080P3NS Search Results

080P3NS Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
D148 Abstract: JESD22-A114 080P3NSE Contextual Info: BSO080P03NS3E G OptiMOS 3 P3-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 • Qualified according JEDEC 1 for target applications • 150°C operating temperature R DS on),max -30 V V GS=10 V 8.0 mΩ V GS=6 V 11.4 ID 14.8 A	Original	BSO080P03NS3E 080P3NSE D148 JESD22-A114 080P3NSE	PDF
IEC61249-2-21 Abstract: JESD22-A114 Contextual Info: BSO080P03NS3E G OptiMOS 3 P3-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 • Qualified according JEDEC 1 for target applications • 150°C operating temperature R DS on),max -30 V V GS=10 V 8.0 mΩ V GS=6 V 11.4 ID 14.8	Original	BSO080P03NS3E IEC61249-2-21 080P3NSE IEC61249-2-21 JESD22-A114	PDF
IEC61249-2-21 Abstract: JESD22-A114 Contextual Info: BSO080P03NS3 G OptiMOS 3 P3-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 • Qualified according JEDEC 1 for target applications • 150°C operating temperature R DS on),max -30 V V GS=10 V 8.0 mΩ V GS=6 V 11.4 ID 14.8 A	Original	BSO080P03NS3 IEC61249-2-21 080P3NS IEC61249-2-21 JESD22-A114	PDF
JESD22-A114 Contextual Info: BSO080P03NS3 G OptiMOS 3 P3-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 • Qualified according JEDEC 1 for target applications • 150°C operating temperature R DS on),max -30 V V GS=10 V 8.0 mΩ V GS=6 V 11.4 ID 14.8 A	Original	BSO080P03NS3 080P3NS JESD22-A114	PDF
080P3NS Abstract: GS-10 Contextual Info: BSO080P03NS3 G OptiMOS 3 P3-Power-Transistor Product Summary Features VDS • single P-Channel in SO8 • Qualified according JEDEC1 for target applications • 150°C operating temperature RDS on),max -30 V VGS=-10 V 8.0 mW VGS=-6 V 11.4 ID -14.8 A • V GS=25 V, specially suited for notebook applications	Original	BSO080P03NS3 IEC61249-2-21 080P3NS 080P3NS GS-10	PDF
JESD22-A114 Contextual Info: BSO080P03NS3E G OptiMOS 3 P3-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 • Qualified according JEDEC 1 for target applications • 150°C operating temperature R DS on),max -30 V V GS=10 V 8.0 mΩ V GS=6 V 11.4 ID 14.8 A	Original	BSO080P03NS3E 080P3NSE JESD22-A114	PDF
JESD22-A114 Abstract: d148 Contextual Info: BSO080P03NS3 G OptiMOS 3 P3-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 • Qualified according JEDEC 1 for target applications • 150°C operating temperature R DS on),max -30 V V GS=10 V 8.0 mΩ V GS=6 V 11.4 ID 14.8 A	Original	BSO080P03NS3 080P3NS JESD22-A114 d148	PDF
Contextual Info: BSO080P03NS3 G OptiMOS 3 P3-Power-Transistor Product Summary Features VDS • single P-Channel in SO8 • Qualified according JEDEC1 for target applications • 150°C operating temperature RDS on),max -30 V VGS=-10 V 8.0 m9 VGS=-6 V 11.4 ID -14.8 A • V GS=25 V, specially suited for notebook applications	Original	BSO080P03NS3 IEC61249-2-21 080P3NS	PDF