0235BG5 Search Results

BD 649

Abstract: 2SC 645 TOP-66 BD 104 NPN darlington bd 645 BD 649/BD 650 BD647 BD 104 Q62702-D229 Q62901-B65
Contextual Info: 25C D • 0235bG5 0004307 7 ■ S I E û , NPN Silicon Darlington Transistors T - 3 3 -2 9 SIEMENS AKTIENfiESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase p o w e r d arlin g to n transistors 6 2 .5 W BD 6 4 3 , BD 6 4 5 , BD 6 4 7 , and BD 6 4 9 are monolithic NPN silicon epibase power darlington

BSM25GB120D

Abstract: C160 SC10 siemens igbt BSM 150 Gb 160 d SIEMENS ks
Contextual Info: LOE D • 0235bG5 QOMSÛ1L 2 2 ? « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF '7 ^ 3 3 - 0 7 BSM 25 GB 120 D BSM 25 G AL 120 D IGBT Module Preliminary Data VCE = 1200 V = 2 x 35 A at r c = 2 5 C = 2 x 2 5 A at r o = 8 0 'C Ic Ic • Power module • 3-phase full bridge

Contextual Info: bOE D T - 4 f-£>0 0235bG5 004b54H Sb3 « S I E G SFH 2210 SIEMENS TERNARY PIN PHOTODIODE T 01 8 P A C K A G E SIEMENS AKTIENGESELLSCHAF Preliminary Data Sheet Package Dimensions in mm Chip Location -*H] FEATURES Maximum Ratings • InGaAs/lnP PIN Photodiode

siemens sab 82532

Abstract: 82258 SA 82532 SAB 80286 csc 2323 sab80286 STT 3 SIEMENS 80286 microprocessor pin out diagram ESCC2 siemens sab 82525
Contextual Info: SIEM ENS Enhanced Serial Communication Controller ESCC2 SAB 82532 Preliminary Data 1.1 CMOS 1C General Features S erial Interface • Two independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each

PLCC-68 8051 siemens

Abstract: 80C32 smd marking b4h smd marking code fj FET 80C515 80C535 80c535-n ma A235 sab-80535 SMD MARKING CODE E2H
Contextual Info: I flB3SbOS 0002020 321 SIEMENS High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C515/80C535 Preliminary SAB 80C515/80C515-16 SAB 80CS35/80C535-16 CMOS microcontroller with factory mask-programmable ROM CMOS microcontroller for external ROM • 8 K x 8 ROM SAB 80C515 only

smd transistor 2gu

Abstract: smd 5b1 5B1 zener diode smd transistor 5B1 smd diode hn 5B1 package SMD smd TRANSISTOR code AJ e3062a SMD DIODE 517 BTS442D2
Contextual Info: • □0^27^5 aP3SbGS SIEM ENS ST1 ■ PROFET BTS 442 D2 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Features • • • • • • • • Overload protection

eeprom 24C16 5 pin

Abstract: 24C16-S 24C08 CHIP 8-PIN 24c16 24c16 EEPROM 24c16 wp DATA SHEET 24C16 24c08 wp 24C16 application Q67100-H3226
Contextual Info: • ÔE35h05 □□TûflTfl h3S ■ S IE M E N S 8/16 K bit 1024/2048 x 8 bit Serial C M O S EE P R O M s, I 2C Synchro n o us 2-W ire Bus S L x 2 4C 08 /1 6 Preliminary Features I • Data EEPROM internally organized as 1024/2048 bytes and 64/128 pages x 16 bytes

Contextual Info: SIEM EN S SAB-C501 8-Bit C M O S M icroco n tro ller • Fully compatible to standard 8051 microcontroller • Versions for 12/20/40 MHz operating frequency • 8 K x 8 ROM SAB-C501 -1R only • 256 x 8 RAM • Four 8-bit ports • Three 16-bit Timers / Counters (Timer 2

SAB 82258

Abstract: sab82257
Contextual Info: 4 7E D Device Specifications • fiSBSbGS SIEI1ENS DD330S1 1 « S IE G AKTI ENGESELLSCHAF Preliminary T - « 3 - 3 3 - l et SAB 82257 High-Performance DMA Controller for 16-Bit Microcomputer Systems SAB 82257 SAB 82257-6 8 MHz 6 MHz • • • • 16 Mbytes addressing range

Contextual Info: 47E D SIEMENS • fi23SbOS 0031bl0 <3 ■ SIEG SIEMENS AKTIENGESEL LSCHAF SAB 82C212 Page/Interleave Memory Controller of Siemens PC-AT Chipset Advance Information 157 3.90 M7E » I fl2 3 5 b 0 5 G 0 3 1 b ll SIEMENS AKTIENGESELLSCHAF □ ■ S IE G SAB 82C212

LA 7612

Abstract: 4727 TLE SO CAY transistor sd 3 phase monitoring IC IED01769 IED01772 IED01780 IED01781 IED01782
Contextual Info: SIEMENS 2 -P hase S tepper-M o tor D river TLE 4727 Overview Bipolar 1C Features • 2 x 0.7 amp. outputs • Integrated driver, control logic and current control chopper • Fast free-wheeling diodes • Max. supply voltage 45 V • Outputs free of crossover current

B41550-A7478-Q

Abstract: A9688
Contextual Info: Capacitors with Screw Terminals SIKOREL 105, LL Grade B 41 550 B 41 570 Maximum reliability For highly professional switch-mode power supplies Operating temperatures up to 105 "C Construction • • • • • Charge-discharge proof, polar Aluminum case with insulating sleeve

Contextual Info: SIEMENS ¿ ¿ ¿ ¿ : ^íííííííííííííííííííííííííí^íííííííííííííííííííííííí^íí: ^ ^ ^ ^ ^ ^ ^ ^ ^ íí? íí? ? í? ? ííí:á íííí? íí? í^ ííf í^ : íííííííííííííííííííííííííííííííííííííííí^^ííííífííííííí:

Contextual Info: SIEM ENS 256k X 16-Bit Dynamic RAM HYB 514171BJ-50/-60 Advanced Inform ation • 262 144 w ords by 16-bit organization • 0 to 70 °C operating tem perature • Fast access and cycle time • RAS access time: 50 ns -50 version 60 ns (-60 version) • CAS access time:

POWER SUPPLY BTS SIEMENS

Abstract: siemens pwm 12v BTS630 E3230 sis 630 application note BTS SMD MARKING code 613
Contextual Info: SIEMENS BTS 630 PWM Power Unit The device allows continuous power control for lamps,LEDs or inductive loads. • Highside switch • Overtemperatur protection • Short circuit / overload protection through pulse widt reduction and overload shutdown • Load dump protection

DDMS770

Abstract: PC1210 SiEMENS EC 350 98 0
Contextual Info: bGE ]> • Ô235b05 00457ti5 T3S M S I E C SIEMENS SIEMENS AKTI ENGESELLSCHAF ■7- 2 3 - Ö SI MOPAC Module VDS / d 7 BSM 294 F = 1000 V = 2 x 18 A R DS on = 0.63 £2 • • • • • • • Power module Half-bridge FREDFET N channel Enhancement mode

Contextual Info: BUZ 73 Infineon technologies SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs b ^DS on Package Ordering Code BUZ 73 200 V 7A 0.4 £2. TO-220 AB C67078-S1317-A2 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: SIEMENS Differential Magneto Resistor FP 412 L 100 t If delivery as tape,separate at punching-points 2) Connections on both sides free of lacquer g p x o 6777 3) Mechanical connections 4) Center—distance of Diff.-System s Approx. weight 0.2 g 2 1.3 pin connection

Contextual Info: •I ô23SbG5 □GC13Ü32 1 3 e ■ SIEM ENS PROFET BTS707 Smart Two Channel Highside Power Switch Features Product Summary • • • • • • • Overload protection Current limitation Short-circuit protection Thermal shutdown Overvoltage protection

Contextual Info: SIEMENS SDA 4330-2X 1 Overview 1.1 Features • • • • • • 155 MHz FM and 40 MHz AM input frequency 30 mVeff AM and 50 mVeff FM sensitivity 16 bit IF counter up to 50 MHz Additional open drain ports controlled by PC 2-pin quartz oscillator Fast phase detector with short anti-backlash pulses

Transistor SMD SM 942

Contextual Info: SPD 30N03 I nf ineon tec h n o l og i « s SIPMOS Power Transistor Product Summary Features Drain source voltage • N channel • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current V 'd s f l D S o n fc> 30

Contextual Info: ñ23SbGS 00^3073 4SI SIEMENS PROFET BTS 733 L1 Smart Two Channel Highside Power Switch Product Summary Overvoltage Protection • • • • • • • Overload protection Current limitation Short-circuit protection Thermal shutdown Overvoltage protection

Contextual Info: SIEMENS Differential Magneto Resistor FP 412 D 250 1 If delive ry a s ta p e , se p a ra te a t p u n ch in g —points 2 ) C on n e ctio n s on both sid e s fre e o f la c q u e r 3 ) M ech a n ica l co n n e c tio n s 4 ) C e n te r - d is ta n c e o f D iff.- S y s t e m s

Contextual Info: SIEMENS 1M x 4-Bit Dynamic RAM HYB 314400BJ/BJL-50/-60/-70 Advanced Information • 1 048 576 words by 4-bit organization • 0 to 70 ’C operating temperature • Fast Page Mode Operation • Performance: • -50 -60 -70 50 60 70 ns ^RAC RAS access time