09SEP2003 Search Results

SD3932

Abstract: pF CAPACITOR 100v 700B
Contextual Info: SD3932 RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary Data Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 26.8 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC

100C

Abstract: 700B SD3932
Contextual Info: SD3932 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 26.8 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European directive Description

J4-14

Abstract: 17pm k 17pm_ 09SEP2003
Contextual Info: THIS DRAWING IS UNPUBLISHED. ]£E COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ÀLL KISfflT'RËàERVED. REVISIONS DIST J P DATE DESCRIPTION LTR D E REDRAWN FJDO— 0307— 03 REVISED F REVISED DWN APVD 13NOV03 A.O FJDO— 0 2 2 4 — 04

100C

Abstract: 700B SD3932
Contextual Info: SD3932 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 26.8 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European directive

N851

Abstract: STN851
Contextual Info: STN851 Low voltage fast-switching NPN power transistor Features • Very low collector to emitter saturation voltage ■ High current gain characteristic ■ Fast-switching speed 4 Applications 1 ■ Emergency lighting ■ Voltage regulators ■ Relay drivers

Contextual Info: SD3932 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 26.8 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European directive Description

Contextual Info: 3 R ELEASED FOR PUBLICATION T HIS DRAWING IS UNPU BLISHED. s z BY TYCO ELECTRONICS CORPORATION. COPYRIGHT R E V IS IO N S SE D IST LOC J ALL RIGHTS R ESERVED. p D ESCR IPTIO N LTR c C1 DATE REVISED FJDO— 0224—04 REVISED E C R — 05—014527 DWN APVD Y.Y N.Y

Contextual Info: STN851 Low voltage fast-switching NPN power transistor Features • Very low collector to emitter saturation voltage ■ High current gain characteristic ■ Fast-switching speed 4 Applications 1 ■ Emergency lighting ■ Voltage regulators ■ Relay drivers

SD3932

Contextual Info: SD3932 RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary Data Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 26.8 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC