GIPS20K60
Abstract: STGIPS20K60 SDIP-25L TN0107
Text: STGIPS20K60 SLLIMM small low-loss intelligent molded module Features • IPM 18 A, 600 V 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes ■ Short-circuit rugged IGBTs ■ VCE sat negative temperature coefficient
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STGIPS20K60
SDIP-25L
GIPS20K60
STGIPS20K60
SDIP-25L
TN0107
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Untitled
Abstract: No abstract text available
Text: 818-AG11D-ESL-LF Product Details - TE Page 1 of 1 TE Connectivity My Cart | Have a Question? Japan Update Chat with a Product Information Specialist 818-AG11D-ESL-LF Product Details Share Product Highlights: TE Internal Number: 2-1571552-5 Submit Q Print Email
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818-AG11D-ESL-LF
818-AG11D-ESL-LF
com/catalog/pn/en/2-1571552-5
818-AG11D-ESL-.
03-May-2011
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Untitled
Abstract: No abstract text available
Text: STRH40P10 P-channel 100 V, 0.060 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened
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STRH40P10
O-254AA
SC06140p
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transistor smd w16
Abstract: smd transistor w16 hall sensor marked w10
Text: UM0723 User manual 1 kW three-phase motor control demonstration board featuring L6390 drivers and STGP10NC60KD IGBT 1 Introduction This document describes the 1 kW three-phase motor control demonstration board featuring the L6390 high and low-side drivers and the STGP10NC60KD IGBT. The demonstration
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UM0723
L6390
STGP10NC60KD
O-220
transistor smd w16
smd transistor w16
hall sensor marked w10
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Untitled
Abstract: No abstract text available
Text: STGIPS20K60 SLLIMM small low-loss intelligent molded module IPM, 3-phase inverter - 18 A, 600 V short-circuit rugged IGBT Datasheet − production data Features • IPM 18 A, 600 V 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes
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STGIPS20K60
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Untitled
Abstract: No abstract text available
Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened
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STRH40P10
O-254AA
SC06140p
DocID18354
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Untitled
Abstract: No abstract text available
Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened
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STRH40P10
O-254AA
SC06140p
DocID18354
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Untitled
Abstract: No abstract text available
Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened
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STRH40P10
O-254AA
SC06140p
DocID18354
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Untitled
Abstract: No abstract text available
Text: STGIPS20K60 SLLIMM small low-loss intelligent molded module IPM, 3-phase inverter - 18 A, 600 V short-circuit rugged IGBT Datasheet − production data Features • IPM 18 A, 600 V 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes
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STGIPS20K60
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strh40p10
Abstract: STRH40P10HYG MIL-STD-750E STRH40P10HY1 STRH40P10H
Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet — production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 3 1 2
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STRH40P10
O-254AA
SC06140p
strh40p10
STRH40P10HYG
MIL-STD-750E
STRH40P10HY1
STRH40P10H
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Untitled
Abstract: No abstract text available
Text: STB155N3H6 STD155N3H6 N-channel 30 V, 2.5 mΩ , 80 A, D²PAK, DPAK STripFET VI DeepGATE™ Power MOSFET Features Order codes VDSS RDS on max ID STB155N3H6 30 V < 3 mΩ 80 A (1) STD155N3H6 30 V < 3 mΩ 80 A (1) 1. Limited by wire bonding 3 3 1 1 • RDS(on) * Qg industry benchmark
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STB155N3H6
STD155N3H6
STD155N3H6
AM01474v1
155Nd
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Untitled
Abstract: No abstract text available
Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite
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STRH40P10
O-254AA
SC06140p
STRH40P10HY1
STRH40P10Hy
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Untitled
Abstract: No abstract text available
Text: STGIPS20K60 SLLIMM small low-loss intelligent molded module IPM, 3-phase inverter - 18 A, 600 V short-circuit rugged IGBT Datasheet - production data Applications • 3-phase inverters for motor drives Home appliances, such as washing machines, refrigerators, air conditioners and sewing
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STGIPS20K60
SDIP-25L
DocID16098
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Untitled
Abstract: No abstract text available
Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened
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STRH40P10
O-254AA
SC06140p
STRH40P10HY1any
DocID18354
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Untitled
Abstract: No abstract text available
Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite
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STRH40P10
O-254AA
SC06140p
STRH40P10HY1
STRH40P10HYG
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horizontal trimmer
Abstract: No abstract text available
Text: Product Page 1 of 1 The Trimmer Capacitor Company Print Product: JN080 Product Line General Specifications Product Line Insulation Resistance Operating Temperature JN - Ceramic Trimmer 10⁴ megaohms -25°C to +85°C Min Capacitance 3 Max Capacitance 8 DC Working Voltage
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JN080
100MHz
lrwnapp002\Sourcing\Automation\Automation
CPR\03052011\VOLC\.
03-May-2011
horizontal trimmer
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GIPS20K60
Abstract: No abstract text available
Text: STGIPS20K60 SLLIMM small low-loss intelligent molded module IPM, 3-phase inverter - 18 A, 600 V short-circuit rugged IGBT Features • IPM 18 A, 600 V 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes ■ Short-circuit rugged IGBTs
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STGIPS20K60
SDIP-25L
GIPS20K60
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strh40p10
Abstract: STRH40P10HYG
Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite
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STRH40P10
O-254AA
SC06140p
STRH40P10HY1
STRH40P
strh40p10
STRH40P10HYG
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L6924D
Abstract: No abstract text available
Text: STEVAL-ISA076V1 Battery charger demonstration board with integrated power switch for Li-Ion/Li-Polymer batteries based on the L6924D Data brief Features • Operating input voltage up to 12 V ■ Fully integrated solution with power MOSFET, reverse blocking diode, sense resistor, and
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STEVAL-ISA076V1
L6924D
L6924D
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Untitled
Abstract: No abstract text available
Text: 2200 System Micro-Measurements Signal Conditioning Amplifier FEATURES • Plug-in amplifier design; amplifiers are removable from the front panel without rear access • Constant-voltage or constant-current excitation; 0.5 to 15V or 0.5 to 30 mA; selectable by single internal switch
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27-Apr-2011
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AN937
Abstract: KY Nippon nippon capacitors AN-937 STPS3L60 dc-dc converter 48v to 24v 3a EKY nippon
Text: AN937 Application Note Designing with L4971, 1.5 A high efficiency DC-DC converter Introduction The L4971 is a 1.5 A monolithic dc-dc converter, step- down, operating at fix frequency continuous mode. It is designed in BCD60 II technology, and it is available in two plastic
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AN937
L4971,
L4971
BCD60
SO16L.
KY Nippon
nippon capacitors
AN-937
STPS3L60
dc-dc converter 48v to 24v 3a
EKY nippon
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Untitled
Abstract: No abstract text available
Text: STRH40P10 P-channel 100 V, 0.060 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened
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STRH40P10
O-254AA
O-254AA
SC06140p
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS COPYRIGHT UNPUBLISHED. RELEASED BY 20 TYCO ELECTRONICS CORPORATION FOR ALL 4X PUBLICATION INTERNATIONAL LOC RIGHTS RESERVED. REVISIONS DIST GP . HOLE DESCRIPTION DIAMETER DATE DWN REV PER ECO-1 0 - 0 216 2 7 24JAN2011 RG REV PER E C O - 1 1- 0 0 76 7 8
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24JAN2011
03MAY2011
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DIN 16901-140
Abstract: 1355072 1-965641-3 1-967628-6 2-967630-1 1-967630-5 967632-1 967633-1 1-967627-1 1-967627-5
Text: THIS DRAWI NG IS UNPUBLISHED. RELEASED ALL C O P Y R I G H T 2011 F OR PUBLICATIO N RIGHTS 2011 MATED W I T H / p assend zu: SEE 1355071 and 1355073 RESERVED. 1 0 , 7g 42.8 6 42.5 21 P R O J E K T NR . A92-52228 REV I SI ONS DIST L OC A 0,7g 36 IS 25 57.8
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A92-52228
28AUG2008
17NOV2008
18FEB2009
03MAY2011
DIN 16901-140
1355072
1-965641-3
1-967628-6
2-967630-1
1-967630-5
967632-1
967633-1
1-967627-1
1-967627-5
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