0535BG5 Search Results
0535BG5 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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74LS04C
Abstract: gd5f 80515K m8ab
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fl23Sfci 80515K 16-bit 53SbD5 SAB80515K 2-12MHZ 74LS04 i10pF 74LS04C gd5f m8ab | |
Contextual Info: Infineon technologies Uni- and Bipolar Hall 1C Switches for Magnetic Field Applications TLE 4905 L; TLE 4935 L; TLE 4935-2 L; TLE 4945 L; TLE 4945-2L Bipolar 1C Features • • • • • • Temperature compensated magnetic performance Digital output signal |
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4945-2L Q67006-A9120 Q67006-A9112 Q67006-A9143 Q67006-A9163 E35bG5 D1343D1 AEA02510 | |
Contextual Info: SIEMENS C166-Family of High-Performance CMOS 16-Bit Microcontrollers C163-L Data Sheet C163-L • • • • • • • • • • • • • • 16-Bit Microcontroller High Performance 16-bit CPU with 4-Stage Pipeline - 80 ns Instruction Cycle Time at 25 MHz CPU Clock |
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C166-Family 16-Bit C163-L 16-Priority-Level P-TQFP-100-3 2IA-BIDI100X | |
Contextual Info: S IE M E N S BF 799W NPN Silicon RF Transistor • For linear broadband amplifier applications up to 500MHz • SAW filter driver in TV tuners Type Marking Ordering Code Pin Configuration BF 799W LKs Q62702-F1571 1=B Package 2 =E 3 =C SOT-323 Maximum Ratings |
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500MHz Q62702-F1571 OT-323 0535bG5 235fc 1217EC 100MHz | |
74ABT244
Abstract: Q67100-Q2004 26/FEE
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72-Bit 721000GS-60/-70 fl235b05 007161D 74ABT244 Q67100-Q2004 26/FEE | |
Contextual Info: S IE M E N S PNP Silicon High-Voltage Transistor BFN 21 • Suitable for video output stages in T V sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary type: B F N 20 NPN |
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Q62702-F1059 OT-89 35L05 fl235b05 0535bG5 | |
Contextual Info: SIEMENS BCR 148 NPN Silicon Digital Transistor ►Switching circuit, inverter, interface circuit, driver circuit » Built in bias resistor Ri=47kfl, R2=47kfi Type Marking Ordering Code Pin Configuration BCR 148 WEs Q62702-C2261 1 =B Package 2= E 3=C SOT-23 |
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47kfl, 47kfi) Q62702-C2261 OT-23 0235b05 Q12Q7b5 015D7bB | |
Contextual Info: SIEMENS 256K X 16-Bit EDO-Dynamic RAM HYB 514265BJ-400/40/-45/-50 HYB 314265BJ L -45/-50 Preliminary Information Power Supply: • 262 144 words by 16-bit organization • 0 to 70 °C operating temperature • EDO - Hyper Page Mode • Performance: HYB 514265BJ-400 |
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16-Bit 514265BJ-400/40/-45/-50 314265BJ 514265BJ-400 514265BJ-40 514265BJ-45 514265BJ-50 14265B | |
Contextual Info: SIEMENS High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C515A / 83C515A-5 Preliminary SAB 83C515A-5 SAB 80C515A • • • • • • • • • • • • • • • • Microcontroller with factory mask-programmable ROM Microcontroller for external ROM |
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80C515A 83C515A-5 80C515A 80C515A/83C515A-5, 83C515A-5 80C51 16-bit 80C515A/83C515A-5 MCS01500 | |
SIEMENS 3 TB 40 12 - 0A
Abstract: smd transistor 2T5 SIEMENS 3 TB 40 10 - 0A SIEMENS 3 TB 40 17 - 0A
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Q67100-H6392 P-LGC-44- 00bfl701 SIEMENS 3 TB 40 12 - 0A smd transistor 2T5 SIEMENS 3 TB 40 10 - 0A SIEMENS 3 TB 40 17 - 0A | |
TDA5850Contextual Info: 47E 5 • ÔZ3SbOS 003457^ □ « S I E G T - S H \ SIEMENS SIEMENS AKTI ENGESELLSCHAF Video Switch TDA 5850 Bipolar 1C Features • • • Standard connection for VTR CCIR and Peri TV sets Input clamping Positive and negative video outputs The TDA 5850 is a switchable video amplifier with connections for the French and IEC |
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Q67000-A1775 fi23SbD5 GD34EÃ TDA5850 TDA5850 | |
Contextual Info: SIEMENS HITFET BTS 133 Smart Lowside Power Switch Features Product Summary • Logic Level Input Drain source voltage ^DS 60 V • Input Protection ESD On-state resistance ^)S(on) 50 mi) • Thermal Shutdown Current limit fo(lim) 21 A • Overload protection |
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a53Sb05 | |
Contextual Info: SIEMENS Silicon Schottky Diodes BAS 40. • General-purpose diodes for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing € Available with C E C C quality assessm ent ESD : Electrostatic discharge sensitive device, observe handling precautions! |
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Q62702-D339 OT-23 CHA07002 Q62702-D980 Q62702-D979 Q62702-D978 EHAQ7004 EHA07006 0S35bOS 0120SÃ |