104 Ceramic Disc Capacitors 100v
Abstract: Ceramic Disc Capacitors 100v vishay D689C2 LV 100 V
Text: LV 100 V Narrow Tolerance Vishay BCcomponents Ceramic Disc Capacitors Class 1, 100 V DC Narrow Tolerance FEATURES • Low losses • High stability D e3 • High capacitance in small size tangent line • Kinked (preferred) or straight leads RoHS • Lead (Pb)-free available
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08-Apr-05
104 Ceramic Disc Capacitors 100v
Ceramic Disc Capacitors 100v vishay
D689C2
LV 100 V
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Untitled
Abstract: No abstract text available
Text: 024/025 AMR Vishay BCcomponents Aluminum Capacitors Axial Miniature Range FEATURES • Polarized aluminum electrolytic capacitors, non-solid electrolyte • Axial leads, cylindrical aluminum case, insulated with a blue sleeve 022/023 ASR 105/85 °C smaller
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08-Apr-05
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Untitled
Abstract: No abstract text available
Text: HV 500 V Vishay BCcomponents Ceramic Disc Capacitors Class 1 and 2, 500 V DC General Purpose FEATURES D • Low losses • High stability e2 • High capacitance in small size tangent line SH • Kinked (preferred) or straight leads RoHS • Lead (Pb)-free available
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08-Apr-05
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TSHG8400
Abstract: 08MAR06
Text: TSHG8400 Vishay Semiconductors High Speed Infrared Emitting Diode in T-1¾ Package Description TSHG8400 is a high speed infrared emitting diode in GaAlAs double hetero DH technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant
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TSHG8400
TSHG8400
2002/ed
08-Apr-05
08MAR06
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Untitled
Abstract: No abstract text available
Text: MBRF1090CT & MBRF10100CT Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability
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MBRF1090CT
MBRF10100CT
2002/95/EC
2002/96/EC
ITO-220AB
J-STD-002B
JESD22-B102D
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: STE Vishay Sprague SuperTan Extended STE Capacitors Wet Tantalum Capacitors with Hermetic Seal FEATURES Vishay SuperTan® Extended (STE) represents a major breakthrough in wet tantalum capacitor technology. Its unique cathode system, also used in the ST, provides the
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08-Apr-05
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D689C2
Abstract: D689C20U HV500V
Text: HV 500 V Narrow Tolerance Vishay BCcomponents Ceramic Disc Capacitors Class 1, 500 V DC Narrow Tolerance FEATURES • Low losses • High stability D e3 • High capacitance in small size tangent line • Kinked (preferred) or straight leads RoHS • Lead (Pb)-free available
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08-Apr-05
D689C2
D689C20U
HV500V
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Untitled
Abstract: No abstract text available
Text: TEMT6000 Vishay Semiconductors Ambient Light Sensor Description TEMT6000 ambient light sensor plays a key role in power savings strategies by controlling LCD display intensity and keypad backlighting of mobile devices and in industrial on/off-lighting operation. It is sensitive
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TEMT6000
TEMT6000
08-Apr-05
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MMBZ27VDA
Abstract: No abstract text available
Text: MMBZ27VDA-V Vishay Semiconductors Small Signal Zener Diodes, Dual Features • Dual Silicon Planar Zener Diodes with Common Anode configurations e3 • Dual package provides for Bidirectional or separate unidirectional configurations • The dual configurations protect two separate lines
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MMBZ27VDA-V
2002/95/EC
2002/96/EC
MMBZ27VDA
OT-23
08-Apr-05
MMBZ27VDA
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S180K
Abstract: S150-M
Text: HV 1 kV - 6 kV Vishay BCcomponents Ceramic Disc Capacitors Class 1 and 2, 1/2/3/6 kV General Purpose D tangent line FEATURES D SH tangent line SH • • • • • Low losses High stability High capacitance in small size Kinked preferred or straight leads.
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08-Apr-05
S180K
S150-M
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Untitled
Abstract: No abstract text available
Text: SBL10L25, SBLF10L25, SBLB10L25 Vishay General Semiconductor Low VF Schottky Barrier Rectifier TO-220AC FEATURES • Guardring for overvoltage protection ITO-220AC • Lower power losses, high efficiency • Very low forward voltage drop • High forward surge capability
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SBL10L25,
SBLF10L25,
SBLB10L25
SBL10L25
O-220AC
ITO-220AC
SBLF10L25
O-263AB
J-STD-020C
2002/95/EC
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MMBZ27VDA-V
Abstract: MMBZ27VDA
Text: MMBZ27VDA-V Vishay Semiconductors Small Signal Zener Diodes, Dual Features • Dual Silicon Planar Zener Diodes with Common Anode configurations e3 • Dual package provides for Bidirectional or separate unidirectional configurations • The dual configurations protect two separate lines
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MMBZ27VDA-V
2002/95/EC
2002/96/EC
MMBZ27VDA
OT-23
18-Jul-08
MMBZ27VDA-V
MMBZ27VDA
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EN60825-1
Abstract: IEC60825-1 TFBS4650 TFBS4650-TR1 TFBS4650-TR3
Text: TFBS4650 Vishay Semiconductors Infrared Transceiver 9.6 kbit/s to 115.2 kbit/s SIR Description The TFBS4650 is one of the smallest IrDA compliant transceivers available. It supports data rates up to 115 kbit/s. The transceiver consists of a PIN photodiode, infrared emitter, and control IC in a single package.
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TFBS4650
TFBS4650
cm/20
08-Apr-05
EN60825-1
IEC60825-1
TFBS4650-TR1
TFBS4650-TR3
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24c05
Abstract: csi 24c02 CSI 24C08 24C03 CSI 24c16 CSI 24C04 24c16 EEPROM csi 24C01 24C04 CSI 24C08
Text: CAT24C03/05 2-Kb and 4-Kb I2C Serial EEPROM with Partial Array Write Protection FEATURES DEVICE DESCRIPTION • Supports Standard and Fast I2C Protocol The CAT24C03/CAT24C05 is a 2-kb/4-kb CMOS Serial EEPROM device organized internally as 16/32 pages of 16 bytes each, for a total of 256x8/512x8 bits. These
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CAT24C03/05
16-Byte
CAT24C03/CAT24C05
256x8/512x8
100kHz)
400kHz)
MD-1116,
24c05
csi 24c02
CSI 24C08
24C03
CSI 24c16
CSI 24C04
24c16 EEPROM
csi 24C01
24C04 CSI
24C08
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30H60CT
Abstract: MBR30H35CT
Text: MBR F,B 30H35CT thru MBR(F,B)30H60CT New Product Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier High Barrier Technology for improved high temperature performance TO-220AB FEATURES • Guardring for overvoltage protection ITO-220AB • Lower power losses, high efficiency
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30H35CT
30H60CT
O-220AB
ITO-220AB
MBR30HxxCT
MBRF30HxxCT
O-263AB
J-STD-020C
2002/95/EC
2002/96/EC
30H60CT
MBR30H35CT
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29f16g08
Abstract: intel nand flash JS29F16G08FANB1 intel date code marking nand flash INTEL FLASH MEMORY 29F JS29F08G08 intel nand JS29F04G08AANB1 intel 29F SD74 intel
Text: Intel SD74 NAND Flash Memory JS29F04G08AANB1, JS29F08G08CANB1, JS29F16G08FANB1 Datasheet Product Features Single-level cell SLC Technology Organization: — Page size: x8: 2,112 bytes (2,048 + 64 bytes) — Block size: 64 pages (128K + 4K bytes) — Plane size: 2,048 blocks
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JS29F04G08AAN29F04G08AANB1
1000pc
JS29F08G08CANB1
29F08G08CANB1
JS29F16G08FANB1
29F16G08FANB1
8-Sep-2006
312774-007US
29f16g08
intel nand flash
JS29F16G08FANB1
intel date code marking nand flash
INTEL FLASH MEMORY 29F
JS29F08G08
intel nand
JS29F04G08AANB1
intel 29F
SD74 intel
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AR06
Abstract: No abstract text available
Text: r 7 8 THIS DRAWING IS U N PU B LIS H E D . COPYRIGHT 2006 RELEASED BY TYCO ELECTRONICS CORPORATION. 5 n 3 2 FOR PUBLICATION A L L RIGHTS LOC RESERVED . REVISIO NS D IS T GP 00 D ES C RIPTIO N A GP 08MAR06 RELEASED PER EC OS13 - 0 0 2 4 - 0 5 JG RECOMMENDATIONS FOR 2 .3 6 [.0 9 3 ] THK PC BOARD:
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08MAR06
HOUS08M
AR2000
AR06
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Untitled
Abstract: No abstract text available
Text: ¡p- 2 3 4 LOC 1 D I 5T GP REV I 5 IONS 00 p F ZONE LTR D E 5 C R I P T I ON D1 REVISED PER ECO DATE 06-004646 08MAR06 APPD JG _ - > 1A FLAME RETARDANT BBT, BE94V-0 RATED, OODOR RDD. 2\ D D A MD RDTARDANT DDT, BE94V-0 DATDD, DO D OD BDADE. 3. TO BSEB AMB-EATBD
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U5026A
DEPT4021
DK4021
08MAR06
0D94V-0
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Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2006 5 6 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC REVISIONS DIST GP oo ALL RIGHTS RESERVED. LTR DESCRIPTION A 3 0 . 8 1 ± 0.38[1.21 3 + .0 15] RECOMMENDATIONS —24.99-[.9 8 4 ] 16.33[.643]
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31MAR2000
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typ247
Abstract: No abstract text available
Text: r 6 7 T H IS D R A W IN G IS U N P U B L IS H E D . RELEASED ALL C O P Y R IG H T - B Y TYCO E LE C TR O N IC S FO R n 5 4 2 3 P U B L IC A T IO N R IG H T S D IST LOC R E V I S I ON S GP 00 RESERVED. C O R P O R A TIO N . LTR A HO US ING : OR D FLAME P O LYE STE R,
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08MAR06
15SEP05
31MAR2000
us012439
\drnrnod\5745394-c
typ247
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DD94V-0
Abstract: No abstract text available
Text: 3 DRAWING MADE THIS IN THIRD DRAWING ANGLE IS PROJECTION UNPUBLISHED. REDEASED COPYRIGHT BY AMP FUR LOC P U B D I G A T I ON INCORPORATED. ALL INTERNATIONAL RIGHTS D I ST R E V I 5 IONS RESERVED. D E S C R I P T I ON B2 REVISED PER ECO DATE 06-004646 APPD
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08MAR06
-MAR-94
amp34723
p/amp34723/edmmod
DD94V-0
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Untitled
Abstract: No abstract text available
Text: 6 7 TH IS DRAWING IS U N P U B LIS H E D . RELEASED ALL COPYRIGHT - FOR 5 PUBLICATION RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. D AREA 1 5 .2 4 [ .6 0 0 ] o i <> 0 .2 5 o i C c s TYP 0 . 2 5 [ . 0 1 0 ](D D(s) TYP 0.00 [. 000 ] 0.00 [. 000 ] XX
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Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2006 4 5 6 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. REVISIONS D IS T GP 00 LTR DESCRIPTION B RECOMMENDATIONS D FOR 2 .3 6 [ .0 9 3 ] PC A. HOLE DIAMETER B. 0. D. HOLE DIAMETER
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130CT10
62/xm
UL94V-0
08MAR06
31MAR2000
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Untitled
Abstract: No abstract text available
Text: 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 200 6 6 7 RELEASED FOR PUBLICATION 5 4 2 3 - ALL RIGHTS RESERVED. By - 1 REVISIONS LOC DIST GP 00 p LTR DESCRIPTION c REVISED PER DATE DWN 26JAN 2012 E C O - 12 - 0 0 0 0 9 0 APVD CJV SLB 3 0 . 8 1 ±0.38[ 1 . 2 1 3 + .0 1 5]
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26JAN
08jum
UL94V-0
08MAR06
5M-2009
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