800MW Search Results

Contextual Info: High Directivity Monolithic Amplifier 50Ω VNA-22 0.5 to 2.5 GHz Maximum Ratings Operating Temperature Features -40°C to 85°C Storage Temperature -55°C to 150°C DC Voltage 8V Power 800mW Input Power no damage 10 dBm Pin Connections • 3V & 5V operation

tdk cn-3850

Abstract: CN3851 CN-3850 CN-3851 TDK CN3850 CN3850 CN3803 TDK DC to DC converters, DC to AC inverters CN3857 CN-3801
Contextual Info: TDK DC to DC Converters, DC to AC Inverters 800mW 4 0E D • ÔÛS12MÔ T D K OGOM^B 1 ¡TDKA CORP 7- // _ CN SERIES DC TO DC CONVERTERS FEATURES • High stability ± 5 % . • Low-profile — Can be installed in a 3/4 inch rack, (height 12mm [.472 inches])

A10C

Abstract: CY7C1006
Contextual Info: CYPRESS SEMICO NDU CTOR MbE » I aSflìbbé QD0ti7Q4 T • CY7C1006 ADVANCED INFORMATION. CYPRESS SEMICONDUCTOR 256K x 4 Static R/W RAM Features Functional Description • Highspeed — U a = 15 ns • CMOS for optimum speed/power • Low active power — 800mW

KSC1008

Contextual Info: KSC1008 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING TO-92 • Complement to KSA708 • High Collector-Base Voltage: VCBO=80V • Collector Current: IC=700mA • Collector Dissipation: PC=800mW ABSOLUTE MAXIMUM RATINGS TA=25°°C

Transistor B C 458

Abstract: ksb564 ksd471
Contextual Info: KSD471A KSD471A Audio Frequency Power Amplifier • • • • Complement to KSB564A Collector Current : IC=1A Collector Power Dissipation : PC=800mW Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector

pnp Transistor TO92 5V 200mA

Abstract: KSA709
Contextual Info: KSA709 KSA709 High Voltage Amplifier • • • • Collector-Base Voltage : VCBO= -160V Collector Power Dissipation : PC=800mW Complement to KSC1009 Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector

transistor c1009

Abstract: c1009 c1009 transistor KSA709 KSC1009
Contextual Info: KSC1009 KSC1009 High Voltage Amplifier • • • • • High Collector-Base Voltage : VCBO=160V Collector Current : IC=700mA Collector Power Dissipation : PC=800mW Complement to KSA709 Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base

laser diode 660nm

Abstract: K66S09F-0
Contextual Info: 660nm~690nm HHL Package Fiber-Coupled Diode Laser K66S09F-0.80W K67S09F-0.80W K68S09F-0.80W K69S09F-0.80W Key Features： Š 800mW output power Š 105µm or 200µm fiber core diameter Š 0.22NA Š 660nm~690nm wavelength Applications： Š Medical use Š Material processing

DPS8100

Abstract: TLFD600 schematic diagram modem adsl echo cancellation schematic diagram 3bit flash adc ISSCC99
Contextual Info: A 800mW, Full-Rate ADSL-RT Analog Frontend IC with Integrated Line Driver Hubert Weinberger, Andreas Wiesbauer, Christian Fleischhacker, Jörg Hauptmann Infineon Technologies, Design Centers Austria GmbH, Design Center Villach hubert.weinberger@infineon.com

KSA708

Contextual Info: KSA708 KSA708 Low Frequency Amplifier & Medium Speed Switching • • • • Complement to KSC1008 Collector-Base Voltage : VCBO= -80V Collector Power Dissipation : PC=800mW Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1

Contextual Info: Audio ICs 6V/800mW single-channel power amplifier BA527 The BA527 is a monolithic power amplifier designed for portable cassette players and radio cassette players. With a 6V power supply, it has a rated output of 800mW into a 4Q load THD = 10% . It is a high-grade design that gener­

TB-01

Abstract: VNA-22 XX211
Contextual Info: High Directivity VNA-22+ VNA-22 Monolithic Amplifier 50Ω 0.5 to 2.5 GHz Maximum Ratings Operating Temperature Features -40°C to 85°C Storage Temperature -55°C to 150°C DC Voltage 8V Power 800mW Input Power no damage 10 dBm Pin Connections • 3V & 5V operation

SDD115

Contextual Info: DC/DC Converter Transformer Type SDD115 Dimensions: UNIT : mm 12.0 Max. Recommand Pad Specifications 4.5 Max. 5 8 2.0 1.0 11.3 Max. 2.5 4 Max. Operation Freq. : 500KHz Max. Operation Power : 800mW @100KHz 2.0W @300KHz 3.0W @500KHz 6.5 1 0.5x0.15 DDR63 3.0 Max.

ADC80-12

Abstract: 223S ADC80 ADC80-10 DAC 0-10v
Contextual Info: ANALOG D EV ICES □ 12-Bit Successive Approximation Integrated Circuit A/D Converter PRELIM IN A R Y TECHNICA L DATA FEATURES Performance True 12-Bit Operation: Max Nonlinearity <±0.012% Low Gain T.C.: <±30ppm /°C Low Power: 800mW Fast Conversion Time: <22/us

Contextual Info: Ordering number : ENA1078A CPH6003A RF Transistor http://onsemi.com 12V, 150mA, fT=7GHz, NPN Single CPH6 Features • • • • High gain fT=7GHz typ High Current (IC=150mA) Ultraminiature and thin 6pin package Large Collector Disspation (800mW) Specifications

transistor 1005 oj

Abstract: KSA707 KSC1072
Contextual Info: SAMSUNG S EM I C ONDU C T OR INC 14E KSC1072 D | 7TbM:L42 Q0Qt.fl7M 3 | T -lf-H NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Complement to KSA7U7 • Collector-Base Voltage Vceo=60V • Collector Dissipation Pc =800mW ABSOLUTE MAXIMUM RATINGS Ta=25°C

PA3202

Abstract: PA3202-N24-R PA3202-N24-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD PA3202 CMOS IC 2-W STEREO AUDIO POWER AMPLIFIER WITH MUTE „ DESCRIPTION The UTC PA3202 is a monolithic integrated circuit that stereo bridged audio power amplifiers capable of producing 2 W into 3Ω with a 5V supply voltage or 800mW into 3Ω with a 3.3V supply

KSC1008

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSC1008 LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING • • • • Complement to KSA7D8 High Collector-Base Voltage Vcso=BOV Collector Current lc=700mA Collector Dissipation Pc=800mW ABSOLUTE MAXIMUM RATINGS Ta=25°C

KSA708

Abstract: KSC1008
Contextual Info: KSA708 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER TO-92 MEDIUM SPEED SWITCHING • Complement to KSC1008 • Collector-Base Voltage VCBo=-80V • Collector Dissipation Pc =800mW ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage

2SA708

Contextual Info: fr | e FORWARD INTERNATIONAL ELECTRONICS l id . 2SA708 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AM PLIFIER MEDIUM SPEED SW ITCHING * Complement to2Scl008 * Collector-Base Voltage Vcbo=-80 V * Collector Dissipation; Pc=800mW

Contextual Info: MCC TM Micro Commercial Components KSD471A KSD471A-O KSD471A-Y KSD471A-G
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x Collector Dissipation : IC = 1A x Collector Current : PC = 800mW

a1024

Abstract: Panasonic diode MA1033 DIODE D29 MA4030 ma4300 zener MA2560 MA7056 MA1Z091 MA2430
Contextual Info: Diode # Zener Diode Series Zener Voltage Vz V MA1000 DO-35 (D28) P d = 500mW MA2000 DO-41 (D29) P D = 1W MA3000/MAZ Mini Type 3 pins (D12) P d = 200mW MA4000 DO-34 (D26) Pc = 370mW MA5000 Mini-Power Type 2 pins (D17) P D = 500mW MA7000 DO-41 (D29) P d = 800mW

Contextual Info: CPH6003A Ordering number : ENA1078A Features • • • • High gain fT=7GHz typ High Current (IC=150mA) Ultraminiature and thin 6pin package Large Collector Disspation (800mW) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to- Base Voltage

MA7300B

Abstract: MA7056 MA7160 MA7470 MA7100 Ma7180-a MA7000 ma706 zener band yellow MA7510
Contextual Info: MA111 Zener Diodes MA7000 Series Silicon planer type Unit : mm For stabilization of power supply ø0.8 ● Radial taping possible 27 min. Large power dissipation Ptot 800mW Colored band indicates Vz classification 3rd Band 2nd Band 1st Band 5.0 max. ●