048 ITT DIODE Search Results

VB34

Abstract: kdi switch ITT 710 VB-25-A VB23A
Contextual Info: BROADBAND SP3T SWITCH SERIES VM/VB-A REFLECTIVE AND ABSORPTIVE 0.02-18 GHz _ 1.40 _ 3.56 _ 1.200 _ 3 048 GENERAL INFORMATION: Series VM and VB-A broadband switches are medium power devices that operate over relatively wide frequency ranges. Carefully selected diodes

SD5600

Abstract: 5610 oc
Contextual Info: SD5600/5610 Optoschm itt Detector FEATURES • TO-46 metal can package • 6° nominal acceptance angle • High noise immunity output . TTL/LSTTL/CMOS compatible . Buffer (SD5600) or inverting (SD5610) logic available • Mechanically and spectrally matched to

048 itt diode

Contextual Info: PD - 94905 IRG4BC10UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

477J

Abstract: SD 5455 sd 5491
Contextual Info: SE3455/5455 GaAs Infrared Emitting Diode FE A TU R ES • TO -46 m etal can package • C hoice of flat w indow or lensed package • 90° or 20° nom inal beam angle option • 935 nm w avelength • W ide operating tem perature range • Ideal fo r high pulsed current applications

Contextual Info: PD - 94905 IRG4BC10UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

IRG4BC10UD

Contextual Info: PD - 94905 IRG4BC10UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: PD - 94905 IRG4BC10UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

bbc 598 479 DIODE

Abstract: cannon CA3106ke strd 5441 2da31p crimp tool and positioner MS3191-1 crimper specification ntp 3100 SM 5126 BP Radial arinc 600 617 411 057 MS27491-22 MS3165
Contextual Info: Military/Aerospace May we suggest you contact the ITT Cannon technical sales office nearest you for immediate assistance with technical questions, order placement or simply to discuss your next project. Contents Series Prefix Description Page Rack and Panel Connectors

lN34A

Abstract: Germanium itt
Contextual Info: SEMICONDUCTORS7 " le m lt r o n SemitronicsCorp. 'Tz'O I-*0 7 INTEX/ SEMITRONICS CORP germanium diodes Max. P tik iH lf ll MM. Farward V o lt«« vo lti Farward Currant <mA) Ravarsa Currant (MÂ) Pawar Ravarsa Disci* Voltaga patian (»alt«) (mW) Ti m Vottap

667 transistor ecb

Abstract: EVL32-060 A50L-0001-0109
Contextual Info: Mechanical Drawings All Dimensions in inches mm . AX-5W Case 106 .037(0.94) .043(1.09) .048(1.22) •053(1.35) 1.0(25.4) 1.0(25.4) MI NI MUM MI NI MUM 330(8.38) .340(8.64) .360(9.14) 350(8.89)! T T 130(3.30) _ 145(3.68) 340(8.64) . 3 60 ( 9. 1 4) r*1.0(25.4)

irf 460A

Abstract: IRF3710S AN-994 IRF3710
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1310 IRF3710S PRELIMINARY HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated

irf 460A

Abstract: IRF3710S IRF3710s equivalent mosfet irf3710 AN-994 IRF3710
Contextual Info: PD 9.1310 IRF3710S PRELIMINARY HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.028Ω G ID = 46A

AF02

Abstract: 2SJ198 2SK1484 K0852
Contextual Info: -y 5 7 • h ~ mos M O S Field Effect Transistor 2 P x 4 J 1 9 8 MOS F E T 2SJ198 a P f- ^ * M m MOS F E T T, 5 V iz j: § S IC mm -y f- > r m ^ - v t o *M O S FET l i t 5.2 MAX. <, X >f y f- > 7 ? f- ^ - ? ^ i K > D C - D C X ' f «y f - i - ^ i S T " i “ o

Aero-Electric Connector D38999

Abstract: KPTM SERIES CONNECTOR HELLERMAN DEUTSCH 770-001A
Contextual Info: Four Reasons to Choose Composites for Your Next Interconnect Application Glenair's composite interconnect components are manufactured from high-grade engineering thermoplastics for the toughest application environments. Specifically geared for high-performance air, sea, land and

TCM29C14A

Abstract: d3314
Contextual Info: TCM129C13A, TCM129C14A, TCM129C16A, TCM129C17A, TCM29C13A, TCM29C14A, TCM29C16A, TCM29C17A COMBINED SINGLE-CHIP PCM CODEC AND FILTER D3314, A U G U S T 1 9 8 9 - R E V IS E D D EC EM BER 1990 FEATURE TABLE Replaces Use of TCM 2910A and TCM 2911A in Tandem with TCM 2912B/C

Contextual Info: TCM29C13, TCM29C14, TCM29C16, TCM29C17, TCM129C13, TCM129C14, TCM129C16, TCM129C17 COMBINED SINGLE-CHIP PCM CODEC AND FILTER SCTS011Q - APRIL 1986 - REVISED JULY 1996 Replaces Use of TCM2910A In Tandem With TCM2912C Reliable Silicon-Gate CMOS Technology Low Power Consumption:

TCM29C14A

Contextual Info: TCM29C13A, TCM29C14A, TCM29C16A, TCM29C17A, TCM129C13A, TCM129C14A, TCM129C16A, TCM129C17A COMBINED SINGLE-CHIP PCM CODEC AND FILTER _ SCTS030D - A U G U S T 1989 - REVISED JULY 1996 • • • • • • Replace Use of TCM2910A and TCM2911A

n373

Contextual Info: TCM38C17 QCombo FOUR-CHANNEL QUAD PCM COMBO S L W S 0 40 - J U N E 1996 Single 5-V Supply DGG PACKAGE (TOP VIEW) R B IA S [ Reliable Submicron Sillcon-Gate CMOS Technology Low Power Consumption (per Channel) - Operating Mode. . . 40 mW Typical - Power-Down Mode. . . 1 mW Typical

Contextual Info: IND: -25 Advanced Micro Devices PALLV22V10Z-25 Low-Voltage, Zero-Power 24-Pin EE CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • ■ 10 macrocells programmable as registered or combinatorial, and active high or active low to match application needs

3067B

Contextual Info: TP3064B, TP3067B, TP13064B, TP13067B MONOLITHIC SERIAL INTERFACE COMBINED PCM CODEC AND FILTER SC TS031D- MAY 1990-REVISED JULY 1996 • Complete PCM Codec and Filtering Systems Include: - Transmit High-Pass and Low-Pass Filtering - Receive Low-Pass Filter With sin x /x

Contextual Info: & Microchip P I C 1 6 C 5 X EPROM-Based 8-Bit CMOS Microcontroller Series • Oscillator start-up tim er • W atchdog tim er WDT with its own on-chip RC oscillator for reliable operation • Security EPROM fuse for code-protection • Power saving SLEEP mode

Contextual Info: •J» GOULD T1 /CEPT Digital Trunk PLL Electronics Preliminary Data Sheet COMMUNI­ CATION S8940 Digital Trunk Transmission Links • ST-BUS Clock and Frame Pulse source Features • Provides T1 clock at 1.544 MHz locked to input frame pulse • Sources CEPT 30 + 2 Digital Trunk/ST-BUS clock

Contextual Info: TCM29C23, TCM129C23 VARIABLE-FREQUENCY PCM OR DSP INTERFACE S C T S 0 2 9 A -A U G U S T 1989 -R E V IS E D JULY 1996 • Combined ADC, DAC, and Filters • Extended Variable Frequency Operation - Master Clock Up to 4.096 MHz - Sample Rates Up to 16 kHz - Passband Up to 6 kHz

Contextual Info: Si GEC PLESSEY S E M I C O N D U C T O R S D S 3 4 7 9 - 4.0 VP2615 H .261 DECODER Supersedes January 1996 Edition, DS3479-3.0 FEATURES DESCRIPTION Inputs run length coded transform data O u tp u ts 8 bit pixels in YU V block form at U p to fu ll C IF resolution and 30 Hz fram e rates