08MAR05 Search Results

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 20- 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 20’ LOC - ALL RIGHTS RESERVED. REVISIONS DIST 00 GP LTR DESCRIPTION REDRAWN PER EC 0S13-0148-04 DATE DWN APVD 08MAR05 TS JG D D A u M A T E R IA L :

Contextual Info: THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION LOC REVISIONS GP 00 A LL RIGHTS RESERVED. COPYRIGHT DIST BY TYCO ELECTRONICS CORPORATION. LTR DESCRIPTION DWN DATE REDRAWN PER EC 0 S 1 3 - 0 1 4 8 - 0 4 APVD TS JG 08MAR05 A 9- Q D y il il il r i 11 11 11 I I

59472

Abstract: 2222 050 17103 115 ped-st capacitor
Contextual Info: 106 PED-ST Vishay BCcomponents Aluminum Capacitors Power Eurodin Screw Terminals FEATURES • Polarized aluminum electrolytic capacitors, non-solid electrolyte • Large types, cylindrical aluminum case, insulated with a blue sleeve • Also available in bolt version 106 PED-STB

TESP5700

Contextual Info: TESP5700 Vishay Semiconductors Silicon PIN Photodiode Description TESP5700 PIN photodiode is applicable to high speed data transmission specifically at low reverse voltage. Black epoxy package include side view lens and daylight filter, matched to high speed IR emitters.

ic 8237

Contextual Info: BPW16N Vishay Semiconductors Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily

Contextual Info: TSTS7300 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description The TSTS730. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their glass lenses provide a high radiant intensity without external optics.

Contextual Info: BPW46 Vishay Semiconductors Silicon PIN Photodiode Description BPW46 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. Due to its waterclear epoxy the device is sensitive to visible and infrared radiation. The large active area combined with a flat case gives

Contextual Info: TSMF3710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSMF3710 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant

Contextual Info: TSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PLCC-2 SMD package. Features • • • • • SMT IRED with extra high radiant power

Contextual Info: TSTS7500 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description The TSTS750. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their flat glass windows make them ideal for use with external optics.

Contextual Info: TSUS4400 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSUS4400 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. The device is spectrally matched to silicon photodetectors.

Contextual Info: BPW82 Vishay Semiconductors Silicon PIN Photodiode Description BPW82 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitters λ p ≥ 800 nm .

Contextual Info: TEMD1000 / 1020 / 1030 / 1040 Vishay Semiconductors Silicon PIN Photodiode TEMD1000 Description TEMD1020 TEMD1000 series are high speed silicon PIN photodiodes molded in SMT package with dome lens. Due to integrated Daylight filter devices are sensitive for IR radiation only.

Contextual Info: TSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Description TSMG3700 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant

Contextual Info: TEMT3700F Vishay Semiconductors Silicon NPN Phototransistor Description TEMT3700F is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-2 package with integrated IR band pass filter 950 nm . Features • • • • • High sensitivity

Contextual Info: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant

Contextual Info: BPV10 Vishay Semiconductors Silicon PIN Photodiode Description BPV10 is a very high speed and high sensitive PIN photodiode in a standard T-1¾ plastic package. Due to its waterclear epoxy the device is sensitive to visible and infrared radiation. Features

VSM85

Abstract: CERAMIC LEADLESS CHIP CARRIER LCC 32 socket
Contextual Info: VSM85, 86, 87, 88, 89 Vishay Foil Resistors SURFACE MOUNT Bulk Metal Foil Technology Surface Mount Hermetic Resistor Networks In Leadless Chip Carrier LCC Configuration Vishay Model VSM networks incorporate all the performance features of Vishay Bulk Metal® Foil technology in a product

CERAMIC LEADLESS CHIP CARRIER LCC 52 socket

Abstract: VSM85
Contextual Info: VSM85, 86, 87, 88, 89 Vishay Foil Resistors SURFACE MOUNT Bulk Metal Foil Technology Surface Mount Hermetic Resistor Networks In Leadless Chip Carrier LCC Configuration Vishay Model VSM networks incorporate all the performance features of Vishay Bulk Metal® Foil technology in a product

l 708

Abstract: STM705 STM706 STM707 STM708 STM813L 813L 29ac
Contextual Info: STM705, STM706, STM707, STM708, STM813L 5V Supervisor FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ 5V OPERATING VOLTAGE PRECISION VCC MONITOR – STM705/707/813L 4.50V ≤ VRST ≤ 4.75V – STM706/708 4.25 ≤ VRST ≤ 4.50V RST AND RST OUTPUTS

BPW96

Contextual Info: BPW96 Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ ∅ 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near

TSAL infrared

Contextual Info: TSAL5300 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL5300 is a high efficiency infrared emitting diode in GaAs technology, molded in clear, bluegrey tinted plastic packages. 96 11505 Features Applications •

VPR247

Contextual Info: VHP-3, VHP-4, VPR247 Vishay Foil Resistors Bulk Metal Foil Technology Hermetically Sealed Power and Current Sensing Resistors FEATURES • Temperature Coefficient of Resistance Nominal TCR3: + 0.6ppm/°C 0°C to + 25°C ; – 0.6ppm/°C (+ 25°C to + 60°C);

Contextual Info: TSTS7500 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description The TSTS750. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their flat glass windows make them ideal for use with external optics.