055 MOTOROLA Search Results

68HC11

Abstract: AD10 AD11 AD12 AD14 HC11
Contextual Info: PSD GPLD PRIMER - PSD6XX/7XX/8XX Application Note 055 By Mark Rootz and Tim Wilkerson Abstract A PSD Programmable System Device is a peripheral device, which provides memory, logic, I/O, and other functions to a microcontroller unit (MCU). Internally, the PSD is a collection of programmable logic

wideband fsk receiver

Contextual Info: MOTOROLA SEMICONDUCTOR m h m i MC13055 TECHNICAL DATA Advance Information Wideband FSK Receiver T h e M C 13 055 is intended fo R F d ata link system s using c a rrie r frequencies up to 40 M H z a nd FSK fre q ue n cy sh ift keying data rates up to 2.0 M Baud

transistor d 2689

Abstract: MRF497
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 40 W NPN SILICON RF POWER TRANSISTOR . . . desig ne d fo r 12.5 vo lt VHF large-signal pow e r a m p lifie r a p p li­ ca tio n s in co m m ercial and in d u stria l e qu ipm e n t, o pe ra ting in the 25 to 50 MHz fre q u en cy range.

AN1955

Abstract: A113 AVX08051J1R0BBT AVX08051J1R5BBT AVX08051J2R2BBT AVX08051J6R8BBT MHVIC2114R2 TAJA105K035R
Contextual Info: MOTOROLA Order this document by MHVIC2114R2/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifier The MHVIC2114R2 wideband integrated circuit is designed for base station applications. It uses Motorola’s newest High Voltage 26 to 28 Volts LDMOS IC

MC1723

Abstract: mc1723 ic AMO 0210 DM 0265 R 1E75 MC1723CL schematic of mc1723 MC1723cg MC1723G 15 1e75
Contextual Info: MOTOROLA SC -CTELECOMJ 14E D I b3b?aS3 DQfllflSb fl | T - g g -U -2 -S O RDERING INFORMATION Devfe* MC1723CD MC1723CG MC1723CL MC1723CP MC1723G MC1723L Altern ate Temperature Range TO to 0*0 to crc to (re to -55°C to - 55°C to LM723CH, pA723HC LM723CJ, MA723DC

A113

Abstract: AN1955 AVX08051J1R0BBT AVX08051J1R5BBT AVX08051J2R2BBT AVX08051J6R8BBT MHVIC2114R2 TAJA105K035R
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MHVIC2114R2/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifier The MHVIC2114R2 wideband integrated circuit is designed for base station

MRF477

Abstract: MRF477 equivalent mrf477 transistor 2 SC 2673 Q 1N4719 transistor MRF477 1S75 221A-04 RF POWER TRANSISTOR NPN 1270H
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D L3ti72Sl4 □D'mb'iE 4 MOTOROLA MOTb T -S 3 -/Í SEMICONDUCTOR TECHNICAL DATA MRF477 T h e R F L in e 40 W (PEP) - 3 0 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILIC ON . . . designed prim arily for application as a high-power linear

SG3526

Abstract: sg1526 7m 0880 IC SG3526J 033S sg1526 power supply
Contextual Info: SG1526 SG2526 SG3526 MOTOROLA • SEMICONDUCTOR TECHNICAL DATA P U L S E W ID T H M O D U L A T IO N C O N T R O L C IR C U IT T h e S G 1 5 2 6 is a h ig h p e rfo rm a n c e p u ls e w id th m o d u la to r in te ­ g ra te d circu it in te n d e d for fixe d fre q u e n c y s w it c h in g r e g u la t o r s a n d

AMO 0210

Abstract: TDA4601 tda4601 SMPS CIRCUIT DIAGRAM bsc flyback transformer tv 1E75 1N4003 1N4006 ANE002 DM 0265 R 2x24 transformer 220
Contextual Info: MOTOROLA m SEMICONDUCTOR TDA4601 TECHNICAL DATA A d v an ce Inform ation FLYBACK CONVERTER CONTROL CIRCUIT C O N T R O L 1C F O R L IN E - IS O L A T E D F R E E R U N N IN G F L Y B A C K C O N V E R T E R SIL IC O N M O N O L IT H IC IN T EG R A T E D C IR C U IT

MRD821

Abstract: diode gi 3106 DIN5030 MLED81
Contextual Info: MOTOROLA • i SE M IC O N D U C TO R TECHNICAL DATA Photo Detector M R D 821 Diode Output This device ¡s designed fo r infrared rem ote control and other sensing applications, and can be used in conjunction w ith the MLED81 infrared em itting diode. •

017Q

Abstract: MOTOROLA TRANSISTOR 210
Contextual Info: MOTOROLA SC XSTRS/R F MbE D b3b?254 00*^73 b inoTt MOTOROLA Order this data sheet by MRA1618-35H/D SEMICONDUCTOR TECHNICAL DATA The RF Line M icrow ave Power Transistor . . . designed primarily for wideband, large signal output and driver amplifier stages in the

a39 zener diode

Contextual Info: MOTORCLA SC IME D I b3b?2S4 00^031? 2 | XSTRS/R F 7 ~ -3 7 - / 3 MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA MTP25IM06E Designer's Data Sheet TM OS IV Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced " E " series of TM O S power M O SFET s is designed to withstand high

80c196

Abstract: intel 80c196 microcontroller psd3xx 80C31 intel 80C198 80c251 zilog z80 A815 68hc711 80C196 intel
Contextual Info:

    
 Presentation #4: PSD Interface to Popular MCUs
 Return to Main Menu wsi98web4a.ppt
  1  • • • • • • • • • • • • • • • Overview PSD fit with Popular MCUs Page 80C31/51 Based MCUs Intel, Philips, Dallas, Etc.

lm337 so-8

Abstract: LM137-LM237-LM337 motorola LM337H
Contextual Info: MOTOROLA SC -CTELECOnJ- 14E D I k3b72S3 0001755 0 | L M 1 3 7 f ä M O T O R O L A L M 2 3 7 L M 3 3 7 Specifications and Applications Information THREE-TERMINAL ADJUSTABLE OUTPUT NEGATIVE VOLTAGE REGULATORS = to se t th e o u t p u t v o lta g e . Further, th e y e m p lo y in te rn al curren t

BD 266 S

Abstract: BD140 pnp transistor BD 136 to225a transistor bd 140 -16 BD136 transistor 136 138 140 BD136.6
Contextual Info: M OT O R C L A SC XSTRS/R 15E 0 § F b3b725M G0ÖM70S 3 | BD136,-6,-10,-16 BD138,-6,-10,~16 BD140,-6,-10,-16 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR 1.S AMPERE POWER TRANSISTOR • . . designed for use as audio amplifiers and drivers utilizing

7721-1PPS

Abstract: 7721-7PPS B51547F019 7721-13N 7721-6PPS B51547F005 7721-5PPS 7721-8PPS B51547F011 B51547F003
Contextual Info: Standard Products - Insulating Shoulder Washers Home | Contact Us | About Aavid | Sales Rep Log In -Useful Links- Search by part # Insulating Shoulder Washers RoHS Compliant Check distributor part inventory ● ● ● ● 40% glass filled polyphenylene sulfide PPS .

Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA vvc DUAL VOLTAGE-VARIABLE CAPACITANCE DIODE SILICON EPICAP DIODE . . . designed for F M tuning, general frequency control and tuning, or any top-of-the-line application requiring back-to-back diode configu rations for m in im u m signal d istortio n and detuning. Th is device is

s0250

Abstract: IC LM 7905 Regulator Ic 7905 pin details to92 2ampere transistor LM 323K A770 LM123A REGULATOR IC 7905 OMS 1410 AISI 1045
Contextual Info: _ MOTOROLA SC {TELECOM} Q M O T O R O L 14E D I b3b7SS3 DQaiTMT s I LM123, LM123A LM223, LM223A LM323, LM323A A " F S g - lH ^ S p ecification s and A p plications Inform ation 3-AMPERE, 5 VOLT POSITIVE VOLTAGE REGULATORS S IL IC O N M O N O LIT H IC

2n6082

Contextual Info: T -3 2 H I MOTOROLA SC XSTRS/R F MbE D b 3 b ?2 S 4 00*14153 2 « N O T b MOTOROLA I SEMICONDUCTOR ^ TECHNICAL DATA 2N6082 The R F L in e 25 W - 175 M H z RF POWER TRANSISTOR NPN SILICO N NPN S IL IC O N R F P O W ER T R A N S IS T O R S . . . designed for 12.5 V o lt V H F large-signal am plifier applications

MJ10011

Abstract: S-80W
Contextual Info: M O T O R O L A SC XSTRS/R F 12 E D § b 3 b ? e S M O G Ó S O B T Û | MOTOROLA SEMICONDUCTOR TECHNICAL DATA DARLINGTON HORIZONTAL DEFLECTION TRANSISTOR 8.0 A M P E R E NPN SILICON D ARLINGTON POWER TRANSISTOR . . . specifically designed for use in deflection circuits.

K1118

Abstract: MJ3029 transistor k 1119 transistor K 3532 d 1669 transistor MJ2955 300 watts amplifier MJ2955A he01 Ic as20
Contextual Info: M Q T O R C L A SC XSTRS/R F 12E D | b3 b 7 E 5 4 0084*177 3 | M J2955 — MOTOROLA S e e P g r 3 -6 M J2955A — SEMICONDUCTOR See P g .3 -9 TECHNICAL DATA MJ3029 NPN SILICON HIGH-VOLTAGE TRANSISTOR 5 AMPERE POWER TRANSISTOR NPN SILICON . . . designed for T V horizontal and vertical deflection amplifier

D895

Abstract: transistor Bd 699 transistor BD901 BD695A BD895 BD897A D-897 bd897 motorola
Contextual Info: MOTORCLA sc XSTRS/R F lE E D I b3b?254 GGfl47bS T | BD895, BD895A BD897, BD897A BD899, BD899A BD901 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC POWER SILICON NPN DARLINGTONS DARLINGTON 8 AMPERE NPN SILICON POWER TRANSISTORS . for use as output devices in complementary general-purpose

MRF5174

Abstract: IR 21025
Contextual Info: 4bE D M O T O R O L A SC X S T R S / R F b3b?2S4 OOISQM? 5 IMOTfe MOTOROLA SEM ICONDUCTOR TECHNICAL DATA The RF Line 2 W —400 MHz 2 RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed primarily for wideband large-signal driver and predriver amplifier stages in the 260*600 MHz frequency range.

BUZ90

Abstract: BUZ90 MOSFET LSE 0405
Contextual Info: MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA BUZ90 P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancement-Mode Silicon Gate T his T M O S IV P o w e r FET is d e s ig n e d fo r high vo ltag e, high sp eed, lo w loss p o w e r sw itch in g a p p licatio n s such as