024 MARKING UNIDIRECTIONAL DIODE Search Results

SMS05C

Contextual Info: SMS05C through SMS24C TVS Diode Array For ESD and Latch-Up Protection PROTECTION PRODUCTS Description Features ‹ Transient protection for data lines to The SMS series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to

SMS05C

Abstract: SMS12C SMS15C SMS24C
Contextual Info: SMS05C through SMS24C TVS Diode Array For ESD and Latch-Up Protection PROTECTION PRODUCTS Description Features ‹ Transient protection for data lines to The SMS series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to

MARKING AAA sot23

Abstract: free IR circuit diagram SMS05 SMS12 SMS15 SMS24
Contextual Info: SMS05 through SMS24 TVS Diode Array For ESD and Latch-Up Protection PROTECTION PRODUCTS Description Features ‹ Transient protection for data lines to The SMS series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to

free IR circuit diagram

Abstract: SMS05 SMS12 SMS15 SMS24
Contextual Info: SMS05 through SMS24 TVS Diode Array For ESD and Latch-Up Protection PROTECTION PRODUCTS Description Features ‹ Transient protection for data lines to The SMS series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to

Contextual Info: SMS05 through SMS24 TVS Diode Array For ESD and Latch-Up Protection PROTECTION PRODUCTS Description Features ‹ Transient protection for data lines to The SMS series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to

SMS12.TCT

Abstract: sms15.tct SMS24T MARKING AAA sot23
Contextual Info: SMS05 through SMS24 TVS Diode Array For ESD and Latch-Up Protection PROTECTION PRODUCTS Description Features ‹ Transient protection for data lines to The SMS series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to

SMS15

Abstract: SMS24 SMS05 SMS12 MARKING code 05
Contextual Info: SMS05 through SMS24 TVS Diode Array For ESD and Latch-Up Protection PROTECTION PRODUCTS Description Features ‹ Transient protection for data lines to The SMS series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to

DIODE marking L12

Abstract: SL05 SL24 DIODE marking Sl
Contextual Info: SL05 through SL24 Low Capacitance TVS Diode For High Speed Data Interfaces PROTECTION PRODUCTS Description Features The SL series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD, lightning, and other voltage-induced transient

SL05

Abstract: SL24 SL05.TCT
Contextual Info: SL05 through SL24 Low Capacitance TVS Diode For High Speed Data Interfaces PROTECTION PRODUCTS Description Features The SL series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD, lightning, and other voltage-induced transient

SC89

Abstract: SC-89
Contextual Info: uClamp3304A µClampTM 4-Line ESD protection Array PROTECTION PRODUCTS - MicroClampTM Description Features The µClampTM series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD. They are designed for use in applications where

DIODE marking Sl

Abstract: SL15.TCt
Contextual Info: SL05 through SL24 Low Capacitance TVS Diode For High Speed Data Interfaces PROTECTION PRODUCTS Description Features The SL series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD, lightning, and other voltage-induced transient

M24 sot23

Abstract: M05 SOT-23 marking code M05 marking code SM diode M15 SOT-23 marking code m05 sot23 6
Contextual Info: SEMTECH Today*« R a u ik i.1 Revised - February 16, 1999 S M 05 thru 300W Surface Mount TVS Diode TEL805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION FEATURES The SM series of transient voltage suppressors TVS are designed to protect components which are

Contextual Info: uClamp3304A µClampTM 4-Line ESD protection Array PROTECTION PRODUCTS - MicroClampTM Description Features The µClampTM series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD. They are designed for use in applications where

SMS3.3.TCT

Abstract: marking code 10 sot23 tvs MARKING CODE LAYOUT SOT23 MARKING AAA sot23
Contextual Info: SMS3.3 3.3 Volt TVS Array For ESD and Latch-Up Protection PROTECTION PRODUCTS Description Features ‹ Transient protection for data lines to The SMS series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD, lightning, and other voltage-induced transient

1N4148 JANTX microsemi

Abstract: 1N4148 JANTX 1N4148 JANTXV 1N4148UB 1n4148 general diode microsemi 1n4148 EIA-418D
Contextual Info: 1N4148UB Compliant Qualified Levels: JAN, JANTX, and JANTXV Switching Diode Qualified per MIL-PRF-19500/116 DESCRIPTION This 1N4148UB switching/signal diode features ceramic bodied construction for military grade products per MIL-PRF-19500/116. This small low capacitance diode, with very fast switching

SM05-TCT

Abstract: SM12.TCT SM05.TCT MARKING AAA sot23 DIODE MARKING CODE LAYOUT G SOT23 FP 801 marking code 10 sot23 tvs MARKING CODE LAYOUT SOT23 SM05 SM15
Contextual Info: SM05 through SM36 TVS Diode Array PROTECTION PRODUCTS Description Features The SM series of transient voltage suppressors TVS are designed to protect components which are connected to data and transmission lines from voltage surges caused by electrostatic discharge (ESD),

Contextual Info: SMS3.3 3.3 Volt TVS Array For ESD and Latch-Up Protection PROTECTION PRODUCTS Description Features ‹ Transient protection for data lines to The SMS series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD, lightning, and other voltage-induced transient

1N5711UB

Contextual Info: 1N5711UB and 1N5712UB CC, CA, & D Qualified Levels: JAN, JANTX, JANTXV and JANS Schottky Barrier Diode Ceramic Surface Mount Compliant Qualified per MIL-PRF-19500/444 DESCRIPTION This 1N5711UB and 1N5712UB Schottky barrier diode is ceramic encased and offers military

SM05

Abstract: SM12 SM15 SM24 SM36 SM05.TC M24 sot23 M15 marking diode
Contextual Info: SM05 through SM36 TVS Diode Array PROTECTION PRODUCTS Description Features The SM series of transient voltage suppressors TVS are designed to protect components which are connected to data and transmission lines from voltage surges caused by electrostatic discharge (ESD),

Contextual Info: ^ j| | \ y i " T " I I Low Voltage TVS Diode for ESD and Latch-Up Protection Preliminary - May 18, 1998 TEL:805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.com DESCRIPTION FEATURES The SLV series of transient voltage suppressors are designed to protect low voltage semiconductor

8Q DIODE

Abstract: U28 MARKING 8q diode sot23 u2.8 marking code YW DIODE
Contextual Info: SLVU2.8Q Low Voltage TVS Diode for Automotive Applications PROTECTION PRODUCTS Features Description ‹ 400 Watts peak pulse power tp = 8/20 s ‹ Transient protection for high speed data lines to The SLVU2.8Q transient voltage suppressor is rated to Grade 3 of AEC-Q100 for use in automotive applications. It is specifically designed to protect sensitive

UNIDIRECTIONAL

Contextual Info: SLVU2.8 Diode Low Voltage EPD TVS™ For ESD and Latch-Up Protection PROTECTION PRODUCTS Description Features The SLV series of transient voltage suppressors are designed to protect low voltage, state-of-the-art CMOS semiconductors from transients caused by electrostatic discharge ESD , cable discharge events (CDE),

SLVU2.8.TCT

Contextual Info: SLVU2.8 Low Voltage EPD TVS Diode For ESD and Latch-Up Protection PROTECTION PRODUCTS Description Features The SLV series of transient voltage suppressors are designed to protect low voltage, state-of-the-art CMOS semiconductors from transients caused by electrostatic discharge ESD , cable discharge events (CDE),

Contextual Info: SLVU2.8 Diode Low Voltage EPD TVS™ For ESD and Latch-Up Protection PROTECTION PRODUCTS Description Features The SLV series of transient voltage suppressors are designed to protect low voltage, state-of-the-art CMOS semiconductors from transients caused by electrostatic discharge ESD , cable discharge events (CDE),