Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    076E03S Search Results

    076E03S Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SOT-263

    Abstract: MS-013AC 100H01
    Contextual Info: Industry Name 075E04 075E05 076E03S 100H01 100H03 D2PAK D2PAK, 4-lead D2PAK, 6-lead DO-214AC DO34 DPAK I-PAK MO-150AH MS-012AA MS-013AC MS-013AD SC-43 SC-59 SC-62 SC-70 SC-73 SC-74 SC-75 SC-76 SC-79 SC-88 SC-88A SC-89 SMA SO-20 SO-24 SO-8 SSOP28 TO-126 TO-202


    Original     		075E04 075E05 076E03S 100H01 100H03 DO-214AC MO-150AH MS-012AA MS-013AC MS-013AD SOT-263 PDF

    KMZ50

    Abstract: MS-012AA BP317 SC17 Wheatstone Bridge amplifier
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 KMZ50 Magnetic field sensor Preliminary specification Supersedes data of 1996 Nov 15 File under Discrete Semiconductors, SC17 1998 Mar 24 Philips Semiconductors Preliminary specification Magnetic field sensor KMZ50


    Original     		M3D315 KMZ50 SCA57 115106/00/02/pp8 KMZ50 MS-012AA BP317 SC17 Wheatstone Bridge amplifier PDF

    TDA3606

    Abstract: TDA3606T
    Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA3606 Multiple voltage regulator with battery detection Product specification Supersedes data of 1995 Dec 19 File under Integrated Circuits, IC01 1997 Jul 15 Philips Semiconductors Product specification Multiple voltage regulator with battery


    Original     		TDA3606 TDA3606 swi31 SCA55 547027/1200/02/pp16 TDA3606T PDF

    BP317

    Abstract: MS-012AA PHP1035
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PHP1035 P-channel enhancement mode MOS transistor Preliminary specification File under Discrete Semiconductors, SC13b 1998 Feb 18 Philips Semiconductors Preliminary specification P-channel enhancement mode MOS transistor


    Original     		PHP1035 SC13b OT96-1 SCA57 135108/00/01/pp8 BP317 MS-012AA PHP1035 PDF

    tea1104 charger ref design

    Abstract: charger IC NiMh 4 ch AN95085 AN95085 APPLICATION NOTES nimh charger lm317 nimh lm317 BC548 and its h parameter values
    Contextual Info: INTEGRATED CIRCUITS DATA SHEET TEA1104; TEA1104T Cost effective battery monitor and fast charge IC for NiCd and NiMH chargers Objective specification File under Integrated Circuits, IC03 1996 Feb 26 Philips Semiconductors Objective specification Cost effective battery monitor and fast


    Original     		TEA1104; TEA1104T SCDS47 417021/1100/02/pp16 tea1104 charger ref design charger IC NiMh 4 ch AN95085 AN95085 APPLICATION NOTES nimh charger lm317 nimh lm317 BC548 and its h parameter values PDF

    GP 821

    Abstract: BLT61 MS-012AA
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 BLT61 UHF power transistor Preliminary specification Supersedes data of 1996 Feb 05 1998 Jan 28 Philips Semiconductors Preliminary specification UHF power transistor BLT61 PINNING FEATURES • High efficiency PIN • High gain


    Original     		M3D315 BLT61 OT96-1 MBK187 SCA57 125108/00/02/pp8 GP 821 BLT61 MS-012AA PDF

    transistor bd139

    Abstract: philips power transistor bd139 BD139 smd transistor zi
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 BLT71/8 UHF power transistor Product specification Supersedes data of 1996 Feb 06 1997 Oct 14 Philips Semiconductors Product specification UHF power transistor BLT71/8 PINNING - SOT96-1 FEATURES • High efficiency


    Original     		M3D315 BLT71/8 OT96-1 SCA55 127067/00/02/pp12 transistor bd139 philips power transistor bd139 BD139 smd transistor zi PDF

    PHN1015

    Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor Logic level FEATURES PHN1015 SYMBOL • ’Trench’ technology • Low on-state resistance • Fast switching • Low-profile surface mount package • Logic level compatible QUICK REFERENCE DATA


    Original     		PHN1015 OT96-1 PHN1015 PDF

    PHC20512

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PHC20512 Complementary enhancement mode MOS transistors Product specification Supersedes data of 1997 Jun 19 File under Discrete Semiconductors, SC13b 1997 Oct 22 Philips Semiconductors Product specification Complementary enhancement mode


    Original     		PHC20512 SC13b OT96-1 SCA55 137107/00/03/pp20 PHC20512 PDF

    03ac29

    Abstract: HZG336 MS-012AA PHN103T
    Contextual Info: PHN103T N-channel enhancement mode field-effect transistor Rev. 01 — 28 August 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHN103T in SOT96-1 SO8 .


    Original     		PHN103T PHN103T OT96-1 OT96-1, 03ac29 HZG336 MS-012AA PDF

    SI4884

    Abstract: MS-012AA
    Contextual Info: SI4884 TrenchMOS logic level FET Rev. 02 — 12 April 2002 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: SI4884 in SOT96-1 SO8 .


    Original     		SI4884 M3D315 SI4884 OT96-1 OT96-1, MS-012AA PDF

    1625AM

    Contextual Info: Philips Semiconductors Product specification Transimpedance amplifier 140MHz SA5212A DESCRIPTION PIN CONFIGURATION The SA 5212A is a 14ki2 transim pedance, wideband, low noise differential output amplifier, particularly suitable for signal recovery in fiber optic receivers and in any other applications w here very low


    OCR Scan     		140MHz) SA5212A 14ki2 140MHz 1625AM PDF

    PHP225

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PHP225 Dual P-channel enhancement mode MOS transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC13b 1997 Jun 20 Philips Semiconductors Product specification Dual P-channel enhancement


    Original     		PHP225 SC13b OT96-1 076E03S MS-012AA PHP225 PDF

    PHP225

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PHP225 Dual P-channel enhancement mode MOS transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC13b 1997 Jun 20 Philips Semiconductors Product specification Dual P-channel enhancement


    Original     		PHP225 SC13b OT96-1 SCA54 137107/00/02/pp12 PHP225 PDF

    BP317

    Abstract: MS-012AA PHP222 SC13
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 PHP222 Dual P-channel enhancement mode MOS transistor Preliminary specification Supersedes data of 1998 Mar 24 File under Discrete Semiconductors, SC13 1998 Apr 01 Philips Semiconductors Preliminary specification Dual P-channel enhancement


    Original     		M3D315 PHP222 OT96-1 SCA59 135108/00/03/pp8 BP317 MS-012AA PHP222 SC13 PDF

    BP317

    Abstract: MS-012AA PHP1025
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PHP1025 P-channel enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1998 Feb 18 Philips Semiconductors Objective specification P-channel enhancement mode MOS transistor PHP1025


    Original     		PHP1025 SC13b OT96-1 SCA57 135108/00/01/pp8 BP317 MS-012AA PHP1025 PDF

    tja1050 c

    Abstract: SJA1000 TX0 Dominant smd transistor fq TJA1050T model MGS375 PCA82C250 TJA1050 TJA1050T TJA1050U
    Contextual Info: INTEGRATED CIRCUITS DATA SHEET TJA1050 High speed CAN transceiver Preliminary specification File under Integrated Circuits, IC18 1999 Sep 27 Philips Semiconductors Preliminary specification High speed CAN transceiver TJA1050 FEATURES GENERAL DESCRIPTION • Fully compatible with the “ISO 11898” standard


    Original     		TJA1050 TJA1050 285002/01/pp16 tja1050 c SJA1000 TX0 Dominant smd transistor fq TJA1050T model MGS375 PCA82C250 TJA1050T TJA1050U PDF

    SAB6456

    Abstract: prescaler 256 IC02 98 Functional 1 prescaler 64 MS-012AA SAB6456T divide-by-256
    Contextual Info: INTEGRATED CIRCUITS DATA SHEET SAB6456 SAB6456T Sensitive 1 GHz divide-by-64/divide-by-256 switchable prescaler Product specification File under Integrated Circuits, IC02 June 1986 Philips Semiconductors Product specification Sensitive 1 GHz divide-by-64/divide-by-256


    Original     		SAB6456 SAB6456T divide-by-64/divide-by-256 SAB6456/SAB6456T divide-by-64 divide-by-256 SAB6456 prescaler 256 IC02 98 Functional 1 prescaler 64 MS-012AA SAB6456T PDF

    philips capacitor 1000uf 25V

    Abstract: TDA3674AT 1.50 MKT MDA961 TDA3672 TDA3674 TDA3674T TDA3676
    Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA3674 Low dropout voltage/quiescent current 5 V voltage regulator with enable Preliminary specification File under Integrated Circuits, IC01 1999 Sep 29 Philips Semiconductors Preliminary specification Low dropout voltage/quiescent current 5 V


    Original     		TDA3674 545002/01/pp16 philips capacitor 1000uf 25V TDA3674AT 1.50 MKT MDA961 TDA3672 TDA3674 TDA3674T TDA3676 PDF

    865 RF transistor

    Abstract: RF Transistor reference "RF Power Modules" microwave transistor 03 Power Transistor MS-012AA SOT391A EU2A sot147a 1117 sot223
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Package outlines RF & Microwave Power Transistors and RF Power Modules 1998 Feb 17 File under Discrete Semiconductors, SC19a Philips Semiconductors RF & Microwave Power Transistors and RF Power Modules Package outlines SO8: plastic small outline package; 8 leads; body width 3.9 mm


    Original     		SC19a OT96-1 OT502A 865 RF transistor RF Transistor reference "RF Power Modules" microwave transistor 03 Power Transistor MS-012AA SOT391A EU2A sot147a 1117 sot223 PDF

    8002 AUDIO amplifier

    Abstract: 8002 audio amplifier 8 pin NE5532 SE663 JIS B 0041 SL003 NE5532N NE5532D8 professional audio power amplifier schematics NE5532AN
    Contextual Info: Product specification Internally-compensated dual low noise operational amplifier DESCRIPTION Q PIN CONFIGURATIONS The 5532 is a dual high-performance low noise operational amplifier. Compared to most of the standard operational amplifiers, such as the 1458, it shows better noise performance, improved output drive


    OCR Scan     		NE/SE5532/5532A OT38-4 E/SE5532/5532A 53-0580A 7110fl2Ej 8002 AUDIO amplifier 8002 audio amplifier 8 pin NE5532 SE663 JIS B 0041 SL003 NE5532N NE5532D8 professional audio power amplifier schematics NE5532AN PDF

    hx 36

    Abstract: MLC716 MSA925 Thin-film magnetic resistance "Magnetic Field Sensor" magnetic sensor circuit diagram mgdb04 KMZ11B1 MS-012AA
    Contextual Info: Philips Semiconductors Preliminary specification Magnetic field sensor KMZ11B1 DESCRIPTION The K M Z 1 1B1 is a sensitive m agnetic field sensor, em ploying the m agnetoresistive effe ct of thin-film perm alloy. Its properties enable this se n so r to be used in a


    OCR Scan     		KMZ11B1 KMZ11B1 OT96-1 076E03S MS-012 hx 36 MLC716 MSA925 Thin-film magnetic resistance "Magnetic Field Sensor" magnetic sensor circuit diagram mgdb04 MS-012AA PDF

    MS-012AA

    Abstract: TDA3606 TDA3606T
    Contextual Info: Philips Semiconductors Preliminary specification Multiple voltage regulator with battery detection TDA3606 FEATURES GENERAL DESCRIPTION • One Vp-state controlled regulator The TDA3606 is a low power voltage regulator. It contains: • Regulator and reset outputs operate during load dump


    OCR Scan     		TDA3606 7110aEt, MS-012AA TDA3606 TDA3606T PDF

    PowerMOS Transistors

    Abstract: 075E05 MS-012AA SO24 SSOP16 SSOP24
    Contextual Info: Philips Semiconductors PowerMOS transistors Package outlines PACKAGE OUTLINES Package SOT23 SOT54 TO-92 SOT54variant (TO-92variant) SOT78 (TO-220AB) SOT89 SOT96-1 (SO8) SOT137-1 (SO24) SOT186 (TO-220 exposed tabs) SOT186A (TO-220) SOT223 SOT226 (low-profile TO-220)


    Original     		OT54variant O-92variant) O-220AB) OT96-1 OT137-1 OT186 O-220 OT186A O-220) OT223 PowerMOS Transistors 075E05 MS-012AA SO24 SSOP16 SSOP24 PDF