04A21 Search Results

bgs2

Abstract: BGS3 tb 9207 5566-NB6S MOLEX mxj a2 ag52 SD-5566 je 243 08-B5 mxj A2 connector
Contextual Info: 10 co 'ST LO 4 .2 — DIM. A FIn n FI M M 6 |t QSO FIn n I4I5In n MM fl«l ,|CMM 6il16m FIn n 14II51 FIn n 14H51pin FI M 7|b M 10II1MM »il6M m T n 4 n n n MMn n MM lo) n I MM I 1? 13 IS IT 20 n n n MMFin MMn n !TI 18MM m 1 3I 14 B FIn n 14I516^ FIn n MMFin n n n MMFin 1BI31

04A21

Abstract: SD-5566 55b6 cr 6224 T AM 22A 1043 5566S SD5566 ru 94v0 circuit MOLEX mxj 8A
Contextual Info: 10 3 7 „8 20 39 3 3 „6 8 3 4 .8 2 9 .4 6 3 0 „6 LO CM 2 „6 8 co co 9 .6 S 4 .2 — 4 'ST DIM. A F I n n 14 II 5 1 F I n n 14 H5 1p in F I M 7|b M 10II 1 M M »il6 M m T n 4 2 1? F I n n 14 I 5 16^ M 8II9 M l"l 12 13 IS IT n n n M M F in 1BI 3 1 f,3| »i 6

Contextual Info: 10 s m R IB IN D IC A T E S C IR C U IT NO.I | n , U =^ I 5 47 43 39 34 30 26 10 I I Y I Z I p it c h T / 8 6 46 42 37 33 29 25 4 2 6 4 2 18 16 14 ,4 ,2 16 ,8 18 13 8 9 6 5 4 12 06 8 ,4 4 2 DIM B 22 20 ,8 06 22 2 0 T|f7] 0 z\(0 0 0 5 6 0 jlI i j 0 24 ,2 □ 0000

fu 9024

Abstract: bu 5027 yt 5188 FU 9024 N 5566-02AS-210 20A400 086s MOLEX mxj a2 5566 molex 5566-02A
Contextual Info: 10 I IY IZ I 5 47 43 39 34 30 26 22 8 3 9 5 6 4 2 8 6 4 2 8 6 4 DIM B 46 42 37 33 29 25 2 6 2 8 4 2 n 7 7] 0 5 -iJ 24 22 20 8 6 4 2 IO 8 6 4 2 8 6 4 2 8 6 4 2 DIM A 0 0 0 0 n 0 7 0 0 6 T0 00000 00000 00000000 10 CKTS. I6 CKTS. CKTS. 000000 000000 0 0 7 F ii 5 7 7 »IM

GP144

Contextual Info: GEC P L E S S E Y Is e m i c o n d u c t o r s MARCH 1992 ! 2462 - 3.1 CLA70000 SERIES HIGH DENSITY CMOS GATE ARRAYS S u persedes Jan uary 1992 edition R ecent advances in CMOS processing technology and im p ro vem e nts in design a rch ite ctu re have led to the

LT 9228

Abstract: lt 6228 tny 604 lt 6224 CD 9088 5566-06a st 6062 5566-NA-GR mxj 2 connector tin 606
Contextual Info: 10 5 1.6 47 .4 4 3 .2 39 34 .8 30 .6 26 .4 22 .2 I8 I3 .8 9 .6 5 .4 46 .2 42 37 .8 33 .6 29 .4 25 .2 2I I6 .8 I2 .6 8 .4 4 .2 — 24 22 20 I8 I6 I4 I2 IO 8 6 4 2 DIM. B DIM. A CKT. SIZE 3 I i \ W \ — a — I 2 [ S Ü 3 ^ Tijfr irjfirj Tîijhë nrlnrl -a -

Contextual Info: P a r t I l u m b e r : WUS —04A211 13.6 Ref 7,0 (Ref) 13.1(Ref) Notes 2 PLC 3.0 (Ref) ♦ M a te r ia l C o n ta c ts : P h o sp h o r Bron ze. Sh e ll : P h o sp h o r BronzeH ousin g : UL 94V—0 R ate d ,T h e rm o p la stic . 3.5 (Ref) 2 PLC ♦ P la tin g

mxj 8B

Abstract: 5566-NB-310 5566a 5566-N 5566-02A-RE nas 624 5566-NA MOLEX mxj 8A MOLEX mxj-3 connector bu 5027
Contextual Info: 10 I IY IZ I 5 47 43 39 34 30 26 22 8 3 9 5 6 4 2 46 42 37 33 29 25 2 6 2 8 4 8 6 4 2 8 6 4 DIM B 2 24 22 20 8 6 4 2 IO 8 6 4 2 8 6 4 2 8 6 4 2 DIM A 7 7] n 5 n 0 7 0 0 6 T0 -iJ ii I2 F ii 5 7 15 0 0 7 IB »IM 0 0 00000 00000000 00000 00000000 0 0 0 0 CKTS.

CD 9088

Abstract: AGS-210-TA 5566-02AGS-TA SD-5566-002 5566-N SD-5566-N 39-53-9249 cr 6224 T 5566-02A iobpb-2
Contextual Info: 10 5 1.6 47 .4 4 3 .2 39 34 .8 30 .6 26 .4 22 .2 I8 I3 .8 9 .6 5 .4 46 .2 42 37 .8 33 .6 29 .4 25 .2 2I I6 .8 I2 .6 8 .4 4 .2 — 24 22 20 I8 I6 I4 I2 IO 8 6 4 2 DIM. B DIM. A CKT. SIZE 3 I i \ W \ — a — I 2 [ S Ü 3 ^ Tijfr irjfirj Tîijhë nrlnrl -a -

ed 9225

Abstract: 5566-2 molex 5566-02AS-210 5566-N RA 8040 5566-08A af/ADM206E/ADM207E/ADM208E/ADM211E/ed 9225
Contextual Info: 10 co 'ST LO 4 .2 — DIM. A F I n n I 4 I 5 In n M M fl«l ,|C M M 6il16m FIn n FI M M 6 |t QSO F I n n 14 II 5 1 F I n n 14 H5 1p in F I M 7|b M 10II 1 M M »il6 M B F I n n M M F in 0II H M 9 II 10 13 IS IT n n n M M F in 1BI 3 1 f,3| »i 6 M h 'l F I n n 14 I 5 16^

I3B3

Contextual Info: 10 s m RIB INDICATES CIRCUIT NO.I | n , U =^ I 10 5 6 47 4 43 2 39 34 8 30 6 26 4 I IY IZ I p it c h T / 46 ,2 42 37 ,8 33 06 29 ,4 25 ,2 18 16 14 0 z\(0 0 0 jlI i j 0 □ 0 0 0 0 0 0 0 0 0 {□ 0 0 0 4 CKTS. 12 10 8 6 ,8 12 06 8 ,4 4 2 16 18 13 8 9 6 5 4

full subtractor circuit using decoder and nand ga

Abstract: PLESSEY CLA LC28 full adder 2 bit ic GP144
Contextual Info: RUG 1 .6 'M 1992 GEC PLESS EY . AUGUST 1992 S E M I C O N D U C T O R S CLA70000 SERIES HIGH DENSITY CMOS GATE ARRAYS S u p e rs e d e s M a rc h 1 9 9 2 ed itio n Recent advances in CMOS processing technology and im provem ents in design a rch ite ctu re have led to the