05A5443 Search Results

SMV1204

Abstract: SMV1200-02 SMV1200-04 SMV1200-05 SMV1200-07 SMV1201-16 SMV1201-20 SMV1204-99 SMV1411
Contextual Info: Surface-Mounted Varactor and Multiplier Devices and Capacitors alpha IN] / SEMICONDUCTOR 4AE D 05A5443 0001334 40f l T -& 7-h *A LP Features • ■ ■ ■ ■ Description The traditional quality of Alpha varactor devices is available for volume production operations in the form of

Contextual Info: ALPHA IN»/ SEMICONDUCTOR 4ÛE 1> • 05A5443 D0D1133 7QT ■ ALP " T ‘O ' 1 ^ 7 High Frequency SOT’s Features: ■ Industry Standard Footprint ■ High Frequency Performance ■ ■ ■ Optimized Series Resistance Tape and Reel for Pick & Place 100% DC Tested

HP STEP RECOVERY DIODES

Abstract: construction of varactor diode varactor diode application "Step Recovery Diode" M92A DVA6735-12 DVA6735-18 DVA6735-24 DVA6736-06 DVA6736-12
Contextual Info: A-Mode Multiplier Diodes, Multichip A-Mode Diodes, A-Mode Chips - ALPHA INI/ S E U I C O N D U C T O R USE J 05A5443 DDQ1374 Gc14 • ALP Features ■ High Efficiency ■ High Power Handling ■ High Reliability Description Alpha A-Mode diodes are oxide passivated, epitaxial

DDB-4503

Abstract: KA band detector
Contextual Info: 0585443 ALPHA ~0Ì IND/ SEMICONDUCTOR 03E 00 37 3 T-07-0 7 D eT | 05A5443 0D0D373 4 Silicon Schottky Barrier Detector Diodes -u r- • f e : '/- .- /- •: > Features • Low 1/f Noise • Bonded Junctions for Reliability • Planar Passivated Beam-Lead and Chip Construction

Contextual Info: GaAs MMIC 2 Watt High Linearity ËBÀlph Cellular SPDT Switch DC-2000 MHz A S 1 16-59 Features • High Linearity 50 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Extremely Low Cost ■ Requires Fixed Positive Bias ■

DMJ3086

Abstract: DMJ4317 DME4750-000 DMF3068-000 mip 290 dmf5818 DMF6554-000 DME3040-000 DMJ3181-000 DMF3291-000
Contextual Info: ALPHA IN»/ S E M I C O N D U C T O R 33E D • Q S 6 S H M B 0 0 0 0 7 5 4 7 ■ ALP Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes : ^ L Features \ ■ Ideal for MIC Low 1/f Noise Low Intermodi Intermodulation Distortion Low Turn On Hermetically Sealed Packages

DKV3803-30

Abstract: DKV6520 adkv LA 6520 DKV6520-06 DKV6520-12 DKV6525-06 DKV6525-12 dkv3803-23 DKV6522-24
Contextual Info: Silicon Hyperabrupt Tuning Diodes DKV6520 Series ALPHA IN] / S E M I C O N D U C T O R 4fiE D 05Ô5443 Q Q D 1 3 n ITI IALP Features • ■ ■ ■ High to Very High Frequency Operation Capacitance Values of 20 pF to 200 pF at 4 Volts Octave Tuning from 4 to 20 Volts

AD004T2-00

Abstract: AD004T2-11 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10 AS116-59
Contextual Info: GaAs MMIC 2 Watt High Linearity Cellular SPDT Switch DC-2000 MHz Ë B Â Îp fi A S 1 16-59 Features • High Linearity 50 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■o J2 ■ Extremely Low Cost ■ Requires Fixed Positive Bias

Contextual Info: EUAIph Surface Mount GaAs MESFET AF100-32 Features • High Gain, 16 dB at 4 GHz, 7.0 dB at 12 GHz ■ Low Noise Figure, 0.55 dB at 4 GHz, 2.2 dB at 12 GHz ■ Ti/Pt/Au Gates ■ Passivated Device ■ Surface Mount Package ■ Available in Tape and Reel Description

180 Degree hybrid ku band

Contextual Info: Universal Chip Mixer and Detector SchotUcy Barrier Diodes EBAIph CDX76XX, CME7660 Features • For Microwave M IC Assembly ■ Mechanically Rugged Design Exceeds MIL 883 Wire Bond Specifications for Hybrid Assembly ■ Optimized Barrier Heights for Mixer and Detector

1N23 diode

Abstract: 1N23 1N53AR 1n3747 1N1132 1N53R 1N415C 1n415 1N26 1N23 ALPHA
Contextual Info: ALPHA IN»/ SEMICONDUCTOR MAE D • 0SAS443 00011b3 447 ■ ALP Silicon Point Contact Mixer Diodes Description Alpha’s point contact mixer diodes are designed for applications through Ka-band 40 GHz . These diodes employ epitaxial silicon optimized for low noise figure