04P10 Search Results
04P10 Price and Stock
Goford Semiconductor G04P10HEP-100V,-4A,RD(MAX)<200M@-10V,VTH |
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G04P10HE | Cut Tape | 3,858 | 1 |
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Infineon Technologies AG SPD04P10PLGBTMA1MOSFET P-CH 100V 4.2A TO252-3 |
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SPD04P10PLGBTMA1 | Cut Tape | 1,794 | 1 |
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SPD04P10PLGBTMA1 | Bulk | 8,576 | 1 |
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SPD04P10PLGBTMA1 | 8,814 | 1 |
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SPD04P10PLGBTMA1 | 1 |
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SPD04P10PLGBTMA1 | Reel | 2,500 | 2,500 |
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SPD04P10PLGBTMA1 | Cut Tape | 2,874 | 0 Weeks, 1 Days | 5 |
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SPD04P10PLGBTMA1 | 5,000 | 11 Weeks | 2,500 |
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SPD04P10PLGBTMA1 | 5,000 | 1 |
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SPD04P10PLGBTMA1 | 6,674 |
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Hirose Electric Co Ltd DF60-4P-10.16DS(26)CONN HEADER R/A 4POS 10.16MM |
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DF60-4P-10.16DS(26) | Tray | 276 | 1 |
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DF60-4P-10.16DS(26) | 108 |
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Cvilux Corporation CA3304P10I0-NH1.27MM (.050) FEMALE IDC TYPE CO |
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CA3304P10I0-NH | Tube | 104 | 1 |
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Cvilux Corporation CA3404P1000-NH1.27MM (.050) FLAT CABLE - IDC D |
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CA3404P1000-NH | Tube | 33 | 1 |
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04P10 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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BZWD4P273
Abstract: bzwd4 BZW04P111B BZW04 BZW04-111 BZW04-128 BZW04P102 BZW04P102B BZW06P15B BZW04P128
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OCR Scan |
BZW04P102 BZW04P102B BZW04 BZW04102B BZW04P111 BZW04P111B BZW04-111 BZW04P128 BZW04P123B BZWD4P273 bzwd4 BZW04-128 BZW06P15B | |
TDA0161 equivalent
Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
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OCR Scan |
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8ZW04
Abstract: BZW04 5V6 BZWQ4-31 BZW04 PBZW04P6V4 BZW04-7VO BZW04-5V6 C-593 General Instrument
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OCR Scan |
00D3271 T-ll-03 BZW04 DO-41 MIL-STD-202, 8ZW04 BZW04 5V6 BZWQ4-31 PBZW04P6V4 BZW04-7VO BZW04-5V6 C-593 General Instrument | |
04P376BContextual Info: BZW04 SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR STAND-OFF VOLTAGE - 5.8 to 376 Volts 400 Watt Peak Power / 1.0 Watt Steady State REVERSE BREAKDOWN BREAKDOWN TEST STANDVOLTAGE VOLTAGE PART NUMBER CURRENT OFF VBR V VBR(V) IT (mA) VOLTAGE |
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BZW04 04P5V8 04P5V8B 04-5V8 04-5V8B 04P6V4 04P6V4B 04-6V4 04-6V4B 04P7V0 04P376B | |
Contextual Info: 04P10PL G SIPMOS Power-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -100 V R DS on ,max 850 mΩ ID -4.2 A • Logic level • Avalanche rated PG-TO-252-3 • Pb-free lead plating; RoHS compliant ° Qualified according to AEC Q101 |
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SPD04P10PL PG-TO-252-3 PG-TO252-3 04P10PL | |
Contextual Info: 04P10P G SIPMOS Power-Transistor Product Summary Features V DS • P-Channel • Enhancement mode -100 V R DS on ,max 1 Ω ID -4 A • Normal level • Avalanche rated PG-TO252-3 • Pb-free lead plating; RoHS compliant ° Qualified according to AEC Q101 |
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SPD04P10P PG-TO252-3 04P10P | |
04P14
Abstract: 04P15 diode bzw 90 04P19 BZW 04-40B B 04P17 04P11 BZW 20 04P19B 04P64B
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BZW04 DO-41 04P14 04P15 diode bzw 90 04P19 BZW 04-40B B 04P17 04P11 BZW 20 04P19B 04P64B | |
SPD04P10PLContextual Info: 04P10PL G SIPMOS Power-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -100 V R DS on ,max 850 mΩ ID -4.2 A • Logic level • Avalanche rated PG-TO-252-3 • Pb-free lead plating; RoHS compliant Type Package Marking Lead free |
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SPD04P10PL PG-TO-252-3 PG-TO252-3 04P10PL 25angerous | |
MJ 14 x 1,5 - 4Contextual Info: 04P10P G SIPMOS Power-Transistor Product Summary Features V DS • P-Channel • Enhancement mode -100 V R DS on ,max 1 Ω ID -4 A • Normal level • Avalanche rated PG-TO252-3 • Pb-free lead plating; RoHS compliant Type Package Marking Lead free |
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SPD04P10P PG-TO252-3 04P10P JESD22-C101-HBM MJ 14 x 1,5 - 4 | |
Contextual Info: 04P10PL G SIPMOS Power-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -100 V R DS on ,max 850 mΩ ID -4.2 A • Logic level • Avalanche rated PG-TO-252-3 • Pb-free lead plating; RoHS compliant Type Package Marking Lead free |
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SPD04P10PL PG-TO-252-3 PG-TO252-3 04P10PL JESD22-C101-HBM | |
04P10PL
Abstract: 04p10
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SPD04P10PL PG-TO-252 PG-TO252-3-1 04P10PL JESD22-C101-HBM 04P10PL 04p10 | |
Contextual Info: BZW04 SERIES DATA SHEET GLASS PASSOVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 5.8 to 376 Volts 400 Watt Peak Pulse Power / 1.0 Watt Steady State FEATURE Plastic package. Glass passivated chip junction in DO-41 Package 400W peak pulse power capability on 10/1000µs wave-form. |
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BZW04 DO-41 DO-204AL DO-41) MIL-STD-750, 04-299B 04P342 04P342B 04-342B | |
3si1
Abstract: CDRH74 SPC-0704P SPC-0704P-100 SPC-0704P-120 SPC-0704P-150 SPC-0704P-220 SPC-0704P-270 SPC-0704P-390 SPC-0704P-470
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OCR Scan |
SPC-0704P CDRH74 SPC-0704P-100 SPC-0704P-120 SPC-0704P-150 SPC-0704P-18D SPC-0704P-220 SPC-0704P-270 SPC0704P-330 SPC-0704P-390 3si1 SPC-0704P-470 | |
diode bzw 06
Abstract: BZW04-5V8 BZW04-5V8B BZW04P5V8 BZW04P5V8B BZW04P6V4 BZW04P6V4B F126
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OCR Scan |
BZW04-5V8 B/376 BZW04P5V8 diode bzw 06 BZW04-5V8B BZW04P5V8B BZW04P6V4 BZW04P6V4B F126 | |
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04P376BContextual Info: LESHAN RADIO COMPANY, LTD. BZW04 SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE-6.8 TO 440 Volts 400 watt Peak Power / 1.0 Watt Steady State 0.205 5.2 0.160(4.1) 1.0(25.4) MIN 1.0(25.4) MIN 0.034(0.86) DIA 0.028(0.71) FEATURES • Plastic package |
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BZW04 DO-41 204AL 50mVp-p BZW04â 04P376B | |
Contextual Info: 04P10PL G SIPMOS Power-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -100 V R DS on ,max 850 mΩ ID -4.2 A • Logic level • Avalanche rated PG-TO-252-3 • Pb-free lead plating; RoHS compliant Type Package Marking Lead free |
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SPD04P10PL PG-TO-252-3 PG-TO252-3 04P10PL | |
Contextual Info: 04P10PL G SIPMOS Power-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -100 V R DS on ,max 850 mΩ ID -4.2 A • Logic level • Avalanche rated PG-TO-252-3 • Pb-free lead plating; RoHS compliant Type Package Marking Lead free |
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SPD04P10PL PG-TO-252-3 PG-TO252-3 04P10PL | |
04P23
Abstract: 04P28 04P14 04P19 04P33 04P37 04P15 04P128
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OCR Scan |
04P5V8 BZW04-5V8 04P6V4 04-6V4 04P7V0 BZW04-7VO 04P7V8 04-7V8 04P8V5 04-8V5 04P23 04P28 04P14 04P19 04P33 04P37 04P15 04P128 | |
Contextual Info: 04P10P G SIPMOS Power-Transistor Product Summary Features -100 V R DS on ,max 1 Ω ID -4 A V DS • P-Channel • Enhancement mode • Normal level • Avalanche rated PG-TO252-3 • Pb-free lead plating; RoHS compliant Type Package Marking Lead free |
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SPD04P10P PG-TO252-3 04P10P JESD22-A114-HBM | |
BZW 04-40B B
Abstract: 04P13B 04 13B 0448B 04P102B 04P376B 04P376 136B diode bzw 27 04-7V8
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BZW04 BZW04 04P5V8 04-5V8 04P6V4 04-6V4 04P7V0 04-7V0 04P7V8 04-7V8 BZW 04-40B B 04P13B 04 13B 0448B 04P102B 04P376B 04P376 136B diode bzw 27 04-7V8 | |
EIA 549 Class 130B transformer
Abstract: mcf 300.04 capacitor 225 35k 844 SMD av 1.40.00 mkt x2 .01uf NTC 20K honeywell 1000 rpm dc motor 12v 100watt BO 680Y clarostat POTENTIOMETER 73JA SMD MARKING CODE 503b 03028BR
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000pF 000pF 0201ZD103KAT2A 0201ZC103KAT2A 0201YC101KAT2A 0201YC271KAT2A 0201YC471KAT2A 02013A1R0CAT2A 02013A4R7CAT2A 02013A100JAT2A EIA 549 Class 130B transformer mcf 300.04 capacitor 225 35k 844 SMD av 1.40.00 mkt x2 .01uf NTC 20K honeywell 1000 rpm dc motor 12v 100watt BO 680Y clarostat POTENTIOMETER 73JA SMD MARKING CODE 503b 03028BR | |
BZW04
Abstract: 04-213B 0419B 04-342B 04-5V8B 04P17 04P11B 0415B 0437B 0448B
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BZW04 04P5V8 04P5V8B 04-5V8 04-5V8B 04P6V4 04P6V4B 04-6V4 04-6V4B 04P7V0 04-213B 0419B 04-342B 04P17 04P11B 0415B 0437B 0448B | |
DIODE D28Contextual Info: 04P10P G SIPMOS Power-Transistor Product Summary Features V DS • P-Channel • Enhancement mode -100 V R DS on ,max 1 Ω ID -4 A • Normal level • Avalanche rated PG-TO252-3 • Pb-free lead plating; RoHS compliant Type Package Marking Lead free |
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SPD04P10P PG-TO252-3 04P10P 57erous DIODE D28 | |
Contextual Info: 04P10P G SIPMOS Power-Transistor Product Summary Features V DS • P-Channel • Enhancement mode -100 V R DS on ,max 1 Ω ID -4 A • Normal level • Avalanche rated PG-TO252-3 • Pb-free lead plating; RoHS compliant Type Package Marking Lead free |
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SPD04P10P PG-TO252-3 04P10P |