03MAY2011 Search Results

GIPS20K60

Abstract: STGIPS20K60 SDIP-25L TN0107
Contextual Info: STGIPS20K60 SLLIMM small low-loss intelligent molded module Features • IPM 18 A, 600 V 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes ■ Short-circuit rugged IGBTs ■ VCE sat negative temperature coefficient

Contextual Info: 818-AG11D-ESL-LF Product Details - TE Page 1 of 1 TE Connectivity My Cart | Have a Question? Japan Update Chat with a Product Information Specialist 818-AG11D-ESL-LF Product Details Share Product Highlights: TE Internal Number: 2-1571552-5 Submit Q Print Email

Contextual Info: STRH40P10 P-channel 100 V, 0.060 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened

transistor smd w16

Abstract: smd transistor w16 hall sensor marked w10
Contextual Info: UM0723 User manual 1 kW three-phase motor control demonstration board featuring L6390 drivers and STGP10NC60KD IGBT 1 Introduction This document describes the 1 kW three-phase motor control demonstration board featuring the L6390 high and low-side drivers and the STGP10NC60KD IGBT. The demonstration

Contextual Info: STGIPS20K60 SLLIMM small low-loss intelligent molded module IPM, 3-phase inverter - 18 A, 600 V short-circuit rugged IGBT Datasheet − production data Features • IPM 18 A, 600 V 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes

Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened

Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened

Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened

Contextual Info: STGIPS20K60 SLLIMM small low-loss intelligent molded module IPM, 3-phase inverter - 18 A, 600 V short-circuit rugged IGBT Datasheet − production data Features • IPM 18 A, 600 V 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes

strh40p10

Abstract: STRH40P10HYG MIL-STD-750E STRH40P10HY1 STRH40P10H
Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet — production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 3 1 2

Contextual Info: STB155N3H6 STD155N3H6 N-channel 30 V, 2.5 mΩ , 80 A, D²PAK, DPAK STripFET VI DeepGATE™ Power MOSFET Features Order codes VDSS RDS on max ID STB155N3H6 30 V < 3 mΩ 80 A (1) STD155N3H6 30 V < 3 mΩ 80 A (1) 1. Limited by wire bonding 3 3 1 1 • RDS(on) * Qg industry benchmark

Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite

Contextual Info: STGIPS20K60 SLLIMM small low-loss intelligent molded module IPM, 3-phase inverter - 18 A, 600 V short-circuit rugged IGBT Datasheet - production data Applications • 3-phase inverters for motor drives  Home appliances, such as washing machines, refrigerators, air conditioners and sewing

Contextual Info: THIS DRAWING IS COPYRIGHT UNPUBLISHED. RELEASED BY 20 TYCO ELECTRONICS CORPORATION FOR ALL 4X PUBLICATION INTERNATIONAL LOC RIGHTS RESERVED. REVISIONS DIST GP . HOLE DESCRIPTION DIAMETER DATE DWN REV PER ECO-1 0 - 0 216 2 7 24JAN2011 RG REV PER E C O - 1 1- 0 0 76 7 8

MAX7324

Abstract: maxim topmark codes
Contextual Info: 19-3806; Rev 1; 7/07 I2C Port Expander with 4 Push-Pull Outputs and 4 Open-Drain I/Os Features The MAX7323 2-wire serial-interfaced peripheral features eight I/O ports. Four ports are push-pull outputs and the other four are open-drain I/O ports that are overvoltage

DIN 16901-140

Abstract: 1355072 1-965641-3 1-967628-6 2-967630-1 1-967630-5 967632-1 967633-1 1-967627-1 1-967627-5
Contextual Info: THIS DRAWI NG IS UNPUBLISHED. RELEASED ALL C O P Y R I G H T 2011 F OR PUBLICATIO N RIGHTS 2011 MATED W I T H / p assend zu: SEE 1355071 and 1355073 RESERVED. 1 0 , 7g 42.8 6 42.5 21 P R O J E K T NR . A92-52228 REV I SI ONS DIST L OC A 0,7g 36 IS 25 57.8

Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite

horizontal trimmer

Contextual Info: Product Page 1 of 1 The Trimmer Capacitor Company Print Product: JN080 Product Line General Specifications Product Line Insulation Resistance Operating Temperature JN - Ceramic Trimmer 10⁴ megaohms -25°C to +85°C Min Capacitance 3 Max Capacitance 8 DC Working Voltage

GIPS20K60

Contextual Info: STGIPS20K60 SLLIMM small low-loss intelligent molded module IPM, 3-phase inverter - 18 A, 600 V short-circuit rugged IGBT Features • IPM 18 A, 600 V 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes ■ Short-circuit rugged IGBTs

strh40p10

Abstract: STRH40P10HYG
Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite

L6924D

Contextual Info: STEVAL-ISA076V1 Battery charger demonstration board with integrated power switch for Li-Ion/Li-Polymer batteries based on the L6924D Data brief Features • Operating input voltage up to 12 V ■ Fully integrated solution with power MOSFET, reverse blocking diode, sense resistor, and

Contextual Info: 2200 System Micro-Measurements Signal Conditioning Amplifier FEATURES • Plug-in amplifier design; amplifiers are removable from the front panel without rear access • Constant-voltage or constant-current excitation; 0.5 to 15V or 0.5 to 30 mA; selectable by single internal switch

AN937

Abstract: KY Nippon nippon capacitors AN-937 STPS3L60 dc-dc converter 48v to 24v 3a EKY nippon
Contextual Info: AN937 Application Note Designing with L4971, 1.5 A high efficiency DC-DC converter Introduction The L4971 is a 1.5 A monolithic dc-dc converter, step- down, operating at fix frequency continuous mode. It is designed in BCD60 II technology, and it is available in two plastic

Contextual Info: STRH40P10 P-channel 100 V, 0.060 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened