084P3NS
Abstract: BSC084P03NS3 G
Contextual Info: BSC084P03NS3 G OptiMOSTM P3 Power-Transistor Product Summary Features • single P-Channel in SuperSO8 • Qualified according JEDEC 1 for target applications V DS -30 V R DS on),max 8.4 mΩ ID -78.6 A • 150 °C operating temperature • 100% Avalanche tested
|
Original
|
BSC084P03NS3
084P3NS
084P3NS
BSC084P03NS3 G
|
PDF
|
IEC61249-2-21
Abstract: JESD22 JESD22-A114
Contextual Info: BSC084P03NS3E G OptiMOSTM P3 Power-Transistor Product Summary Features • single P-Channel in SuperSO8 • Qualified according JEDEC 1 for target applications V DS -30 V R DS on),max 8.4 mΩ ID -78.6 • 150 °C operating temperature A PG-TDSON-8 • 100% Avalanche tested
|
Original
|
BSC084P03NS3E
IEC61249-2-21
084P3NSE
IEC61249-2-21
JESD22
JESD22-A114
|
PDF
|
AIR32
Abstract: 084P3NS
Contextual Info: BSC084P03NS3E G OptiMOSTM P3 Power-Transistor Product Summary Features • single P-Channel in SuperSO8 • Qualified according JEDEC 1 for target applications V DS -30 V R DS on),max 8.4 mΩ ID -78.6 A • 150 °C operating temperature • 100% Avalanche tested
|
Original
|
BSC084P03NS3E
084P3NSE
AIR32
084P3NS
|
PDF
|
084P3NS
Abstract: GSV101 IEC61249-2-21 JESD22 JESD22-A114
Contextual Info: BSC084P03NS3 G OptiMOSTM P3 Power-Transistor Product Summary Features V DS -30 V • single P-Channel in SuperSO8 R DS on ,max 8.4 mΩ • Qualified according JEDEC 1) for target applications ID -78.6 • 150 °C operating temperature A PG-TDSON-8 • 100% Avalanche tested
|
Original
|
BSC084P03NS3
IEC61249-2-21
084P3NS
084P3NS
GSV101
IEC61249-2-21
JESD22
JESD22-A114
|
PDF
|