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    045N1 Search Results

    045N1 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TW045N120C
    		Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET, 1200 V, 40 A, 0.059 Ω@18 V, TO-247 Visit Toshiba Electronic Devices & Storage Corporation
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    045N1 Price and Stock

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    Pulse Electronics Corporation BSPQ000603045N1H00

    FIXED IND 5.1NH 400MA 250MOHM SM
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    DigiKey () BSPQ000603045N1H00 Cut Tape 14,695 1
    • 1 $0.10
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    • 100 $0.07
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    BSPQ000603045N1H00 Digi-Reel 14,695 1
    • 1 $0.12
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    • 100 $0.08
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    • 10000 $0.05
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    Avnet Americas BSPQ000603045N1H00 Reel 111 Weeks 15,000
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    Mouser Electronics BSPQ000603045N1H00 14,735
    • 1 $0.10
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    Newark BSPQ000603045N1H00 Cut Tape 15,000 1
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    Sager BSPQ000603045N1H00
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    Goford Semiconductor GT045N10D5

    MOSFET N-CH 100V 120A DFN5*6-8L
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    DigiKey () GT045N10D5 Digi-Reel 4,517 1
    • 1 $2.66
    • 10 $1.71
    • 100 $1.18
    • 1000 $0.95
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    GT045N10D5 Cut Tape 4,517 1
    • 1 $2.66
    • 10 $1.71
    • 100 $1.18
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    UMW IPP045N10N3G

    MOSFET N-CH 100V 100A TO220
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    DigiKey IPP045N10N3G Tube 1,000 1
    • 1 $2.99
    • 10 $1.94
    • 100 $1.34
    • 1000 $1.00
    • 10000 $0.91
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    UMW FDP045N10A

    MOSFET N-CH 100V 120A TO220
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    DigiKey FDP045N10A Tube 982 1
    • 1 $2.53
    • 10 $1.63
    • 100 $1.11
    • 1000 $0.82
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    onsemi FDP045N10A-F102

    MOSFET N-CH 100V 120A TO220-3
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    DigiKey FDP045N10A-F102 Tube 785 1
    • 1 $4.37
    • 10 $4.37
    • 100 $2.40
    • 1000 $1.89
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    Avnet Americas FDP045N10A-F102 Tube 11 Weeks 800
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    • 1000 $2.17
    • 10000 $1.89
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    Mouser Electronics FDP045N10A-F102 892
    • 1 $4.28
    • 10 $3.78
    • 100 $2.35
    • 1000 $1.89
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    Newark FDP045N10A-F102 Bulk 3,249 1
    • 1 $5.86
    • 10 $5.13
    • 100 $3.45
    • 1000 $3.30
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    Richardson RFPD FDP045N10A-F102 800
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    Avnet Silica FDP045N10A-F102 12 Weeks 50
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    EBV Elektronik FDP045N10A-F102 13 Weeks 50
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    Flip Electronics FDP045N10A-F102 207,200
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    Win Source Electronics FDP045N10A-F102 83,000
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    • 100 $2.64
    • 1000 $2.36
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    Find more 045N1 price and stock on Findchips.com

    045N1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IPA045N10N3

    Abstract: THV-150
    Contextual Info: 045N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max 4.5 mW ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant


    Original     		IPA045N10N3 PG-TO220-FP 045N10N THV-150 PDF

    045n10n

    Abstract: D100 TO-220 045n1 042N10N 045N10 IPP045N10 IPB042N10N3 G IEC61249-2-21 PG-TO220-3 042N10
    Contextual Info: IPB042N10N3 G 045N10N3 G 045N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 4.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB042N10N3 IPI045N10N3 IPP045N10N3 IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 045n10n D100 TO-220 045n1 042N10N 045N10 IPP045N10 IPB042N10N3 G IEC61249-2-21 PG-TO220-3 042N10 PDF

    045n10n

    Abstract: 042n10n D100 TO-220 IPI045N10N3 G 045N10 042N10 045n1 PG-TO220-3 IPP045N10N IPP045N10
    Contextual Info: IPB042N10N3 G 045N10N3 G 045N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 4.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB042N10N3 IPI045N10N3 IPP045N10N3 PG-TO263-3 PG-TO262-3 PG-TO220-3 042N10N 045n10n 042n10n D100 TO-220 IPI045N10N3 G 045N10 042N10 045n1 PG-TO220-3 IPP045N10N IPP045N10 PDF

    045n10n

    Abstract: 045N10 045n1 IPA045N10N3 JESD22 DD-50
    Contextual Info: 045N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 4.5 mΩ ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPA045N10N3 PG-TO220-FP 045N10N 045n10n 045N10 045n1 JESD22 DD-50 PDF

    045N10

    Abstract: 045N10N
    Contextual Info: 045N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max 4.5 mW ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant


    Original     		IPA045N10N3 IEC61249-2-21 PG-TO220-FP 045N10N 045N10 045N10N PDF