04AUG05 Search Results

Contextual Info: T H IS DRAW ING IS U N P U B L IS H E D . COPYRIGHT 2005 RELEASED FO R PU BLICATIO N AUG ,2 0 0 5 - BY TYCO ELECTRON ICS CORPORATION. J R E V IS IO N S LOC A L L R IG H T S R E S E R V E D . LTR 1.27 1 1 U I U U ÌU h± ± ^ ' U DATE RELEASED APVD DWN 04AUG05

Contextual Info: BAT46 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications. • This diode features very low turn-on volte2 age and fast switching. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges

schottky diode sod-123 marking code L6

Contextual Info: BAT46W Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features very low turn-on volte3 age and fast switching. • This device is protected by a PN junction guard ring against excessive voltage, such as

M1000

Contextual Info: 32.0-46.0 GHz GaAs MMIC Balanced Mixer August 2005 - Rev 04-Aug-05 M1000 Features Chip Device Layout Fundamental Balanced Mixer 7.0 dB Conversion Loss +24 dBm Input Third Order Intercept 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883 Method 2010

Contextual Info: MURS340 & MURS360 New Product Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 400 V, 600 V IFSM 125 A trr 50 ns VF 1.05 V Tj max. 175 °C DO-214AB (SMC) Features Mechanical Data •

A15HB

Contextual Info: 592D Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT , Low Profile, Conformal Coated, Maximum CV FEATURES • New robust 6.3 V ratings for battery operated wireless applications. • New extended range offerings. • 1.0 mm to 2.5 mm height. •

D1002

Abstract: mmic distributed amplifier 84-1LMI XD1002
Contextual Info: 0.05-50.0 GHz GaAs MMIC Distributed Amplifier August 2005 - Rev 04-Aug-05 D1002 Features Chip Device Layout Wide Band Driver Amplifier 9.0 dB Small Signal Gain 5.0 dB Noise Figure 15.0 dB Gain Control +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

SMC MARKING mj

Contextual Info: MURS340 & MURS360 New Product Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 400 V, 600 V IFSM 125 A trr 50 ns VF 1.05 V Tj max. 175 °C DO-214AB (SMC) Features Mechanical Data •

Contextual Info: 2 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION ALL INTERNATIONAL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. LOG DIST p J R E V IS IO N S AS LTR F DESCRIPTION ECR —08 —028597 REVISED DATE DWN APVD 14N0V08 SF KB D D LOGO MARK

at91m55800a33au

Abstract: BGA-176 weight AT91M55800A bms battery
Contextual Info: Features • Utilizes the ARM7TDMI ARM Thumb Processor Core • • • • • • • • • • • • • • • • • • • • • • – High-performance 32-bit RISC Architecture – High-density 16-bit Instruction Set – Leader in MIPS/Watt

Contextual Info: MURS120 Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 200 V IFSM 40 A trr 25 ns VF 0.71 V Tj max. 175 °C DO-214AA (SMB) Features Mechanical Data • • • • • • • Case: DO-214AA (SMB)

30MPA0562

Abstract: 84-1LMI ka-band transistor
Contextual Info: 28.0-31.0 GHz GaAs MMIC Power Amplifier August 2005 - Rev 04-Aug-05 30MPA0562 Features Chip Device Layout tio n Ka-Band 1 W Power Amplifier 27.0 dB Small Signal Gain +30.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

d560r

Contextual Info: 595D Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT Conformal Coated, Maximum CV FEATURES • New extended range offerings. • Large capacitance rating range. • Terminations: Tin 2 standard. • 8 mm, 12 mm tape and reel packaging available per EIA

2.4 ghz transmitter

Abstract: usb pre amplifier circuit diagram 2.4 ghz transmitter rf test RF Transistor Selection 26TX0555 84-1LMI
Contextual Info: 18.0-36.0 GHz GaAs MMIC Transmitter August 2005 - Rev 04-Aug-05 Features Chip Device Layout tio n Sub-harmonic Transmitter Integrated Mixer, LO Doubler/Buffer & Output Amplifier +25.0 dBm Output Third Order Intercept OIP3 35.0 dB Gain Control 2.0 dBm LO Drive Level

L1003

Abstract: ALH369
Contextual Info: 24.0-40.0 GHz GaAs MMIC Low Noise Amplifier L1003 August 2005 - Rev 04-Aug-05 Features Chip Device Layout Balanced Output Stage Excellent Input/Output Match Self-biased Architecture 24.0 dB Small Signal Gain 1.7 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing

180 Degree hybrid

Contextual Info: 20.0-38.0 GHz GaAs MMIC Balanced Mixer August 2005 - Rev 04-Aug-05 26BAM0545 Features Chip Device Layout tio n Fundamental Balanced Mixer 8.0 dB Conversion Loss +25.0 dBm Input Third Order Intercept IIP3 35.0 dB LO to RF Isolation 100% On-Wafer RF Testing

38MPA0547

Contextual Info: 35.0-45.0 GHz GaAs MMIC Power Amplifier 38MPA0547 August 2005 - Rev 04-Aug-05 Features Chip Device Layout tio n Excellent Transmit Output Stage Output Power Adjust 23.0 dB Small Signal Gain +25.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: BAT46W Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features very low turn-on volte3 age and fast switching. • This device is protected by a PN junction guard ring against excessive voltage, such as

Contextual Info: BAT46 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications. • This diode features very low turn-on volte2 age and fast switching. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. + + + + + + + + + + + + + + + + + -f + + + + + +