0805W Search Results

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS031N Rev. 0, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT09MS031NR1 AFT09MS031GNR1 Designed for mobile two-way radio applications with frequencies from

Funkamateur

Abstract: 82C251 PLCC-44 RTC-8563
Contextual Info: phyCORE-591 Hardware-Manual Ausgabe März 2000 Ein Produkt eines Unternehmens der PHYTEC Technologie Holding AG phyCORE-591 Im Buch verwendete Bezeichnungen für Erzeugnisse, die zugleich ein eingetragenes Warenzeichen darstellen, wurden nicht besonders gekennzeichnet. Das

LM780L05ACM-ND

Abstract: PTFB193408SVV1R250XTMA1
Contextual Info: PTFB193408SV Thermally-Enhanced High Power RF LDMOS FET 340 W, 30 V, 1930 – 1990 MHz Description The PTFB193408SV is a 340-watt symetrical push-pull LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990 MHz frequency band. Features include input

fet 4712

Abstract: NFM18PS105R0J30 ptfb193404f LM780L05ACM-ND R804 4712 tl2032 mp 1046 TL1013 0805W220JT
Contextual Info: PTFB193404F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 – 1990 MHz Description The PTFB193404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990

AFT09MS031NR1

Abstract: Z11-Z16 GRM21BR72A103KA01B ATC100A220JT150XT transistor Z6 Coilcraft Design Tools
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS031N Rev. 0, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of

tl117

Abstract: 0805w fet 4712 PTFB193404F
Contextual Info: PTFB193404F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 – 1990 MHz Description The PTFB193404F is a 340-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 1930 to 1990 MHz

PTFB193404F

Contextual Info: PTFB193404F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 – 1990 MHz Description The PTFB193404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990

TS-132-G-A

Abstract: C0805C104K5R ED-1514-ND ED1515 t1-1t ADS2806 ADS2807 ADS280XY SN74ALB16244DGGR SN74ALVCH16244
Contextual Info: ADS280x-EVM SBAU075A – FEBRUARY 2002 – REVISED AUGUST 2003 FEATURES DESCRIPTION z PROVIDE FAST AND EASY PERFORMANCE TESTING FOR THE ADS2806 AND ADS2807 The ADS280x-EVM is designed for ease of use when evaluating the ADS2806 or the ADS2807 high-speed, dual

1008wl

Abstract: atc 1008wl 0603WL 0805WL SMD INDUCTOR marking code 1206WL 1008 wl MARKING WL smd code marking NY atc1008wl
Contextual Info: AMERICAN TECHNICAL CERAMICS INDUCTOR PRODUCTS Manufactured for ATC C O R P O R AT E P R O F I L E Corporate Profile American Technical Ceramics Corp. ATC provides component and custom integrated packaging solutions for the RF, microwave and telecommunications industries. For over forty years we have been “The Engineer’s Choice”.

89C51RD2

Abstract: 8563 u924 RTC-8563 89C51Rx2 PLCC-44 Funkamateur 89C51RC2 89C51RD2 EEPROM
Contextual Info: phyCORE-89C51Rx2 Hardware-Manual Ausgabe Januar 2000 Ein Produkt eines Unternehmens der PHYTEC Technologie Holding AG phyCORE-89C51Rx2 Im Buch verwendete Bezeichnungen für Erzeugnisse, die zugleich ein eingetragenes Warenzeichen darstellen, wurden nicht besonders gekennzeichnet. Das

0603WL

Abstract: LBH1608 LQW18AN4N3C00 l14W 0603WL680 Inductor 0603 0402 0805 LLQ2012-E22NJ 0805wl LLQ1608-AR18J L-14W2N0SV4E
Contextual Info: Wirewound Inductor Part Number Cross Reference This guide provides the necessary information to derive an equivalent Johanson Technology part number from another vendor’s part number. Johanson Technology Inc. supplies the information contained herein based on the vendor data available

royal ohm chip resistor 0805

Abstract: SMD resistor royal ohm royal ohm chip resistor 0603 royal ohm chip resistor 1206 resistor E24 SMD resistors codes smd RESISTORS 0603 1M OHM Royal OHM smd resistors mechanical dimension royal ohm chip resistor
Contextual Info: Surface Mount Resistor Kits • • • • • • • • Ring binder surface mount resistor kits 0603, 0805 and 1206 case sizes 5% and 1% tolerance options Available in E6, E12 and E24 series values Kits contain 100 pieces of each ohmic value from 10R to 1M plus 0R

Contextual Info: ADS280x-EVM SBAU075A – FEBRUARY 2002 – REVISED AUGUST 2003 FEATURES DESCRIPTION z PROVIDE FAST AND EASY PERFORMANCE TESTING FOR THE ADS2806 AND ADS2807 The ADS280x-EVM is designed for ease of use when evaluating the ADS2806 or the ADS2807 high-speed, dual

MC0.063W06031

Abstract: resistor HI-POT+b-5+0805
Contextual Info: 0805 Thick Film Chip Resistor Ratings: Type 0805 Power Rating 0.10W 1/10W Max. Working Voltage 150V Max. Overload Voltage 300V Temperature Range -55°C to +155°C Ambient Temperature 70°C Resistance Range 1Ω to 10MΩ Power Rating: Resistors shall have a power rating based on continuous load operation at an ambient temperature of 70°C. For temperature

0805R1C-KPB

Abstract: 0805G6C-KPC 0805B2C-KPC 0805g blue led KPB datasheet 0805G3C-KHC 0805G6C SMD LED 0805 white
Contextual Info: LED Series Products Elecsound 0805 Package Chip LED Datasheet Chip Part Number Material Emitted Color VF V If=20mA Wave Len IV(mcd)If=20mA Angle Lens Type gth Min Min Min Typ 2θ1/2 λD(nm) 0805R1C-KPB AlGalnP Red 620-635 Water Clear 1.9 2.3 40 80 120 0805R1C-KPC

multicomp 0603 rmc

Abstract: RMC0805 multicomp chip resistor IEC E6 E12 E24 SERIES RESISTORS resistor E24 1206W8J SURFACE MOUNT RESISTOR RMC 0805 0805WAJE240KIT multicomp chip resistor 0603
Contextual Info: Surface Mount Resistor Kits Features: • • • • • • • Ring binder surface mount resistor kits. 0603, 0805 and 1206 case sizes. 5% and 1% tolerance options. Available in E6, E12 and E24 series values. Kits contain 100 pieces of each ohmic value from 10R to 1M plus 0R.

PTFB193404F

Contextual Info: PTFB193404F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 – 1990 MHz Description The PTFB193404F is a 340-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 1930 to 1990 MHz