TSFF5210 Search Results
TSFF5210 Price and Stock
Vishay Semiconductors TSFF5210-CS12EMITTER IR 870NM 100MA RADIAL |
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TSFF5210-CS12 | Cut Tape | 657 | 1 |
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Vishay Semiconductors TSFF5210EMITTER IR 870NM 100MA RADIAL |
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TSFF5210 | Bulk | 4,000 |
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TSFF5210 | 403 |
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Vishay Intertechnologies TSFF5210Infrared Emitter 870nm 1800mW/sr Circular Top Mount 2-Pin T-1 3/4 Bulk |
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TSFF5210 | 2,215 | 16 |
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TSFF5210 | 2,215 | 15 Weeks | 1 |
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TSFF5210 | Bulk | 16 | 1 |
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TSFF5210 | 500 |
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TSFF5210 | 400 |
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TSFF5210 | 1 |
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TSFF5210 | 1,100 |
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Vishay Intertechnologies TSFF5210-CS12Ir Emitter, 870Nm, 180Mw/Sr, T-3/4; Peak Wavelength:870Nm; Angle Of Half Intensity:10°; Diode Case Style:T-1 3/4 (5Mm); Radiant Intensity (Ie):180Mw/Sr; Rise Time:15Ns; Fall Time Tf:15Ns; Forward Current If(Av):100Ma; Product Range:-Rohs Compliant: Yes |Vishay TSFF5210-CS12 |
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TSFF5210-CS12 | Bulk | 809 | 1 |
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Vishay Siliconix TSFF5210TSFF5210 IR LED, 870nm, T-1 3/4 (5mm) Through Hole package |
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TSFF5210 | Bulk | 4,000 |
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TSFF5210 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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TSFF5210 | Vishay Siliconix | Infrared emitting diodes | Original | 127.43KB | 5 | |||
TSFF5210-CS12 | Vishay Semiconductor Opto Division | Optoelectronics - Infrared, UV, Visible Emitters - EMITTER IR 870NM 100MA RADIAL | Original | 115.8KB |
TSFF5210 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant |
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TSFF5210 TSFF5210 2002/95/EC 2002/9s 08-Apr-05 | |
TSFF5210Contextual Info: TSFF5210 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant |
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TSFF5210 TSFF5210 D-74025 23-Jun-04 | |
Contextual Info: TSFF5210 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant |
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TSFF5210 TSFF5210 D-74025 04-May-04 | |
Contextual Info: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant |
Original |
TSFF5210 TSFF5210 2002/95/Eany 18-Jul-08 | |
Contextual Info: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • Package type: leaded Package form: T-1 3/4 Dimensions in mm : ∅ 5 Leads with stand-off Peak wavelength: λp = 870 nm |
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TSFF5210 2002/95/EC 2002/96/EC TSFF5210 11-Mar-11 | |
Contextual Info: TSFF5210 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES 94 8390 • • • • • Package type: leaded Package form: T-1 3/4 Dimensions in mm : Ø 5 Leads with stand-off Peak wavelength: p = 870 nm |
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TSFF5210 2002/95/EC 2002/96/EC TSFF5210 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: TSFF5210 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant |
Original |
TSFF5210 TSFF5210 D-74025 03-Jun-04 | |
Contextual Info: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant |
Original |
TSFF5210 TSFF5210 2002/95/Es 08-Apr-05 | |
Contextual Info: TSFF5210 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES 94 8390 • • • • • Package type: leaded Package form: T-1 3/4 Dimensions in mm : Ø 5 Leads with stand-off Peak wavelength: p = 870 nm |
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TSFF5210 TSFF5210 2002trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant |
Original |
TSFF5210 TSFF5210 2002/95/EC 2002/9ake D-74025 08-Mar-05 | |
Contextual Info: TSFF5210 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES 94 8390 • • • • • Package type: leaded Package form: T-1 3/4 Dimensions in mm : Ø 5 Leads with stand-off Peak wavelength: p = 870 nm |
Original |
TSFF5210 2002/95/EC 2002/96/EC TSFF5210 11-Mar-11 | |
TSFF5210Contextual Info: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • Package type: leaded Package form: T-1 3/4 Dimensions in mm : ∅ 5 Leads with stand-off Peak wavelength: λp = 870 nm |
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TSFF5210 2002/95/EC 2002/96/EC TSFF5210 18-Jul-08 | |
TSFF5210Contextual Info: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1 3/4 • Dimensions in mm : ∅ 5 • Leads with stand-off • Peak wavelength: λp = 870 nm |
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TSFF5210 TSFF5210 18-Jul-08 | |
Contextual Info: TSFF5210 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant |
Original |
TSFF5210 TSFF5210 D-74025 13-Apr-04 | |
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TSSP4038Contextual Info: V i s h ay I nte r tec h nolog y, I nc . OPTOELECTRONICS Optoelectronics – Products for Industrial Applications Guide to Industrial Applications TABLE OF CONTENTS Introduction. 2 |
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VMN-MS6520-1311 TSSP4038 | |
A 69157 scr
Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
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90F8548 SDP8600-001 95F5325 SDP8371-001 28H5849 28H5850 OPB933W55Z 08F2750 OPB963T55 08F2755 A 69157 scr 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3 | |
schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
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P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS | |
mdd 2605
Abstract: HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943
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element-14 element14 mdd 2605 HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943 | |
tept5600 response time
Abstract: Application NOTES TSAL4400 BPV11F Photo interrupter application notes SMD Transistor 1020 "Photo Interrupter" dual transistor CNY70 cny70 datasheet TEMT6000 TCND5000
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emit4-9337-2920 VSA-SG0041-0512 tept5600 response time Application NOTES TSAL4400 BPV11F Photo interrupter application notes SMD Transistor 1020 "Photo Interrupter" dual transistor CNY70 cny70 datasheet TEMT6000 TCND5000 | |
Leader 8020 schematics Oscilloscope
Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
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vse-db0103-0810 Leader 8020 schematics Oscilloscope smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s | |
diode SR 360
Abstract: IEC 62471 60825-1 IEC-60825 diode sr 60 IEC62471 DIN 875 VSLB3940X01 IEC 60825-1 diode SR 360 datasheet
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11-Sep-08 diode SR 360 IEC 62471 60825-1 IEC-60825 diode sr 60 IEC62471 DIN 875 VSLB3940X01 IEC 60825-1 diode SR 360 datasheet | |
751-1201-ND
Abstract: BPW21R 751-1001-ND 751-1213-ND 751-1013-ND 751-1002-ND BPW41N BPW77NA 751-1015-ND 751-1043-1-ND
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751-1003-ND 751-1004-ND 751-1023-ND 751-1041-ND 751-10TSAL7600 TSFF5210 TSFF5410 TSHF5210 TSHF5410 TSHG6200 751-1201-ND BPW21R 751-1001-ND 751-1213-ND 751-1013-ND 751-1002-ND BPW41N BPW77NA 751-1015-ND 751-1043-1-ND | |
Infrared sensor TSOP 1738
Abstract: vo1263 V01263 tsop Ir sensor 710 opto coupler Infrared Receiver Sensor photo interrupter module TCND5000 DUAL IR REFLECTIVE SENSOR TCPT1300
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sensor BPW34 application note
Abstract: touch sensitive siren using transistor tsop sensor Infrared sensor TSOP 1738 vo2223 vo3120 infrared signal transmission distance sensor BPW34 application note APPLICATION NOTE BpW34 BP104 application note
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VMN-MS6520-1012 sensor BPW34 application note touch sensitive siren using transistor tsop sensor Infrared sensor TSOP 1738 vo2223 vo3120 infrared signal transmission distance sensor BPW34 application note APPLICATION NOTE BpW34 BP104 application note |