08H6005 Search Results

Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 5500 585 18 4.5 1.3 3300 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 08H6005 PRELIMINARY Doc. No. 5SYA1116-01 Sep. 01 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating

Contextual Info: Key Parameters VRRM = 5500 IFAVM = 640 IFRMS = 1000 IFSM = 18 VF0 = 2.65 rF = 2.1 VDClink = 3300 Fast Recovery Diode for GCT applications V A A kA V mΩ V 5SDF 08H6005 PRELIMINARY Doc. No. 5SYA 1116-01 July 98 Features • Patented free-floating silicon technology

Contextual Info: Key Parameters VRRM = 5500 IFAVM = 640 IFRMS = 1000 IFSM = 18 VF0 = 2.65 rF = 2.1 VDClink = 3300 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 08H6005 PRELIMINARY Doc. No. 5SYA 1116-01 Jan. 99 Features • Patented free-floating technology

igct abb

Abstract: IGCT in switching operation
Contextual Info: VRRM IFAVM IFRMS IFSM VF0 rF VDClink = = = = = = = 5500 640 1000 18 2.65 2.1 3300 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 08H6005 PRELIMINARY Doc. No. 5SYA 1116-01 Jan. 99 • • • • • Patented free-floating technology Industry standard housing

abb gto characteristic

Contextual Info: VRRM IF AV M IFSM V(T0) rT VDClink = = = = = = 5500 585 18x103 4.5 1.3 3300 V A A V mΩ V Fast Recovery Diode 5SDF 08H6005 PRELIMINARY Doc. No. 5SYA1116-01 Oct. 06 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating

IGCT thyristor ABB

Abstract: IGCT
Contextual Info: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 5500 1800 18x103 1.9 0.9 3300 V A A V m V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 19L6020 Doc. No. 5SYA1250-00 Feb. 12 • High snubberless turn-off rating  Optimized for medium frequency

Pressure transmitter TBD

Abstract: HFBR1528Z A125 B125 HFBR-1528Z HFBR-2521Z MTA-156 IGCT thyristor current max igct abb IGCT 7000
Contextual Info: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 5500 3600 26x103 1.93 0.536 3300 V A A V m V Asymmetric Integrated GateCommutated Thyristor 5SHY 50L5500 PRELIMINARY Doc. No. 5SYA1244-03 Aug. 11 • High snubberless turn-off rating  Optimized for medium frequency (<1 kHz)

high power igct abb

Abstract: igct 6500 42L6500
Contextual Info: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 6500 4200 26x103 1.75 0.59 4000 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 42L6500 Doc. No. 5SYA1245-02 May 08 • High snubberless turn-off rating • High electromagnetic immunity • Simple control interface with status feedback

high power igct abb

Abstract: IGCT thyristor current max amp mta 156
Contextual Info: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 6500 3800 26x103 1.88 0.56 4000 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 42L6500 Doc. No. 5SYA1245-03 June 10 • High snubberless turn-off rating • High electromagnetic immunity • Simple control interface with status feedback

IGCT thyristor ABB

Abstract: gct thyristor A125 B125 HFBR-1528 HFBR-2528 MTA-156 IGCT thyristor current max igct abb 5SHX19L6010
Contextual Info: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 5500 1800 18x103 1.9 0.9 3300 V A A V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 19L6010 Doc. No. 5SYA1229-02 Aug 07 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and

FSV 052

Contextual Info: F A S T R E C O V E R Y _ D - I O D E S - O ptim iert für schnelles und weiches Ausschaltverhalten. - Kleine Speicherladung. - Hohes zulässiges d i/d t beim Aus­ schalten. - Vollständiges Sortiment für den Einsatz mit GTOs.