09N03 Search Results

09N03

Abstract: PJD09N03
Contextual Info: 09N03 25V N-Channel Enhancement Mode MOSFET TO-252 FEATURES • RDS ON , VGS@10V,IDS@30A=9mΩ • RDS(ON), VGS@4.5V,IDS@30A=12mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers

09n03lb

Abstract: 09N03 09N03L TRANSISTOR SMD MARKING CODE 42 IPD09N03LB PG-TO252-3-11 IPD09N03LBG
Contextual Info: OptiMOS 2 Power-Transistor 09N03LB G 09N03LB G 09N03LB G 09N03LB G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 9.1 mΩ ID 50 A • N-channel, logic level

Contextual Info: Preliminary data 09N03LA 09N03LA,09N03LA OptiMOSâ 2 Power-Transistor Product Summary Feature Ideal for high-frequency dc/dc converters  N-Channel  Logic Level  Excellent Gate Charge x RDS on product (FOM)  Very low on-resistance RDS(on) P- TO262 -3-1

09n03la

Abstract: IPB09N03LA 09N03 IPI09N03LA IPP09N03LA Q67042-S4151
Contextual Info: 09N03LA 09N03LA, 09N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 8.9 mΩ ID 50 A • Logic level • Excellent gate charge x R DS(on) product (FOM)

09N03

Abstract: S4264 09n03lb IPD09N03LB JESD22 PG-TO252-3-11 P-TO252-3-11 Q67042-S4264
Contextual Info: 09N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 30 V R DS on),max 9.1 mΩ ID 50 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)

09N03

Abstract: PJ09N03D 09n03d
Contextual Info: 09N03D 25V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=9mΩ • RDS(ON), VGS@4.5V,IDS@30A=16mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers

09n03la

Abstract: IPB09N09LA IPP09N03LA 09n03 Q67042-S4152 Q67042-S4153 09n03l
Contextual Info: Preliminary data 09N03LA 09N03LA,IPB09N09LA OptiMOSâ 2 Power-Transistor Product Summary Feature Ideal for high-frequency dc/dc converters  N-Channel  Logic Level  Excellent Gate Charge x RDS on product (FOM)  Very low on-resistance RDS(on) P- TO262 -3-1

09N03

Abstract: DS9256 RT9256 SS0520 09N03LT
Contextual Info: RT9256 Preliminary Actively Alternative Mode Two-Phase / Dual Switching PWM Controller General Description Features The RT9256 is an analogous current mode design and is specifically promoted for high power density consideration platform with MLCC capacitor attached, such as high-end

mosfet 09n03la

Abstract: mosfet 06N03LA 2N3904 M5 09N03LA C3312 13n03la 06n03la D1N4148 m7 MOSFET SC2677BEVB-1
Contextual Info: SC2677B Dual Synchronous Voltage Mode Controller with Current Sharing Circuitry POWER MANAGEMENT Description Features The SC2677B is a versatile 2 phase, synchronous, voltage mode PWM controller that can be used in two distinct ways. First, the SC2677B is ideal for applications

09N03

Abstract: MEN09N03 MEN09N03BJ3 i 09N03 C430J3 09n0
Contextual Info: CYStech Electronics Corp. Spec. No. : C430J3 Issued Date : 2008.10.20 Revised Date :2009.02.04 Page No. : 1/7 N-Channel Logic Level Enhancement Mode Power MOSFET 09N03BJ3 BVDSS 30V ID 50A RDSON 9mΩ Features • VDS=30V, ID=50A, RDS ON =9mΩ • Low Gate Charge

09N03L

Abstract: 09N03 IPD09N03L P-TO252 Q67042-S4110
Contextual Info: 09N03L Preliminary data OptiMOS
=Buck converter series Product Summary Feature  N-Channel  Logic Level  Low on-resistance RDS on  Excellent Gate Charge x RDS(on) product (FOM) VDS 30 V RDS(on) 8.9 m
ID 30 A P-TO252
Superior thermal resistance 175°C operating temperature

09n03la

Abstract: 09N03LA datasheet 09N03LA equivalent IPS09N03LA 09N03 IPD09N03LA 09N03L smd diode code sd IPF09N03LA IPU09N03LA
Contextual Info: OptiMOS 2 Power-Transistor 09N03LA 09N03LA 09N03LA 09N03LA Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 8.6 mΩ ID 50 A • N-channel, logic level

09N03LA

Abstract: IPS09N03LA 09N03 diode marking 321 09N03LA datasheet IPD09N03LA 09N03LA equivalent IPF09N03LA IPU09N03LA P-TO251-3-1
Contextual Info: 09N03LA G 09N03LA G OptiMOS 2 Power-Transistor 09N03LA G 09N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 8.6 mΩ ID

Contextual Info: RT9256 Preliminary Actively Alternative Mode Two-Phase / Dual Switching PWM Controller General Description Features The RT9256 is an analogous current mode design and is specifically promoted for high power density consideration platform with MLCC capacitor attached, such as high-end

Contextual Info: RT9256 Preliminary Actively Alternative Mode Two-Phase / Dual Switching PWM Controller General Description Features The RT9256 is an analogous current mode design and is specifically promoted for high power density consideration platform with MLCC capacitor attached, such as high-end

09n03la

Abstract: 09N03 IPB09N03LA 09N03LA equivalent Q67042-S4151 TRANSISTOR SMD MARKING CODE 42 IPI09N03LA IPP09N03LA smd code D50 09n03l
Contextual Info: 09N03LA 09N03LA, 09N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 8.9 mΩ ID 50 A • Logic level • Excellent gate charge x R DS(on) product (FOM)

IPD09N03LA

Abstract: 09N03 IPD09N03LA G 09N03LA P-TO252-3-11 Q67042-S4154
Contextual Info: 09N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max 8.6 mΩ ID 50 A • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)

09N03LA

Abstract: IPS09N03LA IPD09N03LA 09N03 09N03LA datasheet 09N03LA equivalent IPU09N03LA equivalent IPF09N03LA IPU09N03LA P-TO252-3-11
Contextual Info: 09N03LA G 09N03LA G OptiMOS 2 Power-Transistor 09N03LA G 09N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 8.6 mΩ ID

09N03

Abstract: 09n03lb 09n03l IPD09N03LB PG-TO252-3-11
Contextual Info: 09N03LB G 09N03LB G 09N03LB G 09N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max (SMD version) 9.1 mΩ

09N03

Abstract: 09n03la IPF09N03LA P-TO252-3-23
Contextual Info: 09N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max 8.9 mΩ ID 50 A • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)

IPD09N03LA

Abstract: 09n03la
Contextual Info: 09N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max 8.6 mΩ ID 50 A • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)

IPS09N03LA

Abstract: IPD09N03LA
Contextual Info: 09N03LA G 09N03LA G OptiMOS 2 Power-Transistor 09N03LA G 09N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target application V DS 25 V R DS on),max (SMD version) 8.6 mΩ

IPI09N03LA

Contextual Info: 09N03LA, 09N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max 9.2 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

09N03

Abstract: 09n03la PG-TO263-3-2 PG-TO-263-3-2 09N03LA equivalent IPB09N03LA JESD22 09N03L
Contextual Info: 09N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 8.9 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)