BD139 Search Results

bd139

Abstract: BD135 BD137 bd139 140 BD139 circuits bd139 Complement BD139 silicon transistors BD135-10 BD135-16 BD139-10
Contextual Info: SavantIC Semiconductor Product Specification BD135 BD137 BD139 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·High current ·Complement to type BD136/138/140 APPLICATIONS ·Driver stages in high-fidelity amplifiers and television circuits

Contextual Info: BD135T / BD137T / BD139T NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are designed as Audio Amplifier and Drivers Utilizing. E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25 OC Parameter Symbol Value BD135T BD137T BD139T Unit Collector Emitter Voltage

BD139

Abstract: BD139 N bd137 BD139-25 BD139 p BD135-BD137-BD139 bd135 N BD139 silicon transistors
Contextual Info: MCC BD135 BD137 BD139
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# HDWXUHV • • Power Transistors NPN Silicon 45,60,80 Volts DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140

Contextual Info: r 7 z S G S - m O M S O BD135 BD137/BD139 N Ä T # [MO gfô l[L[iera®*S NPN SILICON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD135, BD137 and BD139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic package, designed for audio amplifiers

bd139

Abstract: M/triac bd139 bd135
Contextual Info: BD135 BD139 NPN SILICON TRANSISTORS • STMicraelectronics PREFERRED SALESTYPES DESCRIPTION The BD135 and BD139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi

transistor BD139 N

Abstract: power transistor bd139 BD139 amplifier BD139 BD139 N TRANSISTOR NPN BD139 BD137-16 to126 case BD135-10 BD137-10
Contextual Info: DATA SHEET BD135 BD137 BD139 NPN SILICON TRANSISTORS JEDEC TO-126 CASE DESCRIPTION: The Central Semiconductor BD135, BD137, and BD139 types are NPN Silicon Epitaxial Planar Transistors designed for audio amplifier and switching applications. MAXIMUM RATINGS: TC=25°C unless otherwise noted

CDIL BD139

Abstract: CDIL BD137 bd139 140 BD135 CDIL BD137 parameters bd135 BD136 mw 137 BD137 BD139
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-126 SOT-32 Plastic Package BD135, 137, 139 BD135, BD137, BD139 NPN PLASTIC POWER TRANSISTORS Complementary BD136, 138, 140

philips power transistor bd139

Abstract: BD139 N bd139 application note BD139 philips BD135 philips BD140 npn power transistor bd139 TRANSISTOR BD139 TRANSISTOR NPN BD139 TRANSISTOR NPN BD140
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD135; BD137; BD139 NPN power transistors Product specification Supersedes data of 1997 Mar 04 1999 Apr 12 Philips Semiconductors Product specification NPN power transistors BD135; BD137; BD139 FEATURES

BD139 application

Abstract: BD139 N bd139 BD135 BD139 p of bd139 bd135 N BD139-25 BD136
Contextual Info: MCC BD135 BD137 BD139
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components HDWXUHV • • DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140

bd139

Abstract: BD139 p BD135-BD137-BD139 bd135 N BD139 N BD139-25 BD136 bd137
Contextual Info: MCC BD135 BD137 BD139
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# HDWXUHV • • Power Transistors NPN Silicon 45,60,80 Volts DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140

BD139H

Contextual Info: SEMICONDUCTOR BD139 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A B FEATURES ・High Current. Max. : 1.5A ・DC Current Gain : hFE=40Min. @IC=0.15A ・Complementary to BD140. D C E F G H DIM A B C D E F G H J K L M N O P J

transistor BD 141

Abstract: BD139G bd139 140 BD139-25 BD139 NPN transistor Bd139 operation of BD 139 bd135 diagram
Contextual Info: BD135, BD137, BD139 Plastic Medium Power Silicon NPN Transistor This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http://onsemi.com Features

BD139 N

Abstract: BD135,BD137,BD139 BD139 bd135 N BD137 BD135-BD137-BD139 BD135 power transistor bd135 power transistor bd139 power transistor bd137
Contextual Info: BD135 BD137 BD139 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 HDWXUHV • • Power Transistors NPN Silicon 45,60,80 Volts DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140

BD139 N

Abstract: TRANSISTOR TC 137 BD135 LB 137 transistor power transistor bd135 BD139 BD139 NPN transistor bd135 N BD135 NPN transistor TRANSISTOR NPN BD139
Contextual Info: BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD136, BD 138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol C ollector Base Voltage :B D 1 3 5 : BD137 : BD139 C ollector E m itter V o lta g e : BD135

BD139 N

Abstract: BD139 bd137 BD135,BD137,BD139 bd135 N BD135 power transistor bd135 BD135-BD137-BD139 BD139 p BD139 silicon transistors
Contextual Info: MCC BD135 BD137 BD139
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# HDWXUHV • • Power Transistors NPN Silicon 45,60,80 Volts DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140

Contextual Info: r Z 7 S G S -T H O M S O N ^ 7 # 5MŒ HHi TT!FM0©S BD135 B D137-BD139 MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS D E S C R IP T IO N The BD135, BD137, BD139 are silicon epitaxial pla­ nar NPN transistors in Jedec TO-126 plastic package, designed for audio amplifiers and drivers

BD135

Abstract: BD135 BD137 BD139
Contextual Info: BD135 / BD137 / BD139 NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-126 High current Complement to BD136, BD138 and BD140 1Emitter 2Collector 3Base CLASSIFICATION OF hFE 1

bd139 pin out

Abstract: BD139 application BD139 N BD139 bd135 n power transistor bd139 bd140
Contextual Info: MCC BD135 BD137 BD139
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components  HDWXUHV • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information)

BD139

Abstract: BD139-10 bd140-10
Contextual Info: BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features • Products are pre-selected in DC current gain Application ■ General purpose 3 Description 1 SOT-32 These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed

BD135,BD137,BD139

Abstract: BD139 TRANSISTOR NPN BD139 BD139 amplifier BD139 NPN rBE BD135 BD135 BD137
Contextual Info: BD135, BD137, BD139 NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are designed as Audio Amplifier and Drivers Utilizing. E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25 OC Parameter Symbol BD135 BD137 BD139 Unit Collector Emitter Voltage

BD139-11

Abstract: BD139 BD135C
Contextual Info: BD135 BD137 BD139 SILICON PLANAR EPITAXIAL POWER TRANSISTORS G eneral p u rp o s e n-p-n tra n s is to rs in S O T -3 2 p la s tic p a c k a g e , re c o m m e n d e d fo r d riv e r stages in h i-fi a m p lifie rs and te le v is io n c irc u its . T h e B D 1 3 6 , B D 1 3 8 and B D 1 4 0 are c o m p le m e n ta ry to th e B D 1 3 5 , B D 1 3 7 and B D 1 3 9 re s p e c tiv e ly .

BD139

Abstract: BD137 philips power transistor bd139 BD135-BD137-BD139 BD139 philips BD139 PIN DATA BD137-10 BD135-10 BD139 circuits BD135-16
Contextual Info: Philips Semiconductors Product specification NPN power transistors BD135; BD137; BD139 FEATURES PINNING • High current max. 1.5 A PIN • Low voltage (max. 80 V). 1 emitter 2 collector, connected to metal part of mounting surface 3 base DESCRIPTION APPLICATIONS

power transistor bd139

Abstract: BD139 transistor BD139 amplifier power transistor bd137 transistor bd137 TRANSISTOR BD139 TRANSISTOR NPN BD139 BD139 power transistor bd135 BD139 NPN transistor download datasheet
Contextual Info: DATA SHEET BD135 BD137 BD139 NPN SILICON TRANSISTORS JEDEC TO-126 CASE DESCRIPTION: The Central Semiconductor BD135, BD137, and BD139 types are NPN Silicon Epitaxial Planar Transistors designed for audio amplifier and switching applications. MAXIMUM RATINGS: TC=25°C unless otherwise noted

Contextual Info: BD139RS Transistors Darlington Independent Power Module Circuits Per Package1 Isolated Case Y/N Yes V(BR)CEO (V)1.0k V(BR)CBO (V)1.0k I(C) Max. (A)50 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)125õ h(FE) Min. Current gain.100 @I(C) (A) (Test Condition)50