SI3424BDV Search Results

Marking 7133-1

Abstract: Si3424BDV-T1-E3 7133-1
Contextual Info: New Product Si3424BDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.028 at VGS = 10 V 8a 0.038 at VGS = 4.5 V 7 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) 6.2 RoHS APPLICATIONS COMPLIANT

Si3424BDV-T1-E3

Contextual Info: New Product Si3424BDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.028 at VGS = 10 V 8a 0.038 at VGS = 4.5 V 7 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) 6.2 RoHS APPLICATIONS COMPLIANT

Contextual Info: Specification Comparison Vishay Siliconix Si3424CDV vs. Si3424BDV Description: Package: Pin Out: N-Channel, 30 V D-S MOSFET TSOP-6 Identical Part Number Replacements: Si3424CDV-T1-GE3 Replaces Si3424BDV-T1-E3 Si3424CDV-T1-GE3 Replaces Si3424BDV-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Contextual Info: Si3424BDV Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.028 at VGS = 10 V 8a 0.038 at VGS = 4.5 V 7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

Si3424DV

Abstract: Si3424BDV Si3424BDV-T1-E3 Si3424DV-T1 Si3424DV-T1-E3
Contextual Info: Specification Comparison Vishay Siliconix Si3424BDV vs. Si3424DV Description: Package: Pin Out: N-Channel 30-V D-S MOSFET TSOP-6 Identical Part Number Replacements Si3424BDV-T1-E3 Replaces Si3424DV-T1-E3 Si3424BDV-T1-E3 Replaces Si3424DV-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Si3424BDV-T1-E3

Abstract: Si3424BDV-T1-GE3
Contextual Info: Si3424BDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.028 at VGS = 10 V 8a 0.038 at VGS = 4.5 V 7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

Si3424BDV-T1-E3

Abstract: Si3424BDV-T1-GE3
Contextual Info: Si3424BDV Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.028 at VGS = 10 V 8a 0.038 at VGS = 4.5 V 7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

Contextual Info: Si3424BDV Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.028 at VGS = 10 V 8 0.038 at VGS = 4.5 V 7 • TrenchFET Power MOSFET • 100 % Rg Tested • Material categorization: For definitions of compliance please see

Contextual Info: SPICE Device Model Si3424BDV Vishay Siliconix N-Channel 30V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si3424BDV-T1-E3

Contextual Info: New Product Si3424BDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.028 at VGS = 10 V 8a 0.038 at VGS = 4.5 V 7 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) 6.2 RoHS APPLICATIONS COMPLIANT

Contextual Info: Si3424BDV Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.028 at VGS = 10 V 8a 0.038 at VGS = 4.5 V 7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

spice datasheet 7806

Abstract: AN609 68301
Contextual Info: Si3424BDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

S101

Abstract: SI3424B tsop-6 marking ag 74623
Contextual Info: Si3424BDV Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.028 at VGS = 10 V 8a 0.038 at VGS = 4.5 V 7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

S-71494

Contextual Info: SPICE Device Model Si3424BDV Vishay Siliconix N-Channel 30V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

ALC889DSD

Abstract: WPCE775L SL28648BLC transistor c4544 NS682403P wpce775 c2097 transistor transistor C4770 UPEK transistor C4046
Contextual Info: 5 4 3 2 1 Schematics Page Index Title / Revision / Change Date D C B Page 01 02 03 04 05 06 07 08 09 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 Rev. Title of Schematics Page Index page BLOCK DIAGRAM CLOCK GEN (SL28648BLC)

BSS138 NXP

Abstract: FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250
Contextual Info: NXP small-signal N- and P-channel MOSFETs Small-signal MOSFETs optimized for a broad range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today’s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety

Contextual Info: Preliminary Technical Data ADP1829 Reference Design FCDC 00062 FEATURES Five Output Voltages: 1.0V, 1.8V, 3.3V x 2, 5V Output Current: 0.7A to 2.8A Input voltage: 9-12V Ripple 2% ppk of Output Voltage Transient step ±5%, 50% max load ADP1829 REFERENCE DESIGN DESCRIPTION

Diode SOT-23 marking 15d

Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs

gs 069

Abstract: PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04
Contextual Info: N-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no