SI5457DC Search Results

SI5457DC

Abstract: si5457 marking code bt
Contextual Info: New Product Si5457DC Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.036 at VGS = - 4.5 V - 6a 0.041 at VGS = - 3.6 V - 6a 0.056 at VGS = - 2.5 V - 6a Qg (Typ.) 12.5 nC 1206-8 ChipFET APPLICATIONS • Portable Devices

636127

Contextual Info: Si5457DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: SPICE Device Model Si5457DC Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: New Product Si5457DC Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.036 at VGS = - 4.5 V - 6a 0.041 at VGS = - 3.6 V - 6a 0.056 at VGS = - 2.5 V - 6a Qg (Typ.) 12.5 nC 1206-8 ChipFET APPLICATIONS • Portable Devices

Contextual Info: SPICE Device Model Si5457DC www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: New Product Si5457DC Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.036 at VGS = - 4.5 V - 6a 0.041 at VGS = - 3.6 V - 6a 0.056 at VGS = - 2.5 V - 6a Qg (Typ.) 12.5 nC 1206-8 ChipFET APPLICATIONS • Portable Devices

Contextual Info: New Product Si5457DC Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.036 at VGS = - 4.5 V - 6a 0.041 at VGS = - 3.6 V - 6a 0.056 at VGS = - 2.5 V - 6a Qg (Typ.) 12.5 nC 1206-8 ChipFET APPLICATIONS • Portable Devices

Si5457DC

Abstract: marking code bt VISHAY TSOP-6 MARKING CODE 6A SI5457
Contextual Info: New Product Si5457DC Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.036 at VGS = - 4.5 V - 6a 0.041 at VGS = - 3.6 V - 6a 0.056 at VGS = - 2.5 V - 6a Qg (Typ.) 12.5 nC 1206-8 ChipFET APPLICATIONS • Portable Devices

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®