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    0D304 Search Results

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    0D304 Price and Stock

    MELTRIC Corporation 513P0D30473

    CONN BACKSHELL SZ3 BLUE
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    DigiKey 513P0D30473 Bulk 1
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    RS 513P0D30473 Bulk 3 3 Weeks 1
    • 1 $69.6
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    Vishay Dale EB41-S0D304XF

    CONN EDGE DUAL FMALE 60POS 0.100
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    Vishay Dale EB41-S0D3040X

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    Samtec Inc TCSD-10-D-304.80-01-F-N

    Cable Assembly Flat Ribbon 7.741m 28AWG 20 POS IDC Connector to 20 POS IDC Connector SKT-SKT IDT-IDT Bulk - Bulk (Alt: TCSD-10-D-304.80-0)
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    Avnet Americas TCSD-10-D-304.80-01-F-N Bulk 1
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    Samtec Inc IDSD-10-D-30.48-G

    Cable Assembly Flat Ribbon 0.774m 28AWG 20 POS IDC Connector to 20 POS IDC Connector SKT-SKT IDT-IDT Bulk - Bulk (Alt: IDSD-10-D-30.48-G)
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    Master Electronics IDSD-10-D-30.48-G
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    • 100 $9.84
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    0D304 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ADV MICRO MEMORY MAE D Q257S2Û 0D304Ô4 b IA M D 4 T -4 6 -1 3 -2 9 Advanced Micro Devices Am27C2048 2 Megabit (131,072 x 16-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ Fast access time -v 100 ns Low power consumption - 25 mA typical CMOS standby current


    OCR Scan     		PDF Q257S2Ã 0D304Ã Am27C2048 16-Bit) -40-pin 44-pin D257S2Ã D03DMn 05-006B

    16C256

    Abstract: KM416C256DJ
    Text: KM4 16 C 2 5 6 D J ELECTRONICS CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time


    OCR Scan     		PDF 1C256D 256Kx16 40SOJ KM416C256DJ 16C256 KM416C256DJ

    Untitled

    Abstract: No abstract text available
    Text: / CYPRESS PRELIMINARY W150 440BX AGPset Spread Spectrum Frequency Synthesizer Features Table 1. Mode Input Table • Maximized EMI suppression using Cypress’s Spread Spectrum Technology • Single chip system frequency synthesizer for Intel 440BX AGPset


    OCR Scan     		PDF 440BX 48-MHz 24-MHz G03D4Ã

    Zl11

    Abstract: A12C
    Text: ADV MI CRO MEMORY 4ÔE » 0E5755Ö GÜ3 D4 b ö ö • AÎ1DM T—46—13-29 Advanced Micro Devices Am27C020 2 Megabit (262,144 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ 100% Flashrlte programming -typical programming time of 30 seconds Fast access time


    OCR Scan     		PDF 0E5755Ã T-46-13-29 Am27C020 28-pin 32-pln 27C020 DG304Ã 10205-006B Zl11 A12C

    L3103L

    Abstract: No abstract text available
    Text: PD - 9.1617B International I R Rectifier IR F 33 15S /L PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF3315S • Low-profile through-hole (IRF3315L) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated


    OCR Scan     		PDF 1617B IRF3315S) IRF3315L) 4A55452 L3103L

    D0304

    Abstract: T-46
    Text: ADV MI CRO MEMORY 4ÖE 02S7S2Ö J> 003D4S3 h • AMD4 T - 46-13-29 Advanced Micro Devices A m 2 7 C 1 0 2 4 1 Megabit (65,536 x 16-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ High Speed Flashrite programming ■ Fast access tim e — 100 ns ■ Low power consumption:


    OCR Scan     		PDF 02S7S2Ã 003D4S3 T-46-13-29 Am27C1024 16-Bit) 40-pin 0D304L 06780-009E D0304 T-46

    BUK436-100A

    Abstract: BUK436-100B
    Text: N AMER P H I L I P S / D I S C R E T E b*lE D • bbSa^Bl 0a3QMb0 T l f l ■ APX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF BUK436-100A/B -100A -100B 00304b4 BUK436-1OOA/B BUK436-100A BUK436-100B

    am27h10

    Abstract: No abstract text available
    Text: ADV MIC RO M E MO RY MfiE D • Ü25752Ô □ D 3 0 l)13 5 ■ A M D 1» T-46-13-29 A m 2 7 H 0 1 0 Advanced 1 Megabit (131,072 x 8-Bit) High Speed CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Industry's fastest -45ns 1 megabit CMOS EPROM ■ Versions available in industrial and military


    OCR Scan     		PDF T-46-13-29 -45ns Am27C010 Am27H010 withtheAm27C010 KS000010 2750-006A am27h10

    Untitled

    Abstract: No abstract text available
    Text: bRE D N AMER PH ILIP S /D IS C R E TE • bb53R31 00304bQ Rlfl ■ P hilips Sem ico nd uctors Pro d uct Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF bb53R31 00304bQ BUK436-100A/B BUK436 -100A -100B 0Q304b4

    optocoupler ic 6N136

    Abstract: OPTOCOUPLER 6N136 ic 6n136 6N136 IC philips 3120 6N135 6N136 MCB375 sot97f
    Text: PHILIPS MIE D m ?110a2b 0030400 3 BiPHIN INT ER NATIONAL - p v ; - ? 3 P h ilip s S e m ico n d u cto rs P ro d u c t s p e c ific a tio n High-speed optocouplers 6N135/6N136 FEATURES • Short propagation delay times • Low saturation voltage • High transient immunity


    OCR Scan     		PDF 110a2b 6N135/6N136 6N135 6N136) 6N136 OT97F optocoupler ic 6N136 OPTOCOUPLER 6N136 ic 6n136 6N136 IC philips 3120 MCB375 sot97f

    Untitled

    Abstract: No abstract text available
    Text: KM4 1 6C2 5 4 DT CMOS D R AM ELECTRONICS 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,


    OCR Scan     		PDF 256Kx16 KM416C254DT 00304flb

    Untitled

    Abstract: No abstract text available
    Text: KM416C1204BT CMOS D R A M ELECTRONICS 1 M x 1 6 B i t CMOS Dynamic HAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF KM416C1204BT 1Mx16 416C1204BT D03D425 DD3G42h

    CNW85

    Abstract: optocoupler ic MBB037 Optocoupler 601 philips 23 BS415 BS7002 CNW84 VDE0884
    Text: PH ILIP S 41E INTERNATIONAL 7iiQôab D oa3aHsa b m p h i n 7 " - v / - 8 3 P ro d u c t s p e c ific a tio n P h ilip s S e m ico n d u cto rs J C N W 8 4/C N W 85 H eavy duty o p to co u p lers FEATURES • Minimum 2 mm isolation thickness between emitter and


    OCR Scan     		PDF 711005b CNW84/CNW85 CNW84 CNW85 optocoupler ic MBB037 Optocoupler 601 philips 23 BS415 BS7002 VDE0884

    KM416C254DJ-7

    Abstract: C254D VL 7143
    Text: KM4 1 6 C 2 5 4 D J ELECTRONICS CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,


    OCR Scan     		PDF 6C254D 256Kx 256Kx16 T7JSDT27W nraEEES55BM5 KM416C254DJ 003045b KM416C254DJ-7 C254D VL 7143

    Untitled

    Abstract: No abstract text available
    Text: M.S. KENNEDY CORP. DUAL HIGH POWER OP-AMP 2541 8170 Thompson Road • Cicero, N.Y. 13039 315 699-9201 FEATURES: • High Output Current - 10 Amps Peak • Wide Power Supply Range - ±10V to ±40V • On Board Current Limit • Fet input • Isolated Case


    OCR Scan     		PDF 2541B Mil-H-38534