06MAY04 Search Results

02CZ5

Abstract: DIN 16901 130
Contextual Info: THIS DRAWING IS UNPUBL1SH SHEIL TTTLIC COPYRIGHT 1996 rr> RELEASED FOR PUBLICATION FREI FUER VERQEFFENTLI CHUNG BY AMP INCORPORATED, ALLE REICHTE VORBEHALTEN mm 0 2 ÇZ5 MATED WITH: PA55END ZU: , 19-, E I-* +0 . 6 CM - CD B o o + I X a 10 6 5 ^ - 1 + 0 . 5

material declaration semiconductor package

Abstract: asbestos safety material declaration vishay 89901 DO-219AB 58018
Contextual Info: Vishay Semiconductors The Constituents of Semiconductor Components Responsible electronic component and equipment manufacturers are already preparing for the time when the lifespan of their products comes to an end by scrutinizing the materials incorporated and their

CAT5251

Abstract: CAT5251WI-00 CAT5251WI-50 CAT5251WI-50-T1 CAT5251YI-00 CAT5251YI-50 MS-013
Contextual Info: CAT5251 Quad Digitally Programmable Potentiometer DPP with 256 Taps and SPI Interface FEATURES DESCRIPTION „ Four linear-taper digitally programmable potentiometers „ 254 resistor taps per potentiometer „ End to end resistance 50kΩ or 100kΩ „ Potentiometer control and memory access via

Vishay nobel

Abstract: nobel 420 excitation 10v vishay RELAY IP-65 by 228 PH
Contextual Info: WIN 3 Vishay Nobel Transducers Weight Indicator FEATURES ∑ Housed in a box of rigid stainless steel ∑ Three different levels can be monitored ∑ Pre-set level values can be shown ∑ Computer communication via interfaces RS-232 or RS-485 DESCRIPTION The integrity of the weight value is guaranteed by automatic

1832A

Abstract: Augat 824-AG11D Augat lsg 808-AG10D 1437537-5 0-1437540-3 832-AG38D 814-AG10D 2-1437537-1 820-AR11D-ES 7-1437539-7 1806-AG11
Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. DIST 00 AD BY TYCO ELECTRONIC5 CORPORATION. REVISIONS LTR DESCRIPTION }p o o MATERIALS: INSULATOR: POLYESTER, UL RATED 9 4 V - 0 CONTACT: 8 0 0 & 1 8 00 SERIES CONTACT: 4 BEAM, COPPER ALLOY,

tk 100 A

Contextual Info: TSMS3700 VISHAY Vishay Semiconductors GaAs Infrared Emitting Diode in SMT Package Description TSMS3700 is a standard GaAs infrared emitting diode in a miniature PL-CC-2 package. Its flat window provides a wide aperture, making it ideal for use with external optics.

TSUS4400

Contextual Info: TSUS4400 VISHAY Vishay Semiconductors GaAs Infrared Emitting Diode in ∅ 3 mm T-1 Package Description TSUS4400 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. The device is spectrally matched to silicon photodetectors.

Contextual Info: 7 T H I S DRAWING JÊL C OPYRIGHT 15 U N PU B L IS H E D . 19 R E L E A S E D FOR P U B L I C A T I O N BY AMP INCORPORATED. , 6 4 5 2 3 19 D I ST LOC ALL R IG H T S R ES E R V E D . AD REVISIONS 39 DESCRIPTION R GOLD F L A S H OVER 0 . 0 0 1 2 7 [„000050]

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. IF F COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 6 5 4 3 2 - ALL RIGHTS RESERVED. LOC DIST AD 00 REVISIONS P LTR A1 A2 DESCRIPTION DATE DWN APVD ECO—08 —0261 91 230CT08 MB MM REVISED PER ECO-10- 0 0 0 4 4 4

Contextual Info: 6 THIS DR A WI N G COPYRI GHT IS UNPUBL IS HED. 19 LABEL AS RELEASED BY AMP INCORPORATED. ALL 3 F OR P U B L I C A T I O N RIGHTS LOC DIST REVISIONS RESERVED. LTR CABLE,14 SH I E L O E O SHOWN AWG 0 0 OHM IMPEOANCE DESCRIPTION DA T E DWN A PV D RELEASE

tyco 17105-3608

Abstract: plc 5000 17105-3608 tyco
Contextual Info: 2 THIS £L DRAWIN G IS UNPUBLISHED. C O P Y R I G H T 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR 20 PUBLICATION R 1G H T S LOC RESERVED. GP DIST R E V I S I O N S 00 LTR DESCRIPTION DATE REVISED PER E C OS I 3 - 0 2 5 3 - 0 4 REVISED PER ECO - 06 - 0 0 6 6 2 4

TSMG3700

Abstract: TSMG3700-GS08
Contextual Info: TSMG3700 VISHAY Vishay Semiconductors GaAlAs DH Infrared Emitting Diode in SMT Package Description TSMG3700 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant

Contextual Info: TSTA7300 VISHAY Vishay Semiconductors GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case Description TSTA7300 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a high

Contextual Info: TSSS2600 VISHAY Vishay Semiconductors GaAs IR Emitting Diode in Side View Miniature Package Description TSSS2600 is a miniature infrared emitting diode in GaAs on GaAs technology, molded in a clear, untinted plastic package with cylindrical side view lens.

Contextual Info: 2 THIS C DRAWI NG IS UNPUBLISHED. C O P Y R I G H T 20 BY RELEASED ALL - F OR PUBLICATIO N RIGHTS 20 L OC RESERVED. GP REVISIONS DIST 00 LTR Dl DESCRIPTIO N DATE REVI SED PER ECO-I 1-004835 DWN I IMAR201 I RK APVD HMR c C .m o o o o o o — 5*. MATERIAL:

Contextual Info: TSML3710 VISHAY Vishay Semiconductors GaAs/GaAlAs Infrared Emitting Diode in SMT Package Description TSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PLCC2 SMD package. Features • • • • • SMT IRED with extra high radiant power

Contextual Info: TSTA7100 VISHAY Vishay Semiconductors GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case Description TSTA7100 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a very

40039

Abstract: SOD-523 DO-219AB Germanium DO-35 DIODE 89901 cd 4553 material declaration vishay asbestos DO-219AB germanium diode SOD323
Contextual Info: VISHAY Vishay Semiconductors The Constituents of Semiconductor Components Responsible electronic component and equipment manufacturers are already preparing for the time when the lifespan of their products comes to an end by scrutinizing the materials incorporated and their

CAT5251

Abstract: CAT5251WI-00-T1 CAT5251WI50 CAT5251WI-50-T1 CAT5251YI-00-T2 CAT5251YI-50-T2 MS-013
Contextual Info: CAT5251 Quad Digitally Programmable Potentiometer DPP with 256 Taps and SPI Interface FEATURES DESCRIPTION „ Four linear-taper digitally programmable potentiometers „ 254 resistor taps per potentiometer „ End to end resistance 50 kΩ or 100 kΩ „ Potentiometer control and memory access via

GaAs 1040 nm

Contextual Info: TSML1000/1020/1030/1040 VISHAY Vishay Semiconductors Extented Power IR Emitting Diode in SMD Package TSML1000 Description TSML1000 series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology molded in clear SMD package. This technology represents best performance for radiant power under pulse conditions, forward voltage

Contextual Info: TSMS3700 VISHAY Vishay Semiconductors GaAs Infrared Emitting Diode in SMT Package Description TSMS3700 is a standard GaAs infrared emitting diode in a miniature PL-CC-2 package. Its flat window provides a wide aperture, making it ideal for use with external optics.

Contextual Info: TSTA7500 VISHAY Vishay Semiconductors GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case Description TSTA7500 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its flat glass window makes it

CAT5251

Abstract: CAT5251WI-00-T1 CAT5251WI50 CAT5251WI-50-T1 CAT5251YI-00-T2 CAT5251YI-50-T2 MS-013
Contextual Info: CAT5251 Quad Digitally Programmable Potentiometer DPP with 256 Taps and SPI Interface FEATURES DESCRIPTION „ Four linear-taper digitally programmable potentiometers „ 254 resistor taps per potentiometer „ End to end resistance 50 kΩ or 100 kΩ „ Potentiometer control and memory access via

114-13120

Contextual Info: 2 THIS C DRAWING IS UNPUBLISHED. C O P Y R I G H T 20 BY - RELEASED ALL FOR PUBLICATION RIGHTS 20 LOC RESERVED. DIST GP REVISIONS 00 LTR Gl MATERIAL: 0.25 THICK COPPER V IA S REVISED PER ECO-I I- 0 0 3 3 1 9 0 1APR201 I JY CW REVISED PER E C O - 12-011010