05FL54 Search Results

DSA6925

Abstract: DSA6925a
Contextual Info: 0 5 8 5 4 4 3 ALPHA 03 IN D / S EMI C ON D UC T OR 03E 0 0 4 3 2 7“ - 0 7 - / 5 - D E p 05fl54 43 0 0 0 0 4 3 2 5 J p High Voltage PIN Switching Diodes Features • • • • • • • Oxide Passivated 500 Volt Breakdown 0.1 to 1.0 pF Capacitance Low Series Resistance to .25 Ohms

diode lt 445

Abstract: 082-001 alpha
Contextual Info: 0 5 8 5 4 4 3 ALPHA 03 D lT |05fl5443 IND/ SEMICONDUCTOR 0000554 fi 03E 0 0 5 5 4 D — |~~ GaAs Parametric Amplifier Varactors Features • High Gain and Low Noise Temperature • Deloach and Houlding Measurements Insure Reproducibility • High Reliability and Space Qualified

D5046A

Abstract: DS046B D5046 D5046C D5146A D5146B D5371A D5371B D5371C D5371D
Contextual Info: ~03 D eT^ 05fl5443 OQOOSSfl 5 0585443 ALPHA INO/ SE MI CO ND UC T OR 03E 00558 D T ~ ó J~ / J Silicon Parametric Amplifier Varactors Features % • High G ain at Low Pum p Power • Low Noise • High Reliability Description 082 Outline T h e Alpha series of silicon parametric amplifier var­

TS7-15

Abstract: DSH4787-010 DSH4787-015 DSH4787-020 DSH4787-030 DSH4787-040 DSN6566-050
Contextual Info: Pressure Contact Schottky Barrier Switching Diodes ALPHA IND/ SEMICONDUCTOR MAE D • 05fl5443 DODllST Tib ■ ALP Features ■ ■ ■ Fast Switching Time High Breakdown Voltage Hermetically Sealed Types M ■ DSN6566 DSH4787 The devices are designed primarily for high speed

DMG-6414A

Abstract: DMF3068 DMF4384 diodos led DMH6570 dmj4317 DMF3243 DMF5847 DMJ4708 dmf5818
Contextual Info: 0585443 ALPHA ALPHA ~Ü3 DSflSMM3'DGGG3Sl S | ~ D J‘ - Q ' 7 —0 1 Silicon Beam-Lead and Chip Schottky Barrier INC/ SEMICONDUCTOR Mixer Diodes \ n i - ' i - =:- V] Features :IT • Ideal for MIC • Low 1/f Noise • Low Intermodulation Distortion • Low Turn On

AFM02N5-55

Abstract: AD004T2-00 AD004T2-11 AFM02N5-56 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10 S443 92260
Contextual Info: Low Noise Packaged GaAs MESFET Alph AFM02N5-55, AFM02N5-56 Drain Features Source • Low Noise Figure, 1.1 dB at 12 GHz ■ High Associated Gain, 8.0 dB at 12 GHz ■ High MAG, > 8.5 dB at 12 GHz ■ 0.25 ,um Ti/Pt/Au Gates ■ Passivated Surface ■ Low Cost Metal Ceramic Package

Contextual Info: GaAs MMIC SPDT Switch EDAlph in SOIC 8 Plastic Package AS101—12 Features • Extremely Low Cost ■ 3 Volt Operation ■ Low Power Consumption Description The A S 1 0 1 -1 2 is an SPDT complementary voltage control. switch with Its low voltage control function is ideal for 3 Volt applications which

BB105

Abstract: MV109 diode bb105 BB105 siemens ct3v CKV2105 Direct Replacement MOTOROLA DKV4100 DKV4105 DKV4109
Contextual Info: Silicon Hyperabrupt Tuning Diodes DKV4100 Series ALPHA I N » / SEMICONDUCTOR 4ÖE D • 0SÔ5M43 00G13Eb 331 I ALP Features Direct Replacement for Motorola, Siemens, and ITT BB105 and MV109 Types Highest Q Possible Reproducible C vs. V Characteristics Available in All Standard Packages

AFM02N5-00

Abstract: 2b25 gm 4511 4511 gm AD004T2-00 AD004T2-11 AE002M2-29 VP 16029 AK006R2-01 AK006R2-10
Contextual Info: Low Noise GaAs MESFET Chip AFM02N5-00 Dim ensions in Microns Thickness = 100 Features Low Noise Figure, 1.0 dB at 12 GHz High Associated Gain, 9.5 dB at 12 GHz High MAG, > 12 dB at 12 G H z 0.25 am Ti/Pt/Au Gates Passivated Surface Description Alpha’s AFM 02N 5-00 low noise G aAs M E S FE T Chip

radar detector 10.5 ghz local oscillator

Abstract: DMC5501 DMF-6106 DMF4039 dmf6106 005801 DMF6130-013 Silicon Point Contact Mixer Diodes
Contextual Info: Silicon Bonded and Pressure Contact Schottky Barrier Mixer Diodes ALPHA IND/ S E M I C O N D U C T O R 0 5 A S M M 3 Q D D l l M b 3bfl • ALP 43E D * Features T í á,í' ■ ■ ■ ■ ■ 07-07 Bonded Junctions for Reliability Low 1/f Noise Low Turn On for Starved L.O. Applications