0DD47 Search Results

mps 1022

Contextual Info: MICRO POlilER SYSTEMS INC LIE D L.CH7MM14 0DD47Ö3 TTT « M P S \-5\-iMi MP8796 CMOS Very Low Power 10-Bit Analog-to-Digital Converter Micro Power Systems FEATURES BENEFITS • • • • • • • • • • • • • • • • • 10-Bit Resolution

ESJA52-12A

Abstract: HIGH VOLTAGE DIODE 12kv 22VZ
Contextual Info: 1. SCOPE This specification provide the ratings and the requirements for high voltage silicon diode ESJA52-12A made by FUJI ELECTRIC CO.LTD. 2. OUT VIEW Shape and dimensions are described in Fig. 3. 3. IDENTIFICATION The diode shall be marked with Cathode Mark and Lot No.

NJD6513

Abstract: NJD6514 6512 6513 6514 TRANSISTOR darlington array mp 6514 5-30V NJD6511 NJD6512
Contextual Info: NPN TRA NS IST O R ARRAY NJM6511, 6512, 6513, 6514 The seven high breakdown voltage NPN Darlington-connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers. Their internal suppression diodes insure freedom from problems associated with inductive

DIODE 914

Abstract: ESJA53-18A GDD4775
Contextual Info: 1. SCOPE This specification provide the ratings and the requirements for high voltage silicon diode ESJA53-18A nade by RJJI ELECTRIC CO.,LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. 3. IDENTIFICATION The diode shall be marked with Cathode Mark and Lot No.

Contextual Info: F eatures □ Serial |i-coded M onolithic M ulti-mode Intelligent Term inal SUMMIT with transceivers using ceramic multi-chip-module technology □ Comprehensive MIL-STD-1553 dual redundant Bus Controller (BC), Remote Terminal (RT), and Monitor Terminal (MT)

IBF20

Abstract: IC ST 201A 600PE80
Contextual Info: INTERNATIONAL RECTIFIER "4T ß F § 4 Ö S S 4 S a ODD47S4 1 Data Sheet No. PD-3.073 IN T E R N A T I O N A L I“ R R E C T I F I E R 'T'j.s''ÆO 940A RMS Hockey Puk Thyristors 600 PE SERIES Description The 60 0 P E series of converter type hockey puk thyristors use

Contextual Info: MOSEL VITELIC V53C316580500 3.3 VOL T 8 M X 8 EDO PA GE MODE CMOS DYNAMIC RAM 40 50 60 Max. RAS Access Time, tRAC 40 ns 50 ns 60 ns Max. Column Address Access Time, (tcM) 20 ns 25 ns 30 ns Min. EDO Page Mode Cycle Time, (tPC) 16 ns 20 ns 25 ns Min. Read/Write Cycle Time, (tRC)

Contextual Info: HV9114 Advanced Information High-Voltage Current-Mode PWM Controller Ordering Information +v„ Min Max Feedback Accuracy Max Duty Cycle 15V 200V ±1.5% 49% 14 Pin Plastic DIP Package Options 14 Pin 14 Pin Ceramic DIP Narrow Body SOIC HV9114P HV9114C HV9114NG

Contextual Info: MICROCHIP TECHNOLOGY INC ESE D blü3201 0DG47Ô1 4 • <3.-251 27C256 Microchip 256K 32K x 8 CMOS UV Erasable PROM FEATURES DESCRIPTION • High speed performance —150ns maximum access time. • CMOS Technoiogy for low power consumption —20mA Active current

ECG1236

Contextual Info: PHILIPS E C G INC 17 E 0 ECG Sem iconductors • bbSBTSfl Q Q Q H 7 h ? =] ■¡7^77-£ 7-o7 ECG1236 TV Sound System with FM Detector 14 13 Features 12 II 10 9 8 n n n f in n n • Electronic a tte n u a to r replaces conven­ tio n al vo lu m e control .280" 7-M)

0C314

Abstract: 09d4e 074c "04AA9H" 0496B TMS320 05c62 0144dh SPSS011B 0c314h
Contextual Info: TMS320 DSP Number 85E DESIGNER’S NOTEBOOK Speech data for German LPC Day-Time-Stamping DTS on TMS320Cxx Contributed by Gerardo Murillo Design Problem Where can I get German speech data allowing generation of a vocal output for Date and Time Stamping (DTS) and voice prompts

523A7T5

Contextual Info: FU JI 2SK2764-01R N-channel MOS-FET FAP-IIS Series 800V > Features - High Speed Switching - Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated 4 fí 4A 80W > Outline Drawing TO-3PF > Applications

Contextual Info: FU JI 2SK2766-01R N-channel MOS-FET S tlM s u ltìU K FAP-IIS Series 800V > Features - 2Q 7A 80W > Outline Drawing TO-3PF High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated

Contextual Info: @ LG Semicon. Co. LTD. Pin Configuration Description The GD74F257 is a quad 2-input multiplexer with 3-State outputs. Four bits of data from two sources can be selected using a Common Data Selected input. The four outputs present the selected data in true non-inverted form.

Contextual Info: bq2004H j^ B E N C H M A R Q Fast Charge IC Features General Description >- Fast charge and conditioning of nickel cadmium or nickel-metal hydride batteries The bq2004H Fast Charge IC provides comprehensive fast charge control functions together with high-speed

Contextual Info: Lattice G A L 1 6 L V 8 Low Voltage E2CMOS PLD Generic Array Logic I Semiconductor I Corporation FUNCTIONAL BLOCK DIAGRAM FEATURES • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 3.5 ns Maximum Propagation Delay — Fmax = 250 MHz — 2.5 ns Maximum from C lock Input to Data Output

Contextual Info: niXYS DSEP 30-04 HiPerFRED Epitaxial Diode Ì fav with soft recovery V rrM trr v” r s m V RR« V V 400 400 30 A 400 V 30 ns TO-247AD Type DSEP 3 0 - 0 4 A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Test Conditions Maximum Ratings 70 30 tbd A

po111

Contextual Info: MICRO POWER SYSTEMS INC LIE ]> • bDT7444 D004770 331 « M P S - „ 5 -1 -\<2>-\ î> MP8795 CMOS Very Low Power 10-Bit Analog-to-Digital Converter Micro Power Systems FEATURES BENEFITS • • • • • • • • • • • • • • • • • 10-Bit Resolution

transistor CD 910

Abstract: BFT11 RF2155 BATWING sop-16
Contextual Info: RF2155 MICRO »DEVICES 3V PROGRAMMABLE GAIN POWER AMPLIFIER T yp ical A p plicatio ns • Analog Communication Systems Driver Stage for Higher Power Applications • 900MHz Spread Spectrum Systems 3V Applications • 400MHz Industrial Radios Product Description

Contextual Info: 54E D SONY • 7-^-y £ - J J. CXK581OOOP/M -12LB 1 f l3 f l2 3 fl 3 □ □ □ 4 7 7 b 7 EJfl M S O N Y 2 131072-word x 8-bit High Speed CMOS Static RAM SO N V C O R P / C O M P O N E N T PRODS Description The CXK581 OOOP/M is a general purpose high speed

Contextual Info: MICRON • 4 MEG TECHNOLOur. inc . MICRON T E C H N O L O G Y INC S5E ]> ■ X bill5 ^ MT9D49 9 DRAM MODULE D D 0 4 7 4 7 b37 IMRN 4 MEG x 9 DRAM DRAM MODULE FAST PAGE MODE MT9D49 LOW POWER, EXTEDEND REFRESH (MT9D49 L) FEATURES • Industry standard pinout in a 30-pin. single-in-line

KR3600

Abstract: KR9602-STD PT 9602 KR9601-STD KR9600-PRO KR9600PRO kr9600
Contextual Info: _ 8 5 6 4 6 8 6 STANDARD STANDARD MICROSYSTEMS MICROSYSTEMS Tb De 96 D ñSbMbñb 0004755 04752 D ~ V ù , ~ / 3 'O S ' S | KR9600 KR9601 KR9602 STANDARD MICROSYSTEMS CORPORATION^ MF Keyboard Encoder Read Only Memory KEM PIN C O N FIG U R A TIO N *

2A1121

Contextual Info: LMU12 12 x 12-bit Parallel Multiplier FEATURES DESCRIPTION □ □ □ □ 20 ns Worst-Case Multiply Time Low Power CMOS Technology Replaces TRW MPY012H Two’s Complement, Unsigned, or Mixed Operands □ Three-State Outputs □ Available 100% Screened to

23C4000

Abstract: ci 0804
Contextual Info: @ LG Semicon. Co. LTD Description Pin Configuration 32 DIP/SOP The GM23C4000A high performance read only memory is organized as 524,288 words by eight bit and has an access time of 120/150ns. It is designed to be compatible with all microprocessors and similar