Si4662DY
Abstract: No abstract text available
Text: New Product Si4662DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.010 at VGS = 10 V 18.6 0.014 at VGS = 4.5 V 15.7 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) 11 nC RoHS APPLICATIONS
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Si4662DY
Si4662DY-T1-E3
08-Apr-05
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195d SPRAGUE
Abstract: 195D
Text: 195D Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT Conformal Coated FEATURES • 8 mm, 12 mm Tape Packaging to EIA-481-1 reeling per IEC 286-3. 7’ 178 mm standard 13" (330 mm) available Pb-free Available RoHS* • US and European case sizes available
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EIA-481-1
08-Apr-05
195d SPRAGUE
195D
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592D228X6R3X220H
Abstract: 592D
Text: 592D Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT , Low Profile, Conformal Coated, Maximum CV FEATURES • New robust 6.3 V ratings for battery operated wireless applications • 1.0 mm to 2.5 mm height Pb-free Available RoHS* • Terminations: Lead Pb -free (2) standard
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EIA-481-1
535BAAC
08-Apr-05
592D228X6R3X220H
592D
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B 503 Potentiometers
Abstract: potentiometer Sfernice
Text: P10 Vishay Sfernice 3/8" Square Potentiometers Cermet Fully Sealed FEATURES • Industrial Grade RoHS • 0.5 W at 70 °C COMPLIANT • Miniature compact • Plastic housing and shaft • Fully sealed P10 panel potentiometer combines the very good setting
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P10XX
08-Apr-05
B 503 Potentiometers
potentiometer Sfernice
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JESD22-B102D
Abstract: J-STD-002B
Text: UG4A thru UG4D Vishay General Semiconductor Miniature Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ultrafast reverse recovery time • Low forward voltage drop • Low switching losses, high efficiency • High forward surge capability
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DO-201AD
2002/95/EC
2002/96/EC
08-Apr-05
JESD22-B102D
J-STD-002B
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68B50
Abstract: No abstract text available
Text: New Product SUU/SUD50N04-16P Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a, c 0.016 at VGS = 10 V 20 0.018 at VGS = 4.5 V 20 VDS (V) 40 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested
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SUU/SUD50N04-16P
O-251
O-252
SUD50N04-16P-E3
SUU50N04-16P-E3
08-Apr-05
68B50
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Untitled
Abstract: No abstract text available
Text: SiP4612A/B Vishay Siliconix Protected 1-A High-Side Load Switch DESCRIPTION FEATURES SiP4612A/B is a protected highside power switch. It is designed to operate from voltages ranging from 2.4 V to 5.5 V and handle a continuous current of 1 A. The user settable current limit protects the input supply voltage from
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SiP4612A/B
TSC75-6
08-Apr-05
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Marking 7133-1
Abstract: Si3424BDV-T1-E3 7133-1
Text: New Product Si3424BDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.028 at VGS = 10 V 8a 0.038 at VGS = 4.5 V 7 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) 6.2 RoHS APPLICATIONS COMPLIANT
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Si3424BDV
Si3424BDV-T1-E3
08-Apr-05
Marking 7133-1
7133-1
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Untitled
Abstract: No abstract text available
Text: BAS170WS-V Vishay Semiconductors Small Signal Schottky Diode Features • • • • • • Schottky diode for high-speed switching Circuit protection e3 Voltage clamping High-level detecting and mixing Lead Pb -free component Component in accordance to RoHS 2002/95/EC
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BAS170WS-V
2002/95/EC
2002/96/EC
OD323
GS18/10
GS08/3
BAS170WS-V-GS18
BAS170WS-V-GS08
08-Apr-05
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JESD22-B102D
Abstract: J-STD-002B UG06A UG06B UG06C UG06D
Text: UG06A thru UG06D Vishay General Semiconductor Miniature Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ultrafast reverse recovery time • Soft recovery characteristics • Low forward voltage drop • Low switching losses, high efficiency
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UG06A
UG06D
MPG06
2002/95/EC
2002/96/EC
08-Apr-05
JESD22-B102D
J-STD-002B
UG06B
UG06C
UG06D
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MARKING CODE R1C
Abstract: SiP42104 SC89-6L SC89 h-bridge circuit diagram SiP42104DX-T1-E3b hbridge driver vishay
Text: SiP42104 Vishay Siliconix H-Bridge Driver and Pulse width Controller for Digital Camera Micro Modules DESCRIPTION FEATURES SiP42104 is an integrated H-Bridge solenoid driver and programmable output pulse width controller IC intended for digital camera micro module focus mode applications. The
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SiP42104
SC89-6L
OT666.
08-Apr-05
MARKING CODE R1C
SC89
h-bridge circuit diagram
SiP42104DX-T1-E3b
hbridge driver vishay
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ua712
Abstract: Si5915BDC
Text: New Product Si5915BDC Vishay Siliconix Dual P-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A) 0.070 at VGS = - 4.5 V 4a 0.086 at VGS = - 2.5 V 4a 0.145 at VGS = - 1.8 V 3.6 Qg (Typ) • TrenchFET Power MOSFET • Low Thermal Resistance
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Si5915BDC
Si5915BDC-T1-E3
18-Jul-08
ua712
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B 103 Potentiometers
Abstract: 500R
Text: 248, 249 Vishay Spectrol 1/2" 12.7 mm Conductive Plastic & Cermet Potentiometers FEATURES • Model 248/249 retains the proven high performance characteristics in a more cost effective package RoHS COMPLIANT • Cost effective panel potentiometers • P.C.B. mounting potentiometers
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18-Jul-08
B 103 Potentiometers
500R
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597D687X
Abstract: 597D 597D108X 597D336X 597D227X
Text: 597D Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT , Ultra-Low ESR, Conformal Coated, Maximum CV FEATURES • New case size offerings • Case profiles: E case 4 mm and R case (3.6 mm) Pb-free Available RoHS* • Low profile case: V case (2 mm)
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08-Apr-05
597D687X
597D
597D108X
597D336X
597D227X
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Untitled
Abstract: No abstract text available
Text: New Product Si7848BDP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)f 0.009 at VGS = 10 V 47 0.012 at VGS = 4.5 V 40 VDS (V) 40 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) COMPLIANT 15 nC APPLICATIONS
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Si7848BDP
Si7848BDP-T1-E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: New Product SUU/SUD50N04-08P Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.008 at VGS = 10 V 20 0.010 at VGS = 4.5 V 20 VDS (V) 40 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS
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SUU/SUD50N04-08P
O-251
O-252
SUD50N04-08P-E3
SUU50N04-08P-E3
08-Apr-05
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61209
Abstract: ptc application note PTCTT95R100GTE
Text: 2381 673./PTCTT.R.TE Vishay BCcomponents TWIN Vertical Surface Mount PTC Thermistors for Overload Protection FEATURES • Very small footprint, allowing to increase the number of lines per PCB • Matched pairs in one component, significantly reducing the
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18-Jul-08
61209
ptc application note
PTCTT95R100GTE
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Untitled
Abstract: No abstract text available
Text: New Product SiA917DJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 4.5a 0.185 at VGS = - 2.5 V - 4.5a • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
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SiA917DJ
SC-70-6
SiA917DJ-T1-E3
08-Apr-05
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OZ 9910 a
Abstract: vishay spectrol 534 spectrol 534 32UNEF 500R BO10 spectrol model 534
Text: Model 533, 534, 535 Vishay Spectrol 7/8" 22 mm Multiturn Wirewound 533: 3 Turns/534: 10 Turns/535: 5 Turns FEATURES • • • • • • • Note • The color of this product may either be black (US market) or Blue (other regions) Bushing and servo mount designs available
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Turns/534:
Turns/535:
08-Apr-05
OZ 9910 a
vishay spectrol 534
spectrol 534
32UNEF
500R
BO10
spectrol model 534
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Untitled
Abstract: No abstract text available
Text: 20CTQ.PbF Series Vishay High Power Products Schottky Rectifier, 20 A FEATURES • 175 °C TJ operation Pb-free • Center tap TO-220 package • Low forward voltage drop • High frequency operation Base 2 common cathode Available RoHS* COMPLIANT • High purity, high temperature epoxy
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20CTQ.
O-220
O-220AB
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. WD COPYRIGHT - 6 7 8 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 4 2 3 - LOC ALL RIGHTS RESERVED. AD REVISIONS DIST 00 P LTR B DESCRIPTION DATE DWN 02JUL07 E C O —0 7 —0 0 9 0 8 APVD MB MS TERMINAL NUMBER SPECIFICATIONS
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02JUL07
50MILLIAMPS@
10MICROAMPS
26JAN06
31MAR2000
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 R ELEASED FO R ALL C O P Y R IG H T BY TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S - 2 , - RESERVED. C O R P O R A T IO N . LOC D IS T AD 00 REVISIO NS D E S C R IP T IO N F ECO —07- 02JUL07
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02JUL07
10MICR0AMPS@
250VAC
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Untitled
Abstract: No abstract text available
Text: 3 4 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T BY TYCO E L E C T R O N IC S 2 P U B L IC A T IO N R IG H T S RESERVED. C O R P O R A T IO N . LOC D IS T AD 00 REVISIO N S P LTR E 12.00 [.472] D 7 0 4 .0 0 [0.157] NOTE: TERMINAL NUMBERS ARE
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02JUL07
UL94HB,
FSM102
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T BY TYCO 2 3 E L E C T R O N IC S P U B L IC A T IO N R IG H T S - , - RESERVED. C O R P O R A T IO N . LOC D IS T AD 00 REVISIO NS D E S C R IP T IO N H 0 1 .3 0 3 . 0 0 D EEP
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02JUL07
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