BSN20 Search Results

XC6206MR

Contextual Info: 1 2 3 4 5 6 A A XC6206MR VOUT 2 1uF 3.3V GND C2 C1 1uF 1 VIN C3 100nF VSS U3 3 5V 稳压电路 B SCL SDA 5V GND 10K 10K R4 R3 5V SDA Q1 BSN20 3.3V Grove SCL Q2 BSN20 3.3V GND 10K T_SDA R2 R1 10K 3.3V B 1J1 2 3 4 1U1 VDD TSL2561 SDA 6 T_SDA 2 ADDR INT 5 3 GND SCL 4 T_SCL

BbN20

Abstract: MSB003 BSN20
Contextual Info: • Philips Semiconductors — bbS3T31 a0237t,S Tib ■ N AUER P H I L I P S / D I S C R E T E APX _ „ Product specification b7E D N-channel enhancement mode vertical D-MOS transistor FEATURES BSN20 QUICK REFERENCE DATA • Direct interface to C-MOS, TTL,

transistor w 431

Abstract: tL 431 transistor BSN204 transistor tl 431 BSN204A
Contextual Info: Philips Components BSN204/BSN204A Data «heat status Product specification date of issus December 1990 FEATURES N-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown.

BSN205

Abstract: BSN205A
Contextual Info: BSN205 BSN205A N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope. Designed prim arily as a line current interrupter in telephone sets, it can also be applied in other applications

TRANSISTOR SMD MARKING CODE dk

Abstract: BSN20 marking M8p TRANSISTOR BSN20 BSN20 MARKING SMD TRANSISTOR MARKING code DD m8p smd TRANSISTOR SMD MARKING CODE SP TRANSISTOR SMD CODE PACKAGE SOT23 501 sot23 marking code m8p
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSN20 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC13b 1997 Jun 18 Philips Semiconductors Product specification N-channel enhancement mode

BSN20 MARKING

Abstract: BSN20 SOT-23 016
Contextual Info: BSN20 N-Channel Enhancement-Mode MOSFET TO-236AB SOT-23 .016 (0.4) .056 (1.43) .052 (1.33) 3 .016 (0.4) Pin Configuration .007 (0.175) .005 (0.125) max. .004 (0.1) .037(0.95) .037(0.95) .016 (0.4) 0.035 (0.9) 0.079 (2.0) 1. Gate 2. Source 3. Drain 2 0.031 (0.8)

BSN20 MARKING

Abstract: BSN20
Contextual Info: G en era l \J S e m i c o n d u c t o r _ BSN20 N-Channel Enhancement-Mode MOSFET % Vds 5 0 V RdS ON 6 f i Id 1 8 0 m A TO-236AB (SOT-23) •122(3.1) .110(2.8) 0.031 (0.8) .016 (0.4) T o p V ie w R+ 1— co m 0 035 (0.9) CO in m o o Pin Configuration

smd transistor ds 65

Abstract: BSN20 transistor SMD QQ smd transistor 142
Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSN20 FEATURES PINNING - SOT23 • Direct interface to C-MOS, TTL, etc. PIN SYMBOL DESCRIPTION a gate 2 s source 3 d drain • High-speed switching 1 • No secondary breakdown.

Contextual Info: BSN205 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)300m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)

Contextual Info: btS3T31 00237t,S Tib • APX N AUER PHILIPS/DISCRETE b7E D« N-channel enhancement mode vertical D>MOS transistor Philips Semiconductors FEATURES Product specification BSN20 QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching

Contextual Info: _ BSN205 BSN205A JV N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope. Designed primarily as a line current interrupter in telephone sets, it can also be applied in other applications

Contextual Info: Small-Signal DMOS Transistors Package Leaded VDSS Volt TO-92 TO-92 N-Channel P-Channel 50 60 240 BS250 2N7000 Surface Mount SOT-23 SOT-23 ID mA RDS(ON) (Ω) @ VGS /ID BSN20 + 100 15 10V / 100mA 2N7002 250 3 10V / 500mA 250 5 10V / 200mA 300 5 10V / 500mA

BSN20

Abstract: HZG303
Contextual Info: BSN20 N-channel enhancement mode field-effect transistor Rev. 03 — 26 June 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSN20 in SOT23.

BSN20 MARKING

Abstract: BSN20 equivalent bsn20
Contextual Info: BSN20 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 1.8Ω @ VGS = 10V 500mA 2.0Ω @ VGS = 4.5V 450mA V(BR)DSS • • • • • • • Mechanical Data Description and Applications • • This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

Contextual Info: BSN204A Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)250m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)1.0 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)

Contextual Info: BSN20 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V) I(D) Max. (A)100m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC)

Contextual Info: SO T2 3 BSN20BK 60 V, N-channel Trench MOSFET 18 December 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

smd transistor marking 2y

Abstract: m8p smd smd transistor 2y ti m8p smd transistor marking m8p TRANSISTOR SMD 2y smd transistor m8 sot23 marking code m8p transistor marking 2y marking M8p
Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSN20 FEATURES PINNING - SOT23 • Direct interface to C-MOS, TTL, etc. PIN SYMBOL DESCRIPTION • High-speed switching 1 g gate • No secondary breakdown. 2

BSN20 equivalent

Contextual Info: BSN20 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 1.8Ω @ VGS = 10V 500mA 2.0Ω @ VGS = 4.5V 450mA V(BR)DSS • • • • • • • Mechanical Data Description and Applications • • This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSN20 FOR MORE DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc.

Contextual Info: BSN20 Green N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits RDS ON ID TA = +25°C 1.8Ω @ VGS = 10V 500mA 2.0Ω @ VGS = 4.5V 450mA V(BR)DSS • • • • • • • • Description Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

Contextual Info: BSN205A Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)300m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)

BSN20

Contextual Info: BSN20 N-channel enhancement mode field-effect transistor Rev. 03 — 26 June 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSN20 in SOT23.

bsn20

Abstract: BSN20 MARKING
Contextual Info: BSN20 Vishay Semiconductors New Product formerly General Semiconductor N-Channel Enhancement-Mode MOSFET VDS 50V RDS ON 6Ω ID 180mA H C EN ET R T ENF TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View G .056 (1.43) .052 (1.33) 3 .016 (0.4) 0.079 (2.0)