SC89 Search Results

NTK3134NT1G

Abstract: NTK3134N NTK3134NT5G SC89 mosfet marking kf
Contextual Info: NTK3134N Power MOSFET 20 V, 890 mA, Single N−Channel with ESD Protection, SOT−723 Features • • • • • http://onsemi.com N channel Switch with Low RDS on 44% Smaller Footprint and 38% Thinner than SC89 Low Threshold Levels Allowing 1.5 V RDS(on) Rating

Contextual Info: UM5304EEXF Quad Channel Low Capacitance ESD Protection Array UM5304EEAF UM5304EEBF UM5304EECF SC70-6/SC88/SOT363 SC89-6/SOT563/SOT666 TSOP-6/SOT23-6 General Description UM5304EEXF are surge rated diode arrays designed to protect high speed data interfaces. This series has been

AO5800E

Abstract: Qg (nC) 70°C SC-89-6 SC89-6L alpha omega
Contextual Info: AO5800E Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5800E uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 4.5V, in the small SC89-6L footprint. It can be used for a wide

SC89

Contextual Info: Tape Information Vishay Siliconix Ĭ1.50"0.10 4.00"0.10 2.00"0.05 0.229"0.013 4.00"0.10 1.73"0.10 1.85 " 0.10 3.50 " 0.05 1.37 8.00 +0.20/- 0.10 1.75 " 0.10 SC89_3L 1.02"0.10 Ĭ0.40"0.10 0.229 "0.013 0.51 NOTES: 1. Mat’l: P.C Conductive 2. Surface Resistivity: Max 105 Ω/Sq

AO5800E

Abstract: SC-89-6 SC89-6L
Contextual Info: AO5800E Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5800E uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 4.5V, in the small SC89-6L footprint. It can be used for a wide

Contextual Info: AO5800E Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5800E uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 4.5V, in the small SC89-6L footprint. It can be used for a wide

Contextual Info: AO5800E Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5800E uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 4.5V, in the small SC89-6L footprint. It can be used for a wide

Contextual Info: NTK3134N Power MOSFET 20 V, 890 mA, Single N−Channel with ESD Protection, SOT−723 Features • • • • • http://onsemi.com N−Channel Switch with Low RDS on 44% Smaller Footprint and 38% Thinner than SC89 Low Threshold Levels Allowing 1.5 V RDS(on) Rating

Si1034CX-T1-GE3

Abstract: SC-89-6
Contextual Info: Specification Comparison Vishay Siliconix Si1034CX vs. Si1034X Description: Package: Pin Out: Dual N-Channel, 20 V D-S MOSFET SC89-6 Identical Part Number Replacements: Si1034CX-T1-GE3 replaces Si1034X-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

NTK3134NT1H

Abstract: mosfet marking kf
Contextual Info: NTK3134N Power MOSFET 20 V, 890 mA, Single N−Channel with ESD Protection, SOT−723 Features • • • • • http://onsemi.com N−Channel Switch with Low RDS on 44% Smaller Footprint and 38% Thinner than SC89 Low Threshold Levels Allowing 1.5 V RDS(on) Rating

Contextual Info: AO5803E Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5803E uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 1.8V, in the small SC89-6L footprint. It can be used as load

Contextual Info: UM5204EEXF Quad Channel Low Capacitance ESD Protection Array UM5204EEAF UM5204EEBF UM5204EECF SC70-6/SC88/SOT363 SC89-6/SOT563/SOT666 TSOP-6/SOT23-6 General Description UM5204EEXF are surge rated diode arrays designed to protect high speed data interfaces. This series has been

Contextual Info: UESD55B Quad Line ESD Protection Diode Array UESD55B SC89-6 / SOT563 / SOT666 General Description The UESD55B of TVS diode array is designed to protect sensitive electronics from damage or latch-up due to ESD, for use in applications where board space is at a premium. It is unidirectional

Contextual Info: UESD6V8L4A/B Low Capacitance Quad Line ESD Protection Diode Array UESD6V8L4A SC70-5/SC88A/SOT353 UESD6V8L4B SC89-5/SOT553/SOT665 General Description The UESD6V8L4A/B of TVS diode array is designed to protect sensitive electronics from damage or latch-up due to ESD, for use in applications where board space is at a premium. It is unidirectional device and may be

AO5803E

Abstract: AO5803EL SC-89-6 SC89-6L
Contextual Info: AO5803E Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5803E/L uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 1.8V, in the small SC89-6L footprint. It can be used as load

SC89-6L

Abstract: marking 6l marking BO sc89 SOT-666 transistor marking ac AC marking
Contextual Info: Device Orientation Vishay Siliconix Device Orientation SC89-6L SOT-666 DEVICE ORIENTATION AC * Package Method SC89-6L (SOT-666) T1 AC AC AC AC AC AC A User Direction of Feed * There is no Pin 1 mark on the units. Pin 1 is located in the lower left corner with respect to the marking orientation as shown.

40728

Abstract: Siliconix SC89 SC89-3L
Contextual Info: Tape Information Vishay Siliconix Ĭ1.50"0.10 4.00"0.10 2.00"0.05 3.50 " 0.05 8.00 +0.20/−0.10 1.75 " 0.10 SC89_3L 4.00"0.10 Ĭ0.40"0.10 NOTES: 1. Mat’l: P.C Conductive 2. Surface Resistivity: Max 105 Ω/Sq 3. Color: Black QUANTITY PER REEL 3,000 ECN: S-40728−Rev. F, 17-May-04

Contextual Info: Specification Comparison www.vishay.com Vishay Siliconix Si1013CX vs. Si1013X Description: Package: Pin Out: P-Channel, 20 V D-S MOSFET SC89-3 Identical Part Number Replacements: Si1013CX-T1-GE3 replaces Si1013X-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

SC89-6/SOT563/SOT666

Contextual Info: UESD6V8L5B Low Capacitance 5 Line ESD Protection Diode Array UESD6V8L5B SC89-6 / SOT563 / SOT666 General Description The UESD6V8L5B of TVS array is designed to protect sensitive electronics from damage or latch-up due to ESD, for use in applications where board space is at a premium, It is unidirectional device and

Contextual Info: UESD56B 5 Line ESD Protection Diode Array UESD56B SC89-6 / SOT563 / SOT666 General Description The UESD56B of TVS diode array is designed to protect sensitive electronics from damage or latch-up due to ESD, for use in applications where board space is at a premium. It is unidirectional

Contextual Info: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Anode L1SS360TT1G Features • We declare that the material of product compliance with RoHS requirements. 3 ORDERING INFORMATION Device PACKAGE Shipping 2 L1SS360TT1G SC89 3000 Tape & Reel L1SS360TT1G SC89

Contextual Info: Tape Information www.vishay.com Vishay Siliconix Carrier Tape SC89-3L Version A0 B0 K0 A1 B1 - 2 SIM only 1.85 ± 0.05 1.85 ± 0.05 0.88 ± 0.05 0.54 ± 0.05 1.4 + 0.1 Notes (1) 10 sprocket hole pitch cumulative tolerance ± 0.2 mm. (2) Camber not to exceed 1 mm in 100 mm, also cannot to exceed to 1 cm in 1 m actually.

Contextual Info: AO5803 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5803 uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 1.8V, in the small SC89-6L footprint. It can be used as load

Contextual Info: AO5800 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5800 uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 4.5V, in the small SC89-6L footprint. It can be used for a wide