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    IEC61249-2-21

    Abstract: JESD22 JESD22-A114
    Contextual Info: BSC084P03NS3E G OptiMOSTM P3 Power-Transistor Product Summary Features • single P-Channel in SuperSO8 • Qualified according JEDEC 1 for target applications V DS -30 V R DS on),max 8.4 mΩ ID -78.6 • 150 °C operating temperature A PG-TDSON-8 • 100% Avalanche tested


    Original     		BSC084P03NS3E IEC61249-2-21 084P3NSE IEC61249-2-21 JESD22 JESD22-A114 PDF

    AIR32

    Abstract: 084P3NS
    Contextual Info: BSC084P03NS3E G OptiMOSTM P3 Power-Transistor Product Summary Features • single P-Channel in SuperSO8 • Qualified according JEDEC 1 for target applications V DS -30 V R DS on),max 8.4 mΩ ID -78.6 A • 150 °C operating temperature • 100% Avalanche tested


    Original     		BSC084P03NS3E 084P3NSE AIR32 084P3NS PDF