05D2505 Search Results

Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 2500 420 8.5 1.7 0.62 1500 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 05D2505 Doc. No. 5SYA1114-03 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters

GTO ABB

Abstract: 05d2505
Contextual Info: Key Parameters VRRM = 2500 IFAVM = 420 IFRMS = 670 IFSM = 8.5 VF0 = 1.70 rF = 0.62 VDClink = 1500 V A A kA V Fast Recovery Diode 5SDF 05D2505 mΩ V Doc. No. 5SYA 1114-03 July 98 •Patented free-floating silicon technology •Low on-state and switching losses

RCD snubber

Abstract: 05d2505
Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 2500 420 8.5 1.7 0.62 1500 V A kA V Fast Recovery Diode 5SDF 05D2505 mΩ V Doc. No. 5SYA 1114-03 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters

FSV 052

Contextual Info: F A S T R E C O V E R Y _ D - I O D E S - O ptim iert für schnelles und weiches Ausschaltverhalten. - Kleine Speicherladung. - Hohes zulässiges d i/d t beim Aus­ schalten. - Vollständiges Sortiment für den Einsatz mit GTOs.