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    076N06NS Search Results

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    076N06NS Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG BSC076N06NS3GATMA1

    MOSFET N-CH 60V 50A TDSON-8
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    DigiKey () BSC076N06NS3GATMA1 Digi-Reel 36,837 1
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    BSC076N06NS3GATMA1 Cut Tape 36,837 1
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    BSC076N06NS3GATMA1 Reel 30,000 5,000
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    Avnet Americas BSC076N06NS3GATMA1 Reel 30,000 8 Weeks 5,000
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    Mouser Electronics BSC076N06NS3GATMA1 7,224
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    Newark () BSC076N06NS3GATMA1 Cut Tape 48,461 1
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    BSC076N06NS3GATMA1 Reel 5,000
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    Bristol Electronics BSC076N06NS3GATMA1 317
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    Rutronik BSC076N06NS3GATMA1 Reel 25,000 5,000
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    Chip One Stop BSC076N06NS3GATMA1 Cut Tape 4,689 0 Weeks, 1 Days 1
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    EBV Elektronik BSC076N06NS3GATMA1 320,000 9 Weeks 5,000
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    New Advantage Corporation BSC076N06NS3GATMA1 255,000 1
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    Vyrian BSC076N06NS3GATMA1 57,740
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    Win Source Electronics BSC076N06NS3GATMA1 25,000
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    Infineon Technologies AG BSZ076N06NS3GATMA1

    MOSFET N-CH 60V 20A 8TSDSON
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    DigiKey () BSZ076N06NS3GATMA1 Reel
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    Vyrian BSZ076N06NS3GATMA1 800
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    Infineon Technologies AG BSC076N06NS3 G

    MOSFETs N-Ch 60V 50A TDSON-8 OptiMOS 3
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    Mouser Electronics BSC076N06NS3 G 3,637
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    Ameya Holding Limited BSC076N06NS3 G 4,610
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    Infineon Technologies AG BSC076N06NS3GATMA1.

    Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:50A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:69W; No. Of Pins:8Pins Rohs Compliant: Yes |Infineon BSC076N06NS3GATMA1.
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    Newark BSC076N06NS3GATMA1. Reel 5,000
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    Bristol Electronics BSC076N06NS3GXT 80 1
    • 1 $11.20
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    Vyrian BSC076N06NS3GXT 29,710
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    076N06NS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Type 076N06NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters VDS 60 V RDS on ,max 7.6 mW ID 50 A • Excellent gate charge x R DS(on) product (FOM)


    Original
    BSC076N06NS3 IEC61249-2-21 076N06NS PDF

    076N06NS

    Abstract: JESD22
    Contextual Info: Type 076N06NS3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max 7.6 mΩ ID 20 A • Excellent gate charge x R DS(on) product (FOM)


    Original
    BSZ076N06NS3 076N06NS 076N06NS JESD22 PDF

    Contextual Info: Type 076N06NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max 7.6 mΩ ID 50 A • Excellent gate charge x R DS(on) product (FOM)


    Original
    BSC076N06NS3 076N06NS PDF

    BSC076N06NS3

    Abstract: JESD22 076N06NS
    Contextual Info: Type 076N06NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max 7.6 mΩ ID 50 A • Excellent gate charge x R DS(on) product (FOM)


    Original
    BSC076N06NS3 076N06NS JESD22 076N06NS PDF

    076N06NS

    Abstract: BSC076N06NS3 IEC61249-2-21 JESD22 MARKING d50 BSC076N06NS3 G DS145
    Contextual Info: Type 076N06NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max 7.6 mΩ ID 50 A • Excellent gate charge x R DS(on) product (FOM)


    Original
    BSC076N06NS3 IEC61249-2-21 076N06NS 25angerous 076N06NS IEC61249-2-21 JESD22 MARKING d50 BSC076N06NS3 G DS145 PDF