T588
Abstract: T588N ts88n k 036
Text: EUPEC T 588 N SEE D Typenreihe/iype range T 588 N Elektrische Eigenschaften Electrical properties 400 34032^7 0GQ07A3 <170 » U P E C 600 Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Effektiver DurchiaBstrom Dauergrenzstrom repetitive peak forward off-state
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T588N
34032T7
T588
T588N
ts88n
k 036
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Untitled
Abstract: No abstract text available
Text: EUPEC T 588 N SEE D 34032^7 0GQ07A3 <170 » U P E C Typ enreihe/iype range T 588 N Elektrische Eigenschaften Electrical properties Vdrm. Vrrm Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state and reverse voltages
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0GQ07A3
10ms0
T-91-20
5x315
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x4060
Abstract: 1N5615 1N5617 1N5619 1N5621 1N5623 Fast Silicon Rectifiers
Text: 15E 0 I R S M ELECTRO N /SEN SItR O N 7S03ti50 0GQ07Ö0 fi I *SENS/TRON SEMICONDUCTOR 221 West Industry Court • Deer Park, N Y 11729 Telephone: 516 586-7600 • Telex 96-7737 FAX 516 242 9798 JAN JANTX JANTXV TECHNICAL SPECIFICATIONS HIGH CURRENT A XIA L LEAD
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7503fcj50
1N5615
1N5617
175mm
350mm
525mm
700mm
875mm
050mm
X4060
1N5619
1N5621
1N5623
Fast Silicon Rectifiers
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Untitled
Abstract: No abstract text available
Text: * 8-BIT SCANNABLE REGISTER SYNERGY SY10E241 SY100E241 SEMICONDUCTOR FEATURES DESCRIPTION • ■ ■ ■ ■ ■ 1000ps max. CLK to output SHIFT overrides HOLD/LOAD control Asynchronous Master Reset Pin-compatible with E141 ESD protection of 2000V Fully compatible with Industry standard 10KH,
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SY10E241
SY100E241
1000ps
MC10E/100E241
TheSY10E241
andSY100E241
SY10E241JC
J28-1
SY100E241JC
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Untitled
Abstract: No abstract text available
Text: lit t le MX23C41GO 4M-BITI51 2K x 8 /2 5 B K x IB ] CMOS MASK ROM FEATURES • Switchable configuration - 512K x 8 byte mode - 256K x 16(word mode) • Single +5V power supply • Fast access time: 100/120/150/200ns • Totally static operation • • •
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MX23C41GO
4M-BITI51
8/25B
100/120/150/200ns
MX23C4100
100/120/150/200ns.
23C4100-10
MXaSC4100
MX23C4100PC-10
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Untitled
Abstract: No abstract text available
Text: bTTflSflO 0000752 7 • 27E D OPTEK TECHNOL OGY INC Product Bulletin OPL560 July 1989 Replaces August 1988 -qi-fco, 0 .Q P T E K Photologic Sensors Types QPL560, OPL561, OPL562, OPL563 Series Features • • • • • Four output options High noise immunity
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OPL560
QPL560,
OPL561,
OPL562,
OPL563
OP140
OP240
OPL560,
OPL560-00,
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Untitled
Abstract: No abstract text available
Text: GT-64011 PCI System Controller for R4640 Processors Preliminary Revision 1.2 7/2/97 Please contact Galileo Technology for possible updates before finalizing a design. FEATURES Integrated PCI system controller for high-performance embedded applications Supports all embedded 32-bit IDT MIPs bus compati
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GT-64011
R4640
32-bit
RV4640
RV4650
50MHz
512MB
256KB-16MB
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T-DQ12
Abstract: OQ10
Text: E L E C T R O N I C D E S I G N S INC 3QE D • 3230114 0000723 7 ■ ^ED I EDI8M16256C Eftcfronta Ottici« Inc* High Speed 4 Megabit SRAM Module 256Kx16 CMOS, High Speed Programmable, Static RAM Module The EDI8M 16256C is a4096K-bit high speed C M O S Static R A M Module consisting of sixteen 16 256Kx1
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3230L14
DD007S3
EDISM16256C
256Kx16
EDI8M16256C
isa4096K-bit
256Kx1
256Kx4
256Kx16,
512Kx8
T-DQ12
OQ10
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Untitled
Abstract: No abstract text available
Text: MICRO ELECTRONICS CORP 11E D bCH17 Ôa QQQQ7b ô T M L1121L INFRARED LIGHT EMISSION DEVICE • GaAlAs Si This is the new type of high power and high speed infrared light emission device Dimension: mm • This device maintains nondirectional characteristic
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bCH17
L1121L
100mA
bCH17ê
0Q0G770
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7R50
Abstract: ML302
Text: MIC RO E L E C T R O N I C S CORP 11E » b {m ?a a üOGQ7t>b s ML302 PIN PHOTODIODE OUTLINE Unit : mm ML302 is a side on type PIN photodiode with inherent visible light rejective filter epoxy encapsulation. It features high sensitivity and small junction capacitance make it possible to operate
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ML302
ML302
ML016
ML017,
T-Mh53
7R50
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varistor 594 ph
Abstract: z151 marking 130 D669 z301 800 Z151-160 RA280
Text: D 6 s 6 e M a x i Part Number Actual Part Marking r i R a t i n g s Continuous Rated Voltage AC RMS DC Volts Volts e Electrical Rated Single Pulse Transipnt Energy Peak 10/1 OOOps 8/20ps Joules Amps Varistor Voltage @1 mA DC Min Max Volts Volts s Characteristics
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8/20ps
8/20MS
D6694ZOV131RA140
D6694ZOV141
RA150
Z141-150
D6694ZOV151RA160
Z151-160
D6694ZOV181RA200
Z181-200
varistor 594 ph
z151
marking 130
D669
z301 800
RA280
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