053SBO Search Results

Contextual Info: 47E D • SIEM ENS 053SbOS 0034337 T ■ SIEG SIEMENS AKTIENGESELLSCHAF TV Stereo Tone Control 1C with Quasi-Stereo Section, Channel 1/2 Switch, SCART Input, and I2C Bus Control Preliminary Data TDA 6200 Bipolar IC Features • Treble, bass, balance, and volume control by means of an integrated digital-to-analog

Contextual Info: SIEMENS ICs for Communications LNA/MIXER P M B 2332 Version 1.2 Preliminary Specification 06.96 T2332-XV12-P2-7600 053SbO S 0 C H flb 4 3 7bfc> E d itio n 06 .96 A u s g a b e 06 .9 6 P u b lis h e d b y S ie m e n s A G , B e re ic h H a lb le ite r, M a rk e tin g K o m m u n ik a tio n , B ala n s tra B e 73,

8D139

Abstract: bd139 B0139 TRANSISTOR BD 137 transistor BD 378 TRANSISTOR BD 137-10 transistor a110 B0137 D106-V2 BD135
Contextual Info: 2SC D • 053SbOS 0004332 4 « S I E G ^ - NPN Silicon Transistors ■ T ^ Ï'O T — BD 135 BD 137 SIEMENS AKTIEN6ESELLSCHAF- BD 139 For AF driver and ou tp u t stages o f m edium performance BD 135, BD 137, and BD 139 are epitaxial NPN silicon planar transistors in TO 126

yt 1208 diode

Abstract: yt 1208 diode b14 624 DIODE B12 50/yt 1208 diode A1700 C67078-A1700-A2 B12 diode
Contextual Info: ÖÖD D • 053SbOS D a m a l s b 88D 14912 d ISIE G T-3*7-/3 BUZ 213 SIEMENS AKTIENGESELLSCHAF -Main ratings Draln-source voltage = soov Kis Continuous drain current = 8,5 A h Draln-source on-reslstance ^OS on = 0,6 Q Description Case FREDET with fast-recovery reverse diode, N-channel, enhancement mode

TRANSISTOR BFW 11

Abstract: bfw 10 transistor GPA 76 transistor 2sc 546 transistor bfw 83
Contextual Info: I ESC D • 053SbOS 0004734 2 ■ S I E û ! NPN Silicon RF Broadband Transistor BFW 93 design SIEMENS AKTIENÔESELLSCHAF Not for new CAI - - BFW 93 is an epitaxial NPN silicon planar RF transistor in a plastic packageof low capacitance, similar to TO 119 50 B 3 DIN 41867 . The transistor is particularly suitable for use

NAD 140

Contextual Info: ÖÖD D • 053SbOS Q O H m a b MSIEfí 88D 14912 ~ 5 ~ r - 3 ^ - / 3 BUZ 213 SIEMENS AKTIENGESELLSCHAF -Main ratings N-Channel = 500 V Draln-source voltage Kis = 8,5 A Continuous drain current 4 Draln-source on-reslstance ^OS on a 0,6 a Description Case

siemens 230 98 O

Abstract: siemens 230 siemens EC 230 98 siemens 230 98 a1105 T-39-13
Contextual Info: 47E D 053SbOS 0051755 7 B I S I E G SBEMENS SIEMENS AKTIENGE SE LLS CH AF 7 ^ 3 9 - 0 BUZ 230 SIPMOS Power MOS Transistor Vos /„ •O S o n = 1000 V = 5.5 A = 2.0 fi • N channel • FREDFET • Enhancement mode • Package: TO-204AA (TO -3)1) Type

BFW93

Abstract: transistor bfw 88 transistor 2sc 546 BFW 72 Q62702-F365 BFW 60
Contextual Info: I ESC D • 053SbOS 0 0 0 4 7 3 4 2 ■ S I E û NPN Silicon RF Broadband Transistor design SIEMENS A K T I E N ô E S E L L S C H A F D Not for new CAI BFW 93 -3 1 -1 5 BFW 9 3 is an epitaxial NPN silicon planar RF transistor in a plastic packageof low capacitance,

Contextual Info: • ñ 2 3 S bO S GDfllSHR Tb4 SIEMENS PROFET BTS 542 D2 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Features • • • • • • • • Overload protection

Contextual Info: SIEMENS IS D N S u b s c rib e r A c c e s s C o n tro lle r fo r U pn-In te rfa c e T e rm in a ls S m a rtL in k -P PSB 2197 Preliminary Data 1 CMOS 1C Features • Cost/performance-optimized Upn-interface transceiver, compatible to PEB 2096 OCTAT-P and

Siemens MTT 95 A 12 N

Abstract: Siemens MTT 95 A 16 N SDA3412X SDA3412 SMD TRANSISTOR N13 Siemens MTT 95 A 08 N N7 2C SMD Transistor transistor smd marking JR P5 smd transistor Siemens MTT 40 A 12 N
Contextual Info: bSE D • fiS3SbOS DQS3SM3 b2b M S I E G SIEM EN S _ SIEMENS AKTIENGESELLSCHAF ■ ' GHz PLL with I 2C Bus and In-Lock Detector SDA 3412X Bipolar 1C Preliminary Data Features • 1-chip system for MPU control I 2C bus • 1 fixed, 3 programmable chip addresses

MARKING CODE SMD JW

Abstract: TXC CXO A51AC isdn modem 2S34 chmn m1p7 SAB-R3000
Contextual Info: SIEMENS AKTIEN6ESELLSCHAF 47E D • ô53St.0S QQBbbSa Ô m S l E ú SAB 82532 1 INTRODUCTION The Enhanced Serial Communication Controller ESCC2 SAB 82532 is a data communication device with two symmetrical serial channels. It has been designed to implement high-speed com­

siemens sab 82538

Abstract: 3tb siemens T-0657 SiEMENS PM 350 98 SAB 80188 QD70 SIEMENS ESCC8 1fa MARKING processor hbt 00 04 g Q67100-H6441
Contextual Info: SIEM ENS Enhanced Serial Communication Controller ESCC8 SAB 82538 SAF 82538 Preliminary Data 1 CMOS 1C General Features Serial Interface • Eight independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each

Y2923

Abstract: 2sc 965 transistor b0961 Q62702-S154 lfe10
Contextual Info: 5SC D • û23SbOS GGQM'îlS b « S I E G 7 ^ ? - ^ 3 2 N 4033 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF 2 N 4033 is an epitaxial PNP silicon planar transistor in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistor is particularly intended for

Contextual Info: SIEMENS Extended Line Card Interface Controller ELIC 1 PEB 20550 PEF 20550 Features Switching EPIC®-1 • Non-blocking switch for 32 digital (e.g. ISDN) or 64 voice subscribers - Bandwidth 16, 32, or 64 kbit/s - Two consecutive 64-bit/s channels can be

Contextual Info: SIEMENS NPN Silicon Darlington Transistor BC 517 • High current gain • High collector current • Complementary type: BC 516 PNP Type Marking Ordering Code P inC onfigur ation 1 2 3 Package1) BC 517 - Q62702-C825 C TO-92 B E Maximum Ratings Parameter

Contextual Info: 47E SIEM ENS D • 6¿35b05 SIEMENS 003M4G7 5 »SIEG AKTIENGESELLSCHAF T-nrvTkv, VCR Stereo Processor TDA 6620 Preliminary Data Bipolar 1C Features • • • • Inexpensive solution for VCR sets due to a low cost external writing Identification signal based on the PLL-principle

T60403-L4021

Abstract: function of lts 543 ic OB35 ltp250 T1605 vogt 543 VOGT B1 65495
Contextual Info: PEB 2084 Revision History: Current Version: Data Sheet 07.95 Previous R eleases: Preliminary Technical Manual 2 .9 4 Subjects major changes since last revision P age P age (in previous (in current Version) Version) 11 8 Figure 1, ID O = Output and Input

Contextual Info: SIEMENS Silicon Schottky Diodes BAS 125 . • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage ESD: Electrostatic discharge sensitive device, observe handling precautions!

marking code E3t

Contextual Info: SIEMENS NPN Silicon AF Transistors BCW 65 BCW 66 • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW 67, BCW 68 PNP Type BCW BCW BCW BCW BCW BCW 65 65 65 66 66 66 A B C F G H Marking

N2A-2

Abstract: RF1X D3/HS 2303
Contextual Info: SIEMENS ICs for Communications Dual 2GigaPLL PMB 2303 V1.0 Target Specification 4.95 fl23SbOS GG7fll07 314 PMB 2303 Revision History Previous Releases: Page 4.95 ♦ none Subjects changes since last revision Data Classification Maximum Ratings Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible

Contextual Info: S IE M E N S BAV 99W Silicon Switching Diode Array >Connected in series 1For high speed switching applications C1/A2 nr T J Type Marking Ordering Code Pin Configuration BAV 99W A7s Q62702-A1051 1=A1 2=A2 Package 3=C1/C2 SOT-323 Maximum Ratings per Diode Symbol

SDA 3526-2

Contextual Info: bOE ]> • fi23SbQS 0 0 4 ^ 4 1 ^ S IE M E N S T71 M S I E S t ^ - ,3 - z 6 SIEMENS AKTIENGESELLSCHAF Nonvolatile Memory 2-Kbit E2PROM with PC-Bus and 2 K Write Protection SDA 3526-2 Preliminary Data MOS 1C Features • Word-organized programmable nonvolatile memory in

514100aj-60

Abstract: HYB514100AJ-80 HYB514100A-80 514100AZ-60 4MX1 aram
Contextual Info: • aaasbos SIEME qqhqmqo r- e i s i e g SIEMENS A KTIEN G ESELLSCHAF • 4Mx 1-Bit Dynamic RAM M7E D T -¥ 6 -Z 3 -l5 HYB 514100A-60/-70/-80 Advance Information • 4194 304 words by 1-bit organization • 0 to 70 ‘C operating temperature • Fast access and cycle time