as 350
Abstract: HITFET BTS117 Siemens Smart Power IC BTS117 Q67060-S6500-A3
Text: • ÛEBSbOS DDÔ12Ô4 31b I S IE M E N S HITFET BTS117 Smart Lowside Power Switch Features Product Summary • • • • • • • • • Continious drain source voltage On-state resistance Current limitation Load current ISO Clamping energy Logic Level input
|
OCR Scan
|
PDF
|
BTS117
fl23SbDS
00A12T1
Q67060-S6500-A2
T0220
E3045A
Q67060-S6500-A3
as 350
HITFET BTS117
Siemens Smart Power IC
BTS117
Q67060-S6500-A3
|
Untitled
Abstract: No abstract text available
Text: SIEM ENS Silizium-PIN-Fotodiode mit sehr kurzer Schaitzeit Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Silicon PIN Photodiode with Very Short Switching Time Silicon PIN Photodiode with Daylight Filter SFH 217 SFH 217 F Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
|
OCR Scan
|
PDF
|
fi235bG5
|
LA 7612
Abstract: 4727 TLE SO CAY transistor sd 3 phase monitoring IC IED01769 IED01772 IED01780 IED01781 IED01782
Text: SIEMENS 2 -P hase S tepper-M o tor D river TLE 4727 Overview Bipolar 1C Features • 2 x 0.7 amp. outputs • Integrated driver, control logic and current control chopper • Fast free-wheeling diodes • Max. supply voltage 45 V • Outputs free of crossover current
|
OCR Scan
|
PDF
|
Q67000-A9099
P-DIP-20-3
S235b05
01G3b2Q
25I20X
01Q3b21
LA 7612
4727
TLE SO
CAY transistor sd
3 phase monitoring IC
IED01769
IED01772
IED01780
IED01781
IED01782
|
8250 uart
Abstract: USART multiprocessor 79C401 Universal Synchronous Asynchronous Receiver Transmitter DPMC
Text: T - T S '- 3 7 -0 7 S IE M E N S SIEMENS AKTIENGESELLSCHAF 47E D • fl53SbOS 003bSbS □ ■ SIE6 Integrated Data Protocol Controller IDPC SAB 79C401 ADVANCE INFORMATION General Description The SAB 79C401 Integrated Data Protocol Controller (IDPC) provides many of the essential
|
OCR Scan
|
PDF
|
fl53SbOS
003bSbS
79C401
79C401
79C30
68-pin
8250 uart
USART multiprocessor
Universal Synchronous Asynchronous Receiver Transmitter
DPMC
|
Untitled
Abstract: No abstract text available
Text: SIEM ENS Silicon Schottky Diodes BAT 14-. 5 D • Beam lead technology • Low dimension • High performance • Medium barrier VCE05181 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BAT 14-025 D
|
OCR Scan
|
PDF
|
VCE05181
Q62702-A790
Q62702-A793
Q62702-A797
Q62702-A800
EHA07010
S235b05
|
A4200
Abstract: bup304 PS 307 5A 65027 C3523 BUP 307 Q67078-A4200-A2 BUP 304
Text: I ! SIEMENS BUP 304 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type l^CE h 1000V 35A BUP 304 Pin 3 C E Package Ordering Code TO-218 AB Q67078-A4200-A2
|
OCR Scan
|
PDF
|
O-218
Q67078-A4200-A2
6E35b05
S235b05
D0flS031
A4200
bup304
PS 307 5A
65027
C3523
BUP 307
Q67078-A4200-A2
BUP 304
|
Untitled
Abstract: No abstract text available
Text: SIEMENS ¿ ¿ ¿ ¿ : ^íííííííííííííííííííííííííí^íííííííííííííííííííííííí^íí: ^ ^ ^ ^ ^ ^ ^ ^ ^ íí? íí? ? í? ? ííí:á íííí? íí? í^ ííf í^ : íííííííííííííííííííííííííííííííííííííííí^^ííííífííííííí:
|
OCR Scan
|
PDF
|
G10404Ã
C509-L
A8-A15
A535bDS
235bD5
|
Untitled
Abstract: No abstract text available
Text: PMB 2306R/PMB 2306T SIEMENS Table of Contents Page 1 1.1 1.2 1.3 1.4 O v erv ie w .3 F eatures. 3
|
OCR Scan
|
PDF
|
2306R/PMB
2306T
P-DSO-14-1
P-DSO-14-1
35x45'
SSH14X
|
633sb
Abstract: No abstract text available
Text: fl235bOS D037b47 7 SIEG □ M K T Capacitors SIEMENS A KT IE N G E S E L L S C H A F M7E D B 32520 .B 32529 ft~ O S l7-o M etalized polyester film capacitors in accordance w ith D IN 44112 VR = 6 3 to 6 3 0 Vdc W ith quality a sse ssm e n t according to C E C C 30401-043, edition 1, June 1983.
|
OCR Scan
|
PDF
|
fl235bOS
D037b47
633sb
|
SIEMENS 3TB
Abstract: siemens 3tb 40 doz 112 D16J 3tb 50 siemens siemens serial
Text: SIEMENS 3.3V 4M x 64-Bit SDRAM Module 3.3V 4M x 72-Bit SDRAM Module HYS64V4000GU HYS72V4000GU 168 pin unbuffered DIMM Modules Prelim inary Inform ation • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-ln-Line SDRAM Module • 1 bank 4M x 64, 4M x 72 organisation
|
OCR Scan
|
PDF
|
64-Bit
HYS64V4000GU
72-Bit
HYS72V4000GU
SPT02921
B23SbD5
SIEMENS 3TB
siemens 3tb 40
doz 112
D16J
3tb 50 siemens
siemens serial
|
71001 EB
Abstract: siemens ecu Q67120-C771 CMO 765 RC fet marking code P2 SAB-80C517A-N18-T3 SIEMENS 80515 siemens ecu ems bsy 28-90 Changing from the 80C537
Text: Device Specification SIEM EN S High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C517A/83C517A-5 Preliminary SAB 83C517A-5 SAB 80C517A Microcontroller with factory mask-programmable ROM Microcontroller for external ROM • SAB 80C517A/83C517A-5,
|
OCR Scan
|
PDF
|
80C517A/83C517A-5
83C517A-5
80C517A
80C517A/83C517A-5,
80C51
16-bit
S23SbDS
P-LCC-84
71001 EB
siemens ecu
Q67120-C771
CMO 765 RC
fet marking code P2
SAB-80C517A-N18-T3
SIEMENS 80515
siemens ecu ems
bsy 28-90
Changing from the 80C537
|
neosid v6
Abstract: OV56 AM2 Siemens neosid v7 V55D neosid CAP neosid 3.3 NEOSID nr. 9181 Diode LT 330D
Text: FS: 04/93 Pag« 2 SIEMENS AG IC-SPECIFICATION TUA 4300 G Table of Contents ONE CHIP CAR RADIO Differences to the last edition Page 1 Table of Contents Page 2 Functional Description, Application Page 3 . 4 Circuit Description Page 5 . 6 Block Diagram Page
|
OCR Scan
|
PDF
|
10kHz
13kHz
2x10kHz-19kHz
3x13kHz-38kHz
57kHz
V66047-S695-G100-G1
fl235b05
D137bbfl
neosid v6
OV56
AM2 Siemens
neosid v7
V55D
neosid CAP
neosid 3.3
NEOSID
nr. 9181
Diode LT 330D
|
Untitled
Abstract: No abstract text available
Text: fi23SbOS 00012=12 M=12 S IEM EN S HITFET BTS 133 Smart Lowside Power Switch Features Product Summary • Logic Level Input • Input protection ESD • Thermal shutdown • Overload protection • Short circuit protection • Overvoltage protection • Current limitation
|
OCR Scan
|
PDF
|
fi23SbOS
TQ220_
T0220
E3045A
Q67060-S6501-A2
Q67060-S6501
PT05155
|
scr 708 ag
Abstract: BS4 siemens 612N1 STT 3 SIEMENS BTS 716 G smd smd diode hn BTS 716 G POWER SUPPLY BTS SIEMENS smd zener diode code J1 BTS612
Text: •I Ô23SL.G5 D CH S Tì S bS4 ■ SIEMENS BTS612 N1 Smart Two Channel Highside Power Switch Features • • • • • • • • • • • • • Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection including load dump
|
OCR Scan
|
PDF
|
BTS612
systems15'
scr 708 ag
BS4 siemens
612N1
STT 3 SIEMENS
BTS 716 G smd
smd diode hn
BTS 716 G
POWER SUPPLY BTS SIEMENS
smd zener diode code J1
|
|
|
Siemens k1403
Abstract: SKM 181 R siemens Package Outlines P-LCC Q67100-H6562 ic ZN 415 SBGX skm 191 siemens si 200 LC Communication cable pin diagram k1403 marking kjd
Text: S IE M E N S S /T Bus Interface C ircuit Extended 1 PEB 2081 Features • Full duplex 2B+D S/T-interface transceiver according to the following specifications: - ITU Recommendation 1.430 - ETS 300 012 - ANSI T 1.605 • 192 kbit/s transmission rate • Pseudo-ternary coding with 100 % pulse width
|
OCR Scan
|
PDF
|
P-LCC-28-R
251BI
25IAI
A23SbDS
Siemens k1403
SKM 181 R
siemens Package Outlines P-LCC
Q67100-H6562
ic ZN 415
SBGX
skm 191
siemens si 200 LC Communication cable pin diagram
k1403
marking kjd
|
MIP211
Abstract: LSC series Microcontroller by MOTOROLA 007011 siemens Motorola LSC microcontroller ITP05590 siemens modules GR 60 48 V 120 A dtmfgenerator B2M marking Q67100-H6458 converter siemens modules GR 60 48 V 120 A
Text: SIEMENS Audio Ringing Codec Filter Featuring Speakerphone Function ARCOFI -SP PSB 2163 Preliminary Data BICMOS-IC 1 • • • • • • • • • • • • • • • • • • • • Features Applications in digital terminal equipment featuring voice
|
OCR Scan
|
PDF
|
NET33)
16-bit
100-mW
P-LCC-28-1
fl235fc
MIP211
LSC series Microcontroller by MOTOROLA
007011 siemens
Motorola LSC microcontroller
ITP05590
siemens modules GR 60 48 V 120 A
dtmfgenerator
B2M marking
Q67100-H6458
converter siemens modules GR 60 48 V 120 A
|
14558
Abstract: C67078-A1014-A2 14558D
Text: ßöD D • û235bOS QQmSSÖ ^38D 14 558 SIEM EN S D 3 « S IE G 'T '3 t f" / BUZ 35 A K T I E N ß E S E L L S C H A F _ Main ratings N-Channel Drain-source voltage Vos = 200 V Continuous drain current Ia = 9,9 A Drain-source on-resistance A0S(on = 0,4 £2
|
OCR Scan
|
PDF
|
235bOS
C67078-A1014-A2
14558
C67078-A1014-A2
14558D
|
Untitled
Abstract: No abstract text available
Text: Standard Chip Capacitors X7R/2R1 Features • High volumetric efficiency • Non-linear capacitance change • High insulation resistance • High pulse strength A pplications • Blocking • Coupling • Decoupling • Interference suppression Dim ensions mm
|
OCR Scan
|
PDF
|
-K5473-K01
fi23SbOS
DP75167
AC/C25
s235bQ5
|
AEB02072
Abstract: AES02079 GPS05123
Text: SIEM EN S TrilithlC BTS 770 Overview Features • • • • • • • • • • • • • • • • • Quad switch driver Free configurable as bridge or quad-switch Optimized for DC motor management applications Ultra low RDSou @ 25 °C: High-side switch: typ.165 mQ,
|
OCR Scan
|
PDF
|
P-DSO-28-9
P-DSO-28-9
-TO2128X
35x45Â
GPS05123
AEB02072
AES02079
|
B23SL
Abstract: No abstract text available
Text: SIEMENS ICs for Communications Intelligent Network Termination Controller 2B1Q INTC-Q PEB 8191 Version 1.1 PEF 8191 Version 1.1 D a ta s h e e t 10.97 DS 1 Edition 10.97 T his e d ition w a s realized using the so ftw a re syste m Fram eM aker . Published by Siemens AG,
|
OCR Scan
|
PDF
|
S235b05
010720b
B23SL
|
SS35L
Abstract: smd marking YB Q67100-Q1244 AAFL1
Text: SIEM EN S 16 MBit Synchronous DRAM Preliminary Information • High Performance: CAS latency = 3 -10 -12 Units fCK 100 83 MHz tCK3 10 12 ns tAC3 8 10 ns • Multiple Burst Operation Read • Autom atic Com mand • Data M ask for Read / W rite control x4, x8
|
OCR Scan
|
PDF
|
0235bOS
SS35L
smd marking YB
Q67100-Q1244
AAFL1
|
Untitled
Abstract: No abstract text available
Text: SIEMENS PEB 2046 PEF 2046 Memory Time Switch Small MTSS CMOS 1C Preliminary Data 1 Features • Time/space switch for 2048-kbit/s PCM systems • Switching of up to 256 incoming PCM channels to up to 256 outgoing PCM channels • 8-input and 8-output PCM lines
|
OCR Scan
|
PDF
|
2048-kbit/s
8192-kHz
Q6710Ã
-H61Q4
Q67100-H6105
2046-P
2046-N
Q67100-H6108
235LDS
|
siemens gaas fet
Abstract: E7916 pinFET marking c6 cerec
Text: SIEMENS GaAs FET CFY 25-20 E7916 Preliminary Data • • • • • Low noise High gain Low gate-leakage current All gold metallization For high-speed fibre optic receivers and PIN-FET modules up to 2.4 Gbit/sec VC E05255 ESD: Electrostatic discharge sensitive device, observe handling precautions!
|
OCR Scan
|
PDF
|
E7916
E05255
E7916
Q62703-F113
fl23SbOS
D0b7S13
A235b05
00b7Sm
siemens gaas fet
pinFET
marking c6
cerec
|
SAF-C515C
Abstract: No abstract text available
Text: • a53SbDS DQfl3SMb 3 1 7 Device Specifications C515C SIEMENS 10 Device Specifications 10.1 A bsolute M aximum Ratings Ambient temperature under bias TA . 0 'C to + 110 °C Storage temperature ( T St ) . - 65 "C to + 150 °C
|
OCR Scan
|
PDF
|
a53SbDS
C515C
235b05
P-MQFP-80-1
CI80x
SAF-C515C
|