2.3±0.1 6.6±0.2 5.3±0.2 The 01N60 provide the designer with the best combination 0.5±0.05 of fast switching.	Original	PDF	SID01N60 O-251 SID01N60 O-251 01N60 01-Jun-2002 01N60 SID01N FET marking code RD-187 FET marking codes FET MARKING QG 100C RD187
TO-251 footprint Abstract: 01n60c3 603 marking to252 infineon marking TO-252 SPU01N60C3 603 to252 Q67040-S4188 Q67040-S4193 SPD01N60C3 01n60 Text: 01N60C3 01N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.8 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO252 • Periodic avalanche rated PG-TO251 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPU01N60C3 SPD01N60C3 PG-TO252 PG-TO251 Q67040-S4193 01N60C3 TO-251 footprint 01n60c3 603 marking to252 infineon marking TO-252 SPU01N60C3 603 to252 Q67040-S4188 Q67040-S4193 SPD01N60C3 01n60
Untitled Abstract: No abstract text available Text: 01N60C3 01N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 6 Ω ID 0.8 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPU01N60C3 SPD01N60C3 P-TO252 P-TO251-3-1 P-TO251-3-1 Q67040-S4193 Q67040-S4188
01N60J Abstract: No abstract text available Text: Advanced Power Electronics Corp. 01N60H/J-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D 100% Avalanche Test Fast Switching Characteristics G RoHS-compliant, halogen-free BV DSS 600V R DS ON 8Ω ID 1.6A S Description D (tab) G	Original	PDF	AP01N60H/J-HF-3 O-252 AP01N60H-HF-3 O-252 O-251 AP01N60J-HF-3) AP01N60 01N60J O-251 01N60J

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01N60 Search Results

01N60 Price and Stock

Micro Commercial Components MCU01N60A-TP

Infineon Technologies AG IKN01N60RC2ATMA1

Rochester Electronics LLC SPS01N60C3

Infineon Technologies AG SPS01N60C3

onsemi NDD01N60T4G

01N60 Datasheets Context Search

01N60S5

01n60

01N60C3

SPD01N60S5

01N60

01N60S5

Untitled

Untitled

SPN01N60S5

STK and STR integrated circuits

TRANSISTOR SMD MARKING CODE 2A

01N60C3

01N60C3

01N60S5

SPN01N60S5

01n60c3

Untitled

01N60C

01N60

V4680

01N60

TO-251 footprint

Untitled

01N60J