050809 Search Results

G4AD26

Abstract: DB 646 Opto 22 PID control
Contextual Info: I/O MODULES G4 ANALOG RATE INPUT DATA SHEET Form 646-050809 Description The G4AD26 Velocity Input Module provides a single channel of transformer and optically-isolated analog-to-digital conversion. This module offers a wide nominal input range and excellent

Contextual Info: I/O MODULES G4 DATA SHEET Form 582-050809 Description ANALOG RATE INPUT page 1/3 Part Number Description G4AD20 0 to 10.8kHz Rate Input The G4AD20 module provides a single channel of transformer and optically-isolated analog to digital conversion. The nominal input

Contextual Info: *Customer: SPECIFICATION ITEM MODEL REVISION DATE CHIP LED DEVICE WH104-# Rev1.1 050809 [Contents] 1. Features 2. Absolute maximum ratings 3. Electro-optical characteristics 4. Ranks. 5. Characteristic diagrams 6. Soldering profile 7. Outline dimension 8. Packing

G4AD8

Abstract: G4 thermocouple opto 501 G4AD17 G4AD23
Contextual Info: I/O MODULES G4 ANALOG INPUT DATA SHEET page 1/3 Form 422-050809 Description Thermocouple analog modules provide a single channel of transformer and optically- isolated temperature-to-digital conversion. The modules offer wide nominal input range and special over/under range capabilities. The modules also include

G4AD4

Abstract: ICTD G4-ANALOG
Contextual Info: I/O MODULES G4 ANALOG ICTD INPUT DATA SHEET Form 429-050809 Description page 1/2 Part Number G4AD4 Description ICTD Temperature Input The G4AD4 module works in conjunction with any standard ICTD temperature probe and provides a single channel of optically-isolated

G4AD10

Contextual Info: I/O MODULES G4 ANALOG RTD INPUT DATA SHEET Form 427-050809 Description page 1/2 Part Number Description G4AD10 100 Ohms Platinum RTD Input The G4AD10 module provides a single channel of optically-isolated temperature-to-digital conversion. This module also includes

3.3V ZENER DIODE

Abstract: G4AD3
Contextual Info: I/O MODULES G4 ANALOG INPUT DATA SHEET Form 426-050809 Description page 1/4 Part Number G4AD3 Description 4 To 20 mA Input The G4AD3 module provides a single channel of transformer and optically isolated current-to-digital conversion. The nominal input range is 4 to 20 milliamps with an under/over range capability from less than 3 milliamps to greater than 35 milliamps. One of the unique

601 opto

Abstract: G4AD25 hmi 1200 Opto 22 OPTO 22 480D45-12 Transformer 500 volt to 24 a c 24 dc 240 ac volt TO-263-7 Package 321-OPTO
Contextual Info: I/O MODULES G4 ANALOG VOLTAGE INPUT DATA SHEET Form 601-050809 Description The G4AD25 module provides a single channel of transformer and optically-isolated analog-to-digital conversion. The nominal input range is 0 to 100 volts AC or DC with an over range capability

G4ad7

Abstract: G4AD13 g4ad12 G4AD22
Contextual Info: I/O MODULES G4 DATA SHEET ANALOG VOLTAGE INPUT Form 423-050809 Description Opto 22’s voltage input modules provide a single channel of transformer and optically- isolated voltage-to-digital conversion. The modules offer wide nominal input range and special over/under range capabilities. Complete

Contextual Info: I/O MODULES G4 ANALOG INPUT DATA SHEET Form 428-050809 Description page 1/2 Part Number Description G4AD16 0 to 5 Amp AC/DC Input The G4AD16 module provides a single channel of optically-isolated true RMS current-to-digital conversion. The module plugs into any

A1270

Abstract: 55C160 APT84M50B2 APT84M50L MIC4452
Contextual Info: APT84M50B2 APT84M50L 500V, 84A, 0.065Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

PE9815

Contextual Info: BACK VIEW PASTERNACK ENTERPRISES, INC. P.O BOX 16759, IRVINE, CA 92623 PHONE 949 261-1920 FAX (949) 261-7451 WEB ADDRESS: www.pasternack.com E-MAIL ADDRESS: sales@pasternack.ccm PASTERNACK ENTERPRISES COAXIAL & FIBER OPTICS ESTABLISHED 1972 DWG TTTLE PE9815

PE700003-10

Contextual Info: FERRULE SLEEVE HOUSING MATERIALS CERAMIC CERAMIC METAL SPECIFICATIONS Single Mode PC Polish Attenuation Value: 10dB ±10% Typical, ±15% Maximum Operating Wavelength: 1300/1550 nm Insertion Loss: <0.3dB Typical, 1dB Maximum Return Loss: 40 dB Minimum, >50dB Typical

PE7000-10

Contextual Info: BODY CONTACT INSULATOR MATERIALS BRASS NICKEL PLATED GOLD PLATED PTFE SPECIFICATIONS FREQUENCY RANGE: DC TO 2,000 MHz ATTENUATION: 10 dB IMPEDANCE: 50 OHMS ACCURACY: ± .5 dB VSWR: 1.20:1 MAXIMUM AVG. POWER HANDLING CAPABILITY: 1 WATT 1.792 4 5 .5 2 m m

APT66M60B2

Abstract: APT66M60L MIC4452
Contextual Info: APT66M60B2 APT66M60L 600V, 66A, 0.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

APT58M50J

Abstract: MIC4452
Contextual Info: APT58M50J 500V, 58A, 0.065Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

Contextual Info: APT66M60B2 APT66M60L 600V, 70A, 0.09Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

Contextual Info: IMPORTANT NOTICE Dear customer, As from February 2nd 2009, ST and Ericsson have merged Ericsson Mobile Platforms and ST-NXP Wireless into a 50/50 joint venture "ST‐Ericsson". As a result, the following changes are applicable to the attached

Contextual Info: IMPORTANT NOTICE Dear customer, As from February 2nd 2009, ST and Ericsson have merged Ericsson Mobile Platforms and ST-NXP Wireless into a 50/50 joint venture "ST‐Ericsson". As a result, the following changes are applicable to the attached

Contextual Info: IMPORTANT NOTICE Dear customer, As from February 2nd 2009, ST and Ericsson have merged Ericsson Mobile Platforms and ST-NXP Wireless into a 50/50 joint venture "ST‐Ericsson". As a result, the following changes are applicable to the attached

HVQFN36

Abstract: isp1705aet
Contextual Info: IMPORTANT NOTICE Dear customer, As from February 2nd 2009, ST and Ericsson have merged Ericsson Mobile Platforms and ST-NXP Wireless into a 50/50 joint venture "ST‐Ericsson". As a result, the following changes are applicable to the attached

Contextual Info: SAF1508BET ULPI Hi-Speed Universal Serial Bus On-The-Go transceiver Rev. 2 — 23 July 2012 Product data sheet 1. General description The SAF1508BET is a UTMI+ Low Pin Interface ULPI Universal Serial Bus (USB) transceiver that is fully compliant with Universal Serial Bus Specification Rev. 2.0,

isp1705aet

Abstract: ISP1705 isp1705 Hi-Speed Universal Serial Bus host control ISP1705HN HVQFN36 JESD22-A114D MO-220 SMD 6PIN IC MARKING CODE
Contextual Info: ISP1705 ULPI Hi-Speed USB transceiver Rev. 01 — 13 June 2008 Product data sheet 1. General description The ISP1705 is a UTMI+ Low Pin Interface ULPI Hi-Speed Universal Serial Bus (USB) transceiver that is fully compliant with Universal Serial Bus Specification Rev. 2.0,

Contextual Info: APT28M120B2 APT28M120L 1200V, 29A, 0.53Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure