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    STMicroelectronics STRH40P10HYT

    Trans MOSFET P-CH 100V 34A 3-Pin TO-254AA Carrier T/R - Bulk (Alt: STRH40P10HYT)
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    STMicroelectronics STRH40P10HYG

    Trans MOSFET P-CH 100V 34A 3-Pin(3+Tab) TO-254AA - Bulk (Alt: STRH40P10HYG)
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    STMicroelectronics STRH40P10HY1

    Trans MOSFET P-CH 100V 34A 3-Pin(3+Tab) TO-254AA - Bulk (Alt: STRH40P10HY1)
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    STRH40P10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: STRH40P10 P-channel 100 V, 0.060 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened


    Original     		PDF STRH40P10 O-254AA SC06140p

    to-254aa

    Abstract: No abstract text available
    Text: STRH40P10 P-channel 100 V, 0.060 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened


    Original     		PDF STRH40P10 O-254AA STRH40P10FSY1 STRH40P10FSY01 to-254aa

    RH40P

    Abstract: No abstract text available
    Text: STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH40P10FSY3 100V • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization


    Original     		PDF STRH40P10FSY3 O-254AA O-254AA STRH40P10 RH40P

    Untitled

    Abstract: No abstract text available
    Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened


    Original     		PDF STRH40P10 O-254AA SC06140p DocID18354

    Untitled

    Abstract: No abstract text available
    Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened


    Original     		PDF STRH40P10 O-254AA SC06140p DocID18354

    Untitled

    Abstract: No abstract text available
    Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened


    Original     		PDF STRH40P10 O-254AA SC06140p DocID18354

    strh40p10

    Abstract: STRH40P10HYG MIL-STD-750E STRH40P10HY1 STRH40P10H
    Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet — production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 3 1 2


    Original     		PDF STRH40P10 O-254AA SC06140p strh40p10 STRH40P10HYG MIL-STD-750E STRH40P10HY1 STRH40P10H

    Untitled

    Abstract: No abstract text available
    Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite


    Original     		PDF STRH40P10 O-254AA SC06140p STRH40P10HY1 STRH40P10Hy

    Untitled

    Abstract: No abstract text available
    Text: STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40P10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge 3 2 1 TO-254AA ■


    Original     		PDF STRH40P10FSY3 O-254AA 100kRad 34Mev/cm O-254AA

    Untitled

    Abstract: No abstract text available
    Text: STRH40P10FSY1 STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40P10FSY1 100 V STRH40P10FSY3 100 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned 3 2 1 TO-254AA


    Original     		PDF STRH40P10FSY1 STRH40P10FSY3 O-254AA 34Mev/cm O-254AA

    Untitled

    Abstract: No abstract text available
    Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened


    Original     		PDF STRH40P10 O-254AA SC06140p STRH40P10HY1any DocID18354

    Untitled

    Abstract: No abstract text available
    Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite


    Original     		PDF STRH40P10 O-254AA SC06140p STRH40P10HY1 STRH40P10HYG

    Untitled

    Abstract: No abstract text available
    Text: STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH40P10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge


    Original     		PDF STRH40P10FSY3 O-254AA 100kRad 34Mev/cm O-254AA

    strh40p10

    Abstract: STRH40P10HYG
    Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite


    Original     		PDF STRH40P10 O-254AA SC06140p STRH40P10HY1 STRH40P strh40p10 STRH40P10HYG

    STRH40P10FSY3

    Abstract: JESD97 STRH40P10FSY1
    Text: STRH40P10FSY1 STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40P10FSY1 100 V STRH40P10FSY3 100 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned 3 2 1 TO-254AA


    Original     		PDF STRH40P10FSY1 STRH40P10FSY3 O-254AA 34Mev/cm STRH40P10FSY3 JESD97 STRH40P10FSY1

    Untitled

    Abstract: No abstract text available
    Text: STRH40P10 P-channel 100 V, 0.060 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened


    Original     		PDF STRH40P10 O-254AA O-254AA SC06140p