0402CS REACH Search Results

Rogers RO4350B

Abstract: RO4350B ROGERS GRM155R71E103KA01 25C2625 GRM1555C1H181JZ01
Contextual Info: Document Number: MML09212H Rev. 1, 4/2013 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E−pHEMT MML09212HT1 Low Noise Amplifier The MML09212H is a 2−stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed

GJM1555C1H180GB01

Abstract: GRM1555C1H180JA01 C11 inductor RC0402FR-07-1K2RL RO4350B Rogers RO4350B microstrip phemt .s2p 25c2625
Contextual Info: Document Number: MML20242H Rev. 1, 4/2013 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E−pHEMT MML20242HT1 Low Noise Amplifier The MML20242H is a 2−stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed

transistor 975

Contextual Info: MAGX-000035-01000P GaN Wideband 10 W CW / Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V1 Features •         GaN on SiC D-Mode Transistor Technology Unmatched, Ideal for Pulsed / CW Applications 50 V Typical Bias, Class AB

Contextual Info: MAGX-000035-01000P GaN Wideband 10 W CW / Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V2 Features •         GaN on SiC D-Mode Transistor Technology Unmatched, Ideal for Pulsed / CW Applications 50 V Typical Bias, Class AB

12065A104JAT2A

Abstract: F QFN 3X3 020C JESD22 MMG2401 MMG2401R2 A114-G 12065A105JAT2A 156 qfn TRANSISTOR A114 E
Contextual Info: Freescale Semiconductor Technical Data MMG2401 Rev. 0, 11/2004 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz MMG2401R2 • 26.5 dBm P1dB @ 2450 MHz • • • •

12065A104JAT2A

Abstract: 12065A105JAT2A F QFN 3X3 A113 A114 A115 C101 JESD22 MMG2401 MMG2401NR2
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG2401 Rev. 3, 5/2006 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. MMG2401NR2 • 26.5 dBm P1dB @ 2450 MHz

signal generator 8665b

Contextual Info: Broadband Up/Downconverting Mixer with Integrated Fractional-N PLL and VCO ADRF6655 FEATURES The programmable divider is controlled by an Σ-Δ modulator SDM . The modulus of the SDM can be programmed between 1 and 2047. Broadband active mixer with integrated fractional-N PLL

12065A104JAT2A

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG2401 Rev. 3, 5/2006 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. MMG2401NR2 • 26.5 dBm P1dB @ 2450 MHz

12065A104JAT2A

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG2401 Rev. 2, 4/2005 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. MMG2401NR2 • 26.5 dBm P1dB @ 2450 MHz

ML200M

Abstract: F QFN 3X3 A113 A114 A115 C101 JESD22 MMG2401 MMG2401NR2 12065A104JAT2A
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG2401 Rev. 2, 4/2005 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. MMG2401NR2 • 26.5 dBm P1dB @ 2450 MHz

ADRF6655-EVALZ

Abstract: TC1-1-43A balun tc1-1-13m ADRF6655 dv5 1250 IP1dB 0402C ADRF6655ACPZ-R7 Agilent E5052 settling time E4440
Contextual Info: Broadband Up/Downconverting Mixer with Integrated Fractional-N PLL and VCO ADRF6655 The programmable divider is controlled by an Σ-Δ modulator SDM . The modulus of the SDM can be programmed between 1 and 2047. FEATURES Broadband active mixer with integrated fractional-N PLL

balun transformer 75 ohm 1000MHz

Abstract: 50W linear power amplifier 4000MHz ADTL2-18 1ghz amp n50 schematic diagram vga 15-pin IC 2032A ETC1-1-13 cd542
Contextual Info: LTC6430-15 High Linearity Differential RF/IF Amplifier/ADC Driver Description Features 50.0dBm OIP3 at 240MHz into a 100Ω Diff Load n NF = 3.0dB at 240MHz n 20MHz to 2000MHz Bandwidth n 15.2dB Gain n A-Grade 100% OIP3 Tested at 240MHz n 1.0nV/√Hz Total Input Noise

nokia 5800 lcd

Abstract: nokia 5800 tv cable nokia 1200 lcd nokia 6280 lcd nokia 3600 lcd eldor nokia 5800 LEM2520T PE-0805CM nokia tv flyback
Contextual Info: Wire-Wound - 0402, 0603, 0805, 1008, 1206 RF Chip Inductors WC701.K 11/07 WIRE-WOUND RF CHIP INDUCTORS P ulse is one of the largest magnetic component design and manufacturing companies in the world. With over 19,000 employees worldwide and an extensive line of stateof-the-art magnetic solutions, Pulse has become a leading supplier of magnetic components to OEMs and Contract Manufacturers in data networking, connectivity, digital

nokia 5800 lcd

Abstract: nokia 1100 lcd semiconductor cross reference LEM2520T nokia tv flyback Flyback Transformers FBTs Marconi 2030 nokia 1200 lcd flyback transformer eldor nokia 1850
Contextual Info: Wire-Wound - 0402, 0603, 0805, 1008, 1206 RF Chip Inductors WC701.L 4/10 WIRE-WOUND RF CHIP INDUCTORS P ulse is one of the largest magnetic component design and manufacturing companies in the world. With over 19,000 employees worldwide and an extensive line of state-of-the-art magnetic

IBM motherboard rev 1.6 socket 478

Abstract: IC 78l05 HT15X34-110 Prestigio pentium m 735 fw82801fb MELF ZENER DIODE color bands blue mitac 8666 AMD AM2 motherboard schematic diagram pmc flash pm49fl004t-33jc
Contextual Info: PRESTIGIO NOBILE 1510 TECHNICAL SERVICE MANUAL TECHNICAL SERVICE MANUAL Prestigio Nobile 1510 Contents 1. Hardware Engineering Specification………………………………………………………………………. 4 1.1 Introduction ………………………………………………………………………………………………………………. 4