04JAN2008 Search Results

Contextual Info: ST10F272M 16-bit MCU with 256 Kbyte Flash memory and 20 Kbyte RAM Datasheet − production data Features • ■ ■ 16-bit CPU with DSP functions – 50ns instruction cycle time at 40 MHz max CPU clock – Multiply/accumulate unit MAC 16 x 16-bit multiplication, 40-bit accumulator

FBGA63

Abstract: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C VFBGA63
Contextual Info: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512 Mbit, 528 byte/264 word page, 1.8 V/3 V, NAND Flash memories Features ● ● High density NAND Flash memories – 512 Mbit memory array – Cost effective solutions for mass storage applications NAND interface

6414a

Abstract: st10 Bootstrap AN23 LQFP144 PQFP144 ST10 ST10F272E ST10F272M 3170B
Contextual Info: ST10F272M 16-bit MCU with 256 Kbyte Flash memory and 20 Kbyte RAM Features • ■ ■ 16-bit CPU with DSP functions – 50ns instruction cycle time at 40 MHz max CPU clock – Multiply/accumulate unit MAC 16 x 16-bit multiplication, 40-bit accumulator – Enhanced boolean bit manipulations

6206a

Abstract: stmicroelectronics "serial eeprom" st10 Bootstrap ST10F272MR
Contextual Info: ST10F272M 16-bit MCU with 256 Kbyte Flash memory and 20 Kbyte RAM Datasheet − production data Features • ■ ■ 16-bit CPU with DSP functions – 50ns instruction cycle time at 40 MHz max CPU clock – Multiply/accumulate unit MAC 16 x 16-bit multiplication, 40-bit accumulator

LGA52

Abstract: LGA-52 NAND16GW3C4A NAND08GW3C2A 16G nand JESD97 NAND16GW3 NS4258
Contextual Info: NAND08GW3C2A NAND16GW3C4A 8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory Features • High density multilevel cell MLC Flash memory – Up to 16 Gbit memory array – Up to 512 Mbit spare area – Cost-effective solutions for mass storage

mosfet 4805

Abstract: 24nk55 24NK55Z JESD97 STW24NK55Z
Contextual Info: STW24NK55Z N-channel 550 V - 0.18 Ω - 23 A - TO-247 Zener-protected SuperMESH Power MOSFET Features Type VDSS RDS on ID Pw STW24NK55Z 550 V <0.22 Ω 23 A 285 W • Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■

Contextual Info: ST10F272M 16-bit MCU with 256 Kbyte Flash memory and 20 Kbyte RAM Datasheet − production data Features • ■ ■ 16-bit CPU with DSP functions – 50ns instruction cycle time at 40 MHz max CPU clock – Multiply/accumulate unit MAC 16 x 16-bit multiplication, 40-bit accumulator

Contextual Info: THIS DRAWING IS UNPUBLISH ED. R E l Ea S K TÔR P u B l i ì a Tìò n - BY TYCO ELECTRONICS CORPORATION. COPYRIGHT LOC DIST R E V IS IO N S J AU" RIGHTS R ESER V E D - LTR DESCRIPTION REVISED DATE ECR—0 8 —001 4 23 DWN APVD J.S S.M

Endpoint

Abstract: ST72651 ST72652 ST662A ST7265 ST7SCR
Contextual Info: UM0463 User manual ST7 full-speed USB library Introduction The "ST7 Full-Speed USB Library" hereafter "the library" is designed for ST7 full-speed USB products. With the library, the user of the ST7265 and ST7SCR will have easy access to the embedded USB cell. The library is provided with full source code and it can be used

Numonyx

Abstract: NAND01GWxA2B-KGD NAND01GW3A2B-KGD NAND01GW4A2B-KGD AI07587 NAND01G AI13144
Contextual Info: NAND01GW3A2B-KGD NAND01GW4A2B-KGD Known Good Die, 1 Gbit x 8/x 16 , 528 Byte/264 word page, 3 V, NAND Flash memory Features • High density NAND Flash memory – 1 Gbit memory array – 32 Mbit spare area – Cost effective solutions for mass storage applications

Contextual Info: STW24NK55Z N-channel 550 V - 0.18 Ω - 23 A - TO-247 Zener-protected SuperMESH Power MOSFET Features Type VDSS RDS on ID Pw STW24NK55Z 550 V <0.22 Ω 23 A 285 W • Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■