03MAR2005 Search Results

Contextual Info: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 4 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. L0C ALL RIGHTS RESERVED. AA MECHANICAL: DIST R E VIS IO N S 22 LTR DESCRIPTION A .850 — 03M A R 2005 LV DF/CG - S H I E L D - .010" T H I C K , C 2 6 8 0 0 B R A S S P R E P L A T E D W I T H 3 0 j i INCH MI N S E M I - B R I G H T

proner comatel

Abstract: PRONER comatel SAC300
Contextual Info: 2 6 THIS M DRAWING IS U N P U 8 1 1S H E 0. BY C O PY RI G HT 2004 RELEASED TYCO ELECTRON I C S CORPORATION. AL L toc 2004 FOR P U 0 L ICA TION DIST REV I S IONS 00 R [ GHTS R E S E R V E D . LTR O D a t e u r Annue I - M e n s u e FIRST M O N T A GE DE C O N T R O L E

mag45

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 4 5 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. L0C ALL RIGHTS RESERVED. AA DIST R E VIS IO N S 22 LTR DESCRIPTION A .850 REV PER EC 0 S 1 3 - 0 6 4 4 - 0 4 DATE DWN APVD 03M A R 2005 LV DF MAX

linear Regulated Power Supply Schematic Diagram for constant 5V and 1.5A

Abstract: st1s
Contextual Info: ST1S03 1.5A, 1.5 MHZ ADJUSTABLE, STEP-DOWN SWITCHING REGULATOR IN DFN6 AND SO-8 • ■ ■ ■ ■ ■ ■ ■ ■ STEP-DOWN CURRENT MODE PWM 1.5MHz DC-DC CONVERTER 2% DC OUTPUT VOLTAGE TOLERANCE INTERNAL SOFT START FOR START-UP CURRENT LIMITIATION AND POWER ON

F8NK85Z

Abstract: P8NK85Z F8NK85 STP8NK85Z F8NK8 p8nk
Contextual Info: STP8NK85Z STF8NK85Z N-CHANNEL 850V -1.1Ω - 6.7A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE STP8NK85Z STF8NK85Z • ■ ■ ■ ■ ■ ■ VDSS RDS on ID Pw 850 V 850 V <1.4 Ω <1.4 Ω 6.7A 6.7A 150 W

D16NF06L

Abstract: JESD97 STD16NF06L STD16NF06L-1 STD16NF06LT4
Contextual Info: STD16NF06L STD16NF06L-1 N-channel 60V - 0.060Ω - 24A - DPAK/IPAK STripFET II Power MOSFET General features Type VDSS RDS on ID STD16NF06L-1 60V <0.070Ω 24A STD16NF06L 60V <0.070Ω 24A • Logic level device ■ Low threshold drive 3 3 2 1 iPAK 1 DPAK

la 7913

Abstract: JESD97 M58BW016D M58BW016DB M58BW016DT PQFP80 00005H
Contextual Info: M58BW016DB M58BW016DT 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (optional)

Q002

Abstract: JESD97 M58BW016D M58BW016DB M58BW016DT PQFP80 13-May-2003 tbhk M58BW016DB7 8835h
Contextual Info: M58BW016DB M58BW016DT 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. .850 MAX MECHANICAL: 2 i O ,625 00 .645 Ö LT ) Í3 § D \ .105 .545 600 MAX pn 30 RJ —1 R J- 8 u VJ 10 .425 C 0.O 62(2X) .660

Contextual Info: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512Kb x32, Boot Block, Burst 3V supply Flash memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)

Contextual Info: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512Kb x32, Boot Block, Burst 3V supply Flash memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)

k1 522

Abstract: VFBGA EIA-481-B 07JAN200 pd0002
Contextual Info: PD0002 Packing information Chip scale packages for memory products tape and reel shipping media Introduction Surface mounting packages can be supplied with tape and reel packing. The reels are standard 330 mm 13” diameter, 180 mm (7”) for very small packages, and

JESD97

Abstract: ST1S03 ST1S03PU ST1S03PUR
Contextual Info: ST1S03 1.5 A, 1.5 MHz adjustable, step-down switching regulator Features • Step-down current mode PWM 1.5 MHz DC-DC converter ■ 2 % DC output voltage tolerance ■ Internal soft start for START-UP current limitation and power on delay of 50-100 µs ■

MAGNETIC s

Contextual Info: 7 TH IS DRAWING IS U N P U B LIS H E D . RELEASED ALL COPYRIGHT FOR PUBLICATION RIGHTS 6 5 - RESERVED. BY TYCO ELECTRONICS CORPORATION. MECHANICAL: .625 D .080 - C .130 0.O62 2X 0.126(2X) + .015 .660 - . 0 0 0 i ELECTRICAL: 7G02 SERIES MAGNETIC CIRCUIT

Contextual Info: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kbit x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for program, erase and read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for fast program (optional)

Contextual Info: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kb x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for Program, Erase and Read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for Fast Program (optional)

Contextual Info: ST1S03 1.5A, 1.5 MHz adjustable, step-down switching regulator in DFN6 Features • Step-down current mode PWM 1.5MHz DC-DC converter ■ 2% DC output voltage tolerance ■ Internal soft start for START-UP current limitation and power on delay of 50-100µs

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 20 LOC BY - BASE REVISIONS DIST HM ALL RIGHTS RESERVED. 1 #6-32 X 22.35[.88] SLOTTED/ PHILLIPS OVAL HEAD SCREW QUANTITY 4 00 P LTR DESCRIPTION DATE DWN APVD D REV ECO-10-011451

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 20 LOC BY - REVISIONS DIST HM ALL RIGHTS RESERVED. 1 00 P LTR BASE #6-32 X 22.35[.88] SLOTTED/ PHILLIPS OVAL HEAD SCREW QUANTITY 4 DESCRIPTION DATE DWN APVD D REV ECO-10-011451

F8NK85Z

Abstract: P8NK85Z sep 67a F8NK85
Contextual Info: STP8NK85Z STF8NK85Z N-CHANNEL 850V -1.1Ω - 6.7A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE STP8NK85Z STF8NK85Z • ■ ■ ■ ■ ■ ■ VDSS RDS on ID Pw 850 V 850 V <1.4 Ω <1.4 Ω 6.7A 6.7A

M58BW016

Contextual Info: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kbit x 32, boot block, burst 3 V supply Flash memories Features Supply voltage – VDD = 2.7 V to 3.6 V for program, erase and read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for fast program (optional)

linear Regulated Power Supply Schematic Diagram for constant 5V and 1.5A

Abstract: SISTEM CONTROL SMD Step-Down Voltage Regulator ST1S03PM Thermal Shut Down Functioned MOSFET ST1S03 ST1S03RPM DFN 3x3 dfn6
Contextual Info: ST1S03 1.5A, 1.5 MHZ ADJUSTABLE, STEP-DOWN SWITCHING REGULATOR IN DFN6 • ■ ■ ■ ■ ■ ■ ■ ■ STEP-DOWN CURRENT MODE PWM 1.5MHz DC-DC CONVERTER 2% DC OUTPUT VOLTAGE TOLERANCE INTERNAL SOFT START FOR START-UP CURRENT LIMITIATION AND POWER ON

F8NK85Z

Abstract: F8NK85
Contextual Info: STP8NK85Z STF8NK85Z N-CHANNEL 850V -1.1Ω - 8.6A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET TARGET SPECIFICATION Figure 1: Package Table 1: General Features TYPE STP8NK85Z STF8NK85Z • ■ ■ ■ ■ ■ ■ VDSS RDS on ID Pw 850 V 850 V <1.4 Ω

Q002

Abstract: M58BW016DB M58BW016DT M58BW016FB M58BW016FT PQFP80 56MHZ M58BW016
Contextual Info: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kb x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for Program, Erase and Read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for Fast Program (optional)