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    09005AEF80BE2036 Datasheets Context Search

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    TCO 706

    Contextual Info: PRELIMINARY‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB MT45W2MW16BFB MT45W4ML16BFB MT45W2ML16BFB Features Figure 1: Ball Assignment 54-Ball FBGA • • • • • • • • Single device supports asynchronous, page, and burst


    Original     		MT45W4MW16BFB MT45W2MW16BFB MT45W4ML16BFB MT45W2ML16BFB 54-Ball 09005aef80be2036/09005aef80be1fbd TCO 706 PDF

    Contextual Info: ADVANCE‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB MT45W2MW16BFB MT45W4ML16BFB MT45W2ML16BFB Features Figure 1: Ball Assignment 54-Ball FBGA For the latest data sheet, please refer to Micron’s Web site:


    Original     		09005aef80be2036/09005aef80be1fbd PDF

    PX3541

    Abstract: PX3551 Burst CellularRAM Memory PW245 T2025
    Contextual Info: ADVANCE‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB MT45W2MW16BFB Features Figure 1: Ball Assignment 54-Ball FBGA For the latest data sheet, please refer to Micron’s Web site: www.micron.com/datasheets.


    Original     		MT45W4MW16BFB MT45W2MW16BFB 54-Ball Int/03 09005aef80be2036/09005aef80be1fbd PX3541 PX3551 Burst CellularRAM Memory PW245 T2025 PDF

    Contextual Info: 4 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ • Random Access Time: 70ns


    Original     		09005aef80be1fbd pdf/09005aef80be2036 PDF

    PX245

    Abstract: PX2511 pw251 BCR150
    Contextual Info: ADVANCE‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB MT45W2MW16BFB Features Figure 1: Ball Assignment 54-Ball FBGA For the latest data sheet, please refer to Micron’s Web site: www.micron.com/datasheets.


    Original     		09005aef80be2036/09005aef80be1fbd PX245 PX2511 pw251 BCR150 PDF

    MT45W4MW16B

    Abstract: MT45W4MW16BFB-708LWT
    Contextual Info: 64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAMTM 1.0 Memory MT45W4MW16B* *Note: Not recommended for new designs. For the latest data sheet, refer to Micron’s Web site: http://www.micron.com/products/psram/


    Original     		MT45W4MW16B* 09005aef80be1fbd/Source: 09005aef80be2036 MT45W4MW16B MT45W4MW16BFB-708LWT PDF

    Contextual Info: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAMTM 1.0 Memory MT45W4MW16BFB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages 1.70V–1.95V VCC


    Original     		MT45W4MW16BFB 09005aef80be1fbd/Source: 09005aef80be2036 PDF

    DEVICE MARKING CODE table

    Abstract: INFINEON transistor marking INFINEON TVS diode process marking code C5 marking code j6 sus material 304 MT45W4MW16B thd202
    Contextual Info: 4 MEG x 16 ASYNC/PAGE/BURST CellularRAM 1.0 MEMORY ASYNC/PAGE/BURST CellularRAMTM 1.0 MEMORY MT45W4MW16BFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ


    Original     		MT45W4MW16BFB 54-Ball 09005aef80be1fbd pdf/09005aef80be2036 DEVICE MARKING CODE table INFINEON transistor marking INFINEON TVS diode process marking code C5 marking code j6 sus material 304 MT45W4MW16B thd202 PDF

    Contextual Info: 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB MT45W2MW16BFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ


    Original     		MT45W4MW16BFB MT45W2MW16BFB 54-Ball pdf/09005aef80be2036 09005aef80be1fbd PDF

    MT45W4MW16BFB-708LWT

    Contextual Info: x16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAMTM 1.0 Memory MT45W4MW16BFB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages 1.70V–1.95V VCC


    Original     		MT45W4MW16BFB 09005aef80be1fbd/Source: 09005aef80be2036 MT45W4MW16BFB-708LWT PDF