06SEP10 Search Results

Contextual Info: 4 TH IS DRAWING 2 15 UN PU B LIS H E D - COPYRIGHT RELEASED BY TYCO ELECTRONICS CORPORATION. ROR PUBLIC ATION DIST LOC ALL INTERNATIONAL RIGHTS RESERVED. R EVIS IO N S J LTR E3 D E S C R IP T IO N RE VISED E C R — 1 0 —0 1 7 2 8 5 DATE DWN APVD 06SEP10

Contextual Info: 4 TH IS DRAWING 2 15 UN PU B LIS H E D - COPYRIGHT RELEASED BY TYCO ELECTRONICS CORPORATION. ROR PUBLIC ATION LOC ALL INTERNATIONAL RIGHTS RESERVED. REVIS IO N S D IS T J LTR D E S C R IP T IO N REDRAWM W/CHANGE E C R - 1 0 —0 1 7 2 S 5 DATE DWN APVD 06SEP10

174516-7

Contextual Info: 4 2 THIS DRAWING 15 UNPUBLISHEDCOPYRIGHT RELEASED ROR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL INTERNATIONAL RIGHTS RESERVED. DIST R EVIS IO N S J LTR E1 DESCRIPTION REVISED E C R — 1 0 —0 1 7 2 8 5 DATE DWN APVD 06SEP10 TS KB D 42,2 25.4 43.1 ±0.5

IRFD9024

Contextual Info: IRFD9024, SiHFD9024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 60 RDS(on) () • Repetitive Avalanche Rated VGS = - 10 V 0.28 Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • For Automatic Insertion

IRFD9120

Contextual Info: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration

173630

Contextual Info: 4 T H IS D R A W IN G S 2 U N P U B L IS H E D . RELEASED FO R ALL C O P Y R IG H T By P U B L IC A T IO N R IG H TS REVIS IO N S RESERVED. - LTR D2 DATE D E S C R IP T IO N REVISED PER E C O - 1 1- 00 51 40 DWN A PVD RK HMR 28MAR11 D 364+0.5 ,35.2 C E

Contextual Info: BAS16T Surface Mount Switching Diodes SWITCHING DIODES 150 mAMPERES 75 VOLTS P b Lead Pb -Free Features: * Ultra-Small Surface Mount Package * Fast switching Speed * For General Purpose Switching Applications * High Conductance 3 1 Mechanical Data: 2 SOT-523(SC-75)

Contextual Info: 138 AML Vishay BCcomponents Aluminum Capacitors Axial Miniature, Long-Life FEATURES • Polarized aluminum non-solid electrolyte electrolytic capacitors,  Axial leads, cylindrical aluminum case, insulated with a blue sleeve case Ø 6.3 mm x 12.7 mm and 7.7 mm x 12.7 mm are

Contextual Info: Si4200DY Vishay Siliconix Dual N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 8a 0.030 at VGS = 4.5 V 7.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET

Contextual Info: New Product Si7270DP Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.021 at VGS = 10 V 8 0.025 at VGS = 4.5 V 8 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: SQ4431EY Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedc

Contextual Info: IRFD9110, SiHFD9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S HVMDIP Available RoHS* COMPLIANT DESCRIPTION

Contextual Info: IRFD214, SiHFD214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration • Repetitive Avalanche Rated 2.0 RoHS* • End Stackable COMPLIANT

Contextual Info: SQM50N04-4m0L Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd

Contextual Info: New Product Si4752DY Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0055 at VGS = 10 V 25 0.0076 at VGS = 4.5 V 21 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • SkyFETMonolithic TrenchFETPower

Contextual Info: SQ3481EV Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedc

Contextual Info: Si7742DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0035 at VGS = 10 V 60 0.0045 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 34 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21

IRFD024

Contextual Info: IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • For Automatic Insertion 0.10 Available RoHS* Qg (Max.) (nC) 25 • End Stackable Qgs (nC) 5.8 • 175 °C Operating Temperature

sqd19p06

Abstract: diode 1919
Contextual Info: SQD19P06-60L Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 60 RDS(on) (Ω) at VGS = - 10 V 0.055 RDS(on) (Ω) at VGS = - 4.5 V 0.100 ID (A) • TrenchFET Power MOSFET

Contextual Info: IRFD310, SiHFD310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V 400 RDS(on) () • Repetitive Avalanche Rated VGS = 10 V 3.6 Qg (Max.) (nC) 17 Qgs (nC) 3.4 Qgd (nC) 8.5 Configuration • For Automatic Insertion

SI5457DC

Abstract: si5457 marking code bt
Contextual Info: New Product Si5457DC Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.036 at VGS = - 4.5 V - 6a 0.041 at VGS = - 3.6 V - 6a 0.056 at VGS = - 2.5 V - 6a Qg (Typ.) 12.5 nC 1206-8 ChipFET APPLICATIONS • Portable Devices

Contextual Info: SQM50P06-15L Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 60 RDS(on) (Ω) at VGS = - 10 V 0.015 RDS(on) (Ω) at VGS = - 4.5 V 0.022 ID (A) • TrenchFET Power MOSFET

66800

Contextual Info: SQM50N04-4m0L Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd

Contextual Info: IRFD9024, SiHFD9024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 60 RDS(on) () • Repetitive Avalanche Rated VGS = - 10 V 0.28 Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • For Automatic Insertion