02P MARKING Search Results

LRC02P

Abstract: Phycomp 2350 yageo Phycomp 2350 1206 iec 60068 2 29 LRC01P
Contextual Info: DATA SHEET LOW-OHMIC POWER CHIP RESISTORS LRC01P/02P 5%; 1%, 0.5W Product Specification – Jul 29, 2003 V.0 size 1206 Phycomp Product specification Low-ohmic power chip resistors size 1206 LRC01P/02P 5%; 1%, 0.5W FEATURES • Reduced size of final equipment

Philips MARKING CODE

Abstract: sot23 02p 2N7002 MARKING 702 sot23 marking code m8p BSS84 MARKING CODE BSN20 MARKING marking pKX sot23 marking M8p 2N7002 PHILIPS SOT323 702 sot23
Contextual Info: Philips Semiconductors PowerMOS transistors Marking codes Types in SOT23, SOT89, and SOT323 packages are marked with a code as listed in the following table. TYPE NUMBER MARKING CODE BSN20 BSN20W M8p M8t BSS84 SP BSS87 BSS123 BSS192 KA SA BST80 BST82 KM 02p

ZY180L

Abstract: 1600 v mosfet
Contextual Info: VMO 1600-02P PolarHTTM Module VDSS = 200 V ID80 = 1600 A RDS on = 1.7 mW max. N-Channel Enhancement Mode Preliminary data D S G KS KS G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 200 V ± 20 V ID25 ID80 TC = 25°C TC = 80°C

Contextual Info: VMO 1600-02P PolarHTTM Module VDSS = 200 V ID80 = 1600 A RDS on = 1.7 mΩ max. N-Channel Enhancement Mode D S G KS D KS G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 200 V ± 20 V ID25 ID80 TC = 25°C TC = 80°C 1900

ZY180L

Abstract: VMO 1600-02P 1600-02P
Contextual Info: VMO 1600-02P PolarHTTM Module VDSS = 200 V ID80 = 1600 A RDS on = 1.7 mW max. N-Channel Enhancement Mode D S G KS KS G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 200 V ± 20 V ID25 ID80 TC = 25°C TC = 80°C 1900 1600

1600-02P

Abstract: 1600 v mosfet VMO 1600-02P
Contextual Info: VMO 1600-02P PolarHTTM Module VDSS = 200 V ID80 = 1600 A RDS on = 1.7 mW max. N-Channel Enhancement Mode D S G KS KS G S Features MOSFET Conditions Maximum Ratings VDSS TVJ = 25°C to 150°C 200 V ± 20 V 1900 1600 A A ID25 ID80 TC = 25°C TC = 80°C IF25

2N7002 MARKING 702

Abstract: 2n7002 MARKING 2N7002 PHILIPS MARKING BSS84 MARKING CODE marking 702 sot23 Philips MARKING CODE BSN20 MARKING sot23 02p PMBF170 pkx codes marking 2N7002
Contextual Info: Philips Semiconductors PowerMOS transistors Marking codes Types in SOT23, SOT89, and SOT323 packages are marked with a code as listed in the following table. TYPE NUMBER MARKING CODE BSN20 M8p BSN20W M8t BSS84 SP BSS87 KA BSS123 SA BSS192 KB BST80 KM BST82

2N7002 PHILIPS MARKING

Abstract: 2N7002 MARKING 702 Marking codes 2N7002 2n7002 MARKING Type Transistors 702 codes marking 2N7002 sot23 02p marking 702 sot23 BSN20 MARKING
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Marking codes PowerMOS transistors 1998 Apr 10 File under Discrete Semiconductors, SC13 Philips Semiconductors PowerMOS transistors Marking codes Types in SOT23, SOT89, and SOT323 packages are marked with a code as listed in the following table.

sot23 marking M6p

Abstract: PMBFJ111 PMBFJ174
Contextual Info: Philips Semiconductors Marking codes Small-signal Field-effect Transistors Types in SOT23, SOT89, SOT143 and SOT343 envelopes are marked with a code as listed in the following tables. TYPE NUM BER M A R K IN G CODE M A R K IN G TYPE NUMBER CODE TYPE NUM BER

AXICOM IM03

Abstract: AXICOM IM06 AXICOM IM02 axicom im07 AXICOM im41 AXICOM im42 axicom im01 IMC03 IM03D IM48I
Contextual Info: THIS DRAWING IS A CONTROLLED DOCUMENT FOR TYCO ELECTRONICS CORPORATION IT IS SUBJECT TO CHANGE AND THE CONTROLLING ENGINEERING ORGANIZATION SHOULD BE CONTACTED FOR THE LATEST REVISION. LOC REVISIONS DIST HJ - P LTR B9 B10 B11 B12 DESCRIPTION DATE New IM48GR

7168-m

Abstract: IM06D IM48I IM03D IMB03C IMC06C IM03P IMF61 IME06 IM42P
Contextual Info: THIS DRAWING IS A CONTROLLED DOCUMENT FOR TYCO ELECTRONICS CORPORATION IT IS SUBJECT TO CHANGE AND THE CONTROLLING ENGINEERING ORGANIZATION SHOULD BE CONTACTED FOR THE LATEST REVISION. LOC REVISIONS DIST HJ - P LTR B9 B10 B11 B12 DESCRIPTION DATE New IM48GR

PXTA14

Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
Contextual Info: Philips Semiconductors Surface Mounted Semiconductors Marking MARKING LIST Types in SOT23, SOT89, SOT143, SOT323, SOD123 and SOD323 envelopes are marked with a code as listed in the following tables. The actual type number and data code are on the packing.

02p SMD TRANSISTOR

Contextual Info: • bbS3131 002315=1 56H « A P X N AUER PHILIPS/DISCRETE BST82 b7E D y v . N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT23 envelope and designed for use as Surface Mounted Device SMD in thin and thick-film circuits for telephone ringer and for application

02p SMD TRANSISTOR

Abstract: BST82 BST82 SMD SMD TRANSISTOR MARKING DM sot23 02p
Contextual Info: BST82 A _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT23 envelope and designed fo r use as Surface Mounted Device SMD in thin and thick-film circuits fo r telephone ringer and for application

KBPC40

Abstract: KBPC50 50p bridge rectifier
Contextual Info: KBPC40, 50P/W SERIES W TE PO WE R SEM IC O ND UC TO R S 40, 50A HIGH CURRENT BRIDGE RECTIFIER Features ! Diffused Junction A ! ! ! Low Reverse Leakage Current Low Power Loss, High Efficiency Electrically Isolated Epoxy Case for Maximum Heat Dissipation Case to Terminal Isolation Voltage 2500V

Contextual Info: WTE POWER SEMICONDUCTORS KBPC15, 25, 35P/W SERIES 15, 25, 35A HIGH CURRENT BRIDGE RECTIFIER Features ! Diffused Junction A A ! ! ! Low Reverse Leakage Current C Low Power Loss, High Efficiency Electrically Isolated Epoxy Case for ~ Maximum Heat Dissipation

02p marking

Contextual Info: KBPC40P SERIES 40A SINGLE PHASE BRIDGE RECTIFIER WON-TOP ELECTRONICS Pb Features  Diffused Junction A    Low Reverse Leakage Current Low Power Loss, High Efficiency Heatsink Integrated Epoxy Case for Maximum Heat Dissipation Low Thermal Resistance

Contextual Info: KBPC40P SERIES WTE POWER SEMICONDUCTORS Pb 40A HIGH CURRENT SINGLE-PHASE BRIDGE RECTIFIER Features  Diffused Junction A    Low Reverse Leakage Current Low Power Loss, High Efficiency Electrically Isolated Epoxy Case for ~ Maximum Heat Dissipation D  Case to Terminal Isolation Voltage 2500V

Contextual Info: KBPC50P SERIES WTE POWER SEMICONDUCTORS Pb 50A HIGH CURRENT SINGLE-PHASE BRIDGE RECTIFIER Features  Diffused Junction A    Low Reverse Leakage Current Low Power Loss, High Efficiency Electrically Isolated Epoxy Case for ~ Maximum Heat Dissipation D  Case to Terminal Isolation Voltage 2500V

kbpc

Abstract: KBPC15 KBPC1500P KBPC1500PW KBPC1501P KBPC1501PW KBPC1502P KBPC1502PW KBPC1504P KBPC15P
Contextual Info: KBPC15P SERIES WTE POWER SEMICONDUCTORS Pb 15A SINGLE-PHASE BRIDGE RECTIFIER Features ! Diffused Junction A ! ! ! Low Reverse Leakage Current Low Power Loss, High Efficiency Electrically Isolated Epoxy Case for ~ Maximum Heat Dissipation D ! Case to Terminal Isolation Voltage 2500V

KBPC1000P

Contextual Info: KBPC10P SERIES WTE POWER SEMICONDUCTORS Pb 10A SINGLE-PHASE BRIDGE RECTIFIER Features  Diffused Junction A    Low Reverse Leakage Current Low Power Loss, High Efficiency Electrically Isolated Epoxy Case for ~ Maximum Heat Dissipation D  Case to Terminal Isolation Voltage 2500V

KBPC2508PW

Abstract: KBPC25 KBPC2500P KBPC2500PW KBPC2501P KBPC2501PW KBPC2502P KBPC2502PW KBPC2504P KBPC25P
Contextual Info: KBPC25P SERIES WTE POWER SEMICONDUCTORS Pb 25A SINGLE-PHASE BRIDGE RECTIFIER Features ! Diffused Junction A ! ! ! Low Reverse Leakage Current Low Power Loss, High Efficiency Electrically Isolated Epoxy Case for ~ Maximum Heat Dissipation D ! Case to Terminal Isolation Voltage 2500V

Contextual Info: KBPC50P SERIES 50A SINGLE PHASE BRIDGE RECTIFIER WON-TOP ELECTRONICS Pb Features  Diffused Junction A    Low Reverse Leakage Current Low Power Loss, High Efficiency Heatsink Integrated Epoxy Case for Maximum Heat Dissipation Low Thermal Resistance

Contextual Info: KBPC35P SERIES 35A SINGLE PHASE BRIDGE RECTIFIER WON-TOP ELECTRONICS Pb Features  Diffused Junction A    Low Reverse Leakage Current Low Power Loss, High Efficiency Heatsink Integrated Epoxy Case for Maximum Heat Dissipation Low Thermal Resistance